The Engineering Projects

KSC1845 Datasheet, Pinout, Power Ratings, Equivalents & Applications

Hi Guys! I welcome you on board. In this post today, we’ll discuss the KSC1845 NPN Transistor. We will have a look at the KSC1845 Datasheet, Pinout, Power Ratings, Equivalents & Applications in detail. As it's an NPN transistor, electrons are the majority charge carriers and thus play a major role in conductivity. KSC1845 is mainly used for fast-switching and amplification purposes.

NPN transistor carries 3 terminals, known as:

• Emitter
• Collector
• Base

If the applied voltage at the base terminal exceeds 0.7V, it will forward bias this NPN transistor and the current will start to flow from Collector to Emitter. If the base voltage is less than 0.7V, KSC1845 will remain in the reverse-biased state.

I suggest you buckle up as I’ll discuss the KSC1845 NPN Transistor in detail. Let’s get started:

KSC1845 NPN Transistor

• The KSC1845 is a bipolar junction transistor that falls under the NPN transistor family.
• It is made of silicon semiconductor material and comes in a TO-92 package.
• The NPN transistors carry two junctions known as emitter-base junction and collector-base junction.
• When the emitter-base junction is forward-biased and the collector-base junction is reverse-biased, the transistor starts to conduct.
• KSC1845 Pinout, Symbol and SMD Package are shown in the below figure:
  

• We can make the emitter-base junction forward-biased, by applying a negative voltage at its Emitter and a positive voltage at its Base.
• KSC1845 contains three layers where one p-doped layer sits between two n-doped layers. The p-doped layer represents the base terminal while the other two n-doped layers represent Collector and Emitter.
• In a forward-biased state, the Emitter emits the electron into the Base while the Collector collects the electrons coming from the Base.

NPN vs PNP

KSC1845 is a Bipolar Junction Transistor, so let's quickly recall it:

• The bipolar junction transistors come in two types i.e. NPN transistors and PNP transistors. Both holes and electrons play a role in carrying out the conductivity process inside the transistor.
• In PNP transistors, holes are the majority charge carriers, while in NPN transistors, electrons are the majority charge carriers.
• Know that the mobility of electrons is better than the mobility of holes, that's why NPN transistors are preferred over PNP transistors for a range of applications.
• These bipolar(BJT) components are called current-controlled devices in opposition to MOSFETs, which are considered voltage-controlled devices and carry terminals like a drain, source, and gate.

KSC1845 Datasheet

Before you incorporate this device into your electrical project, it’s wise to go through the KSC1845 datasheet that details the main characteristics of the device. Click the link below to download the KSC1845 datasheet.

KSC1845 Pinout

The following figure shows the KSC1845 pinout.

This component contains three terminals named: 1: Emitter 2: Collector 3: Base All these terminals are used for the external connection with the electronic circuit. These terminals differ in terms of size and doping concentration. The base side is lightly doped and the emitter side is highly doped while the collector side is moderately doped. The collector side dissipates more energy because it is bigger in size compared to other terminals. The large surface area of the collector side ensures more heat dissipation.

KSC1845 Working Principle

The base side is the main region that initiates the transistor action. When voltage is applied at the base terminal, it will bias the device and as a result, current starts flowing from collector to emitter side. These bipolar devices are not symmetrical in nature. Which means if we exchange the emitter and collector sides then these terminals will stop working in forward active region and start working in reverse active mode. The different doping concentrations of these terminals ensure the lack of symmetry.

KSC1845 Power Ratings

The following table represents the KSC1845 power ratings.

Absolute Maximum Ratings of KSC1845
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	120V
2	Collector-base voltage	120V
3	Base-emitter voltage	5V
4	Collector current	0.05A
5	Power dissipation	0.5W
6	Current gain	200
7	Operating and storage junction temperature range	-55 to 150C

• When using this device, make sure these ratings don’t exceed the absolute maximum ratings else they can damage the device.
• Plus, if these ratings are applied more than the required time, they can affect the device reliability.

• The collector-current is 0.05A which shows the amount of load this device can support.
• The power dissipation is 0.5W which represents the amount of energy released during the working of this component.
• The current gain is 200 which shows the amount of current this device can amplify.
• The collector-base voltage is 120V and the collector-emitter voltage is 120V. The emitter-base voltage is 5V represents the voltage required to bias this component.

KSC1845 Equivalents

The following are the KSC1845 equivalents.

• FJV1845

Before applying alternatives into your projects, double-check the pinout of these alternatives as the pinout of KSC1845 might differ from the pinout of the equivalents.

The KSA992 is a complementary PNP transistor to the KSC1845.

KSC1845 Applications

The following are the KSC1845 applications.

• Incorporated in modern electronic circuits.
• Used in high-frequency power transform.
• Used in electronic Ballasts.
• Used in voltage regulator circuits.
• Used in a common power amplifier.

• Used in Bistable and Astable multivibrators circuit.
• Used in energy-saving lights.
• Employed to support loads under 0.05A.
• Used in the high switching power supply.

KSC1845 Physical Dimensions

The following diagram shows the KSC1845 physical dimensions.

The KSC1845 physical dimensions help you evaluate the space required for this component in the electrical project.

That’s all for today. Hope you find this article helpful. If you’re unsure or have any questions, you can pop your comment in the section below. I’m ready to help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share. They help us produce quality content based on your needs and requirements. Thank you for reading the article.

2SC1345 Datasheet, Pinout, Power Ratings, Equivalents & Applications

Hi Guys! Hope you’re well today. In today's tutorial, we will have a look at the 2SC1345 NPN Transistor. We will also discuss 2SC1345 Datasheet, Pinout, Power Ratings, Equivalents & Applications. As this is an NPN transistor, the conductivity is mainly carried out by electrons as the major charge carriers. 2SC1345 is mainly used for switching and amplification purposes.

Let's first recall NPN transistors: NPN transistor comes with 3 terminals, named:

1. Emitter
2. Collector
3. Base

If the voltage at the base terminal is above 0.7V, the NPN transistor gets forward biased & starts conducting i.e. current will flow from the Collector to Emitter terminal. If the Base voltage is less than 0.7V, it remains reverse-biased.

So now let’s get started with the 2SC1345 NPN Transistor.

2SC1345 NPN Transistor

• 2SC1345 is a bipolar junction transistor that belongs to the NPN transistor family.
• It is composed of silicon semiconductor material and comes in a TO-92 package.
• 2SC1345 contains three layers where one is a p-doped layer and the other two are n-doped layers. The p-doped layer stands between the two n-doped layers.

• This device contains three terminals named: the base, collector, and emitter. The small current change at the base side is used to produce a large output current at the remaining terminals.

• The bipolar junction transistors are available in two types i.e. NPN transistors and PNP transistors. Both holes and electrons play a role in the conductivity inside the transistors the reason they are called bipolar devices.
• However, these devices differ in terms of major charge carriers. In the case of NPN transistors, electrons are the major charge carriers and in PNP transistors holes are the major charge carriers.
• These bipolar devices are called current-controlled devices in opposed to MOSFETs that are termed voltage-controlled devices and contain terminals like a drain, source, and gate.
• It is important to note that the mobility of holes is less efficient than the mobility of electrons the reason NPN transistors are preferred over PNP transistors for a range of applications.

2SC1345 Datasheet

Before you apply this component to your electrical project, it’s wise to scan through the 2SC1345 datasheet that features the main characteristics of the device. Click the link below to download the 2SC1345 datasheet.

2SC1345 Pinout

The following figure shows the 2SC1345 pinout.

This component contains three terminals named: 1: Emitter 2: Collector 3: Base These terminals carry different doping concentrations. The base side is 10-times more doped than the collector side. The emitter side is highly doped and the collector terminal is lightly doped.

2SC1345 Working Principle

When voltage is applied at the base terminal, it will bias the device and as a result, current starts flowing from collector to emitter terminal.

• Know that, bipolar junction devices are not symmetrical in nature. This means if we exchange the emitter and collector terminals then these terminals will stop working in the forward active region and start working in reverse active mode.
• The non-symmetry of these devices is due to the different doping concentrations of all three terminals.

2SC1345 Power Ratings

The following table represents the 2SC1345 power ratings.

Absolute Maximum Ratings of 2SC1345
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	50V
2	Collector-base voltage	550V
3	Base-emitter voltage	5V
4	Collector current	0.1A
5	Power dissipation	0.2W
6	Base current	0.05A
7	Operating junction temperature range	150C

• The collector-emitter voltage is 50V and the collector-base voltage is 550V. The emitter-base voltage is 5V which is the voltage required to bias the device.
• The collector-current is 100mA which means it can support load under 100mA.

• The power dissipation is 0.2W which is equal to the amount of energy released during the functioning of this component.
• The current gain is 250 to 1200 which is the amount of current this device can amplify.
• When working with this device, make sure these ratings don’t exceed the absolute maximum ratings else they can damage the device.
• Moreover, if these ratings are applied more than the required time, they can affect the device's reliability.

2SC1345 Equivalents

The following are the 2SC1345 equivalents.

• 2SC2240
• KSC1845FTA (Fairchild)

Before incorporating these devices into your projects, double-check the pinout of these alternatives as the pinout of 2SC1345 might differ from the pinout of the equivalents.

2SC1345 Applications

The following are the 2SC1345 applications.

• Used in electronic Ballasts.
• Used in a common power amplifier.
• Used in voltage regulator circuits.
• Incorporated in modern electronic circuits.
• Used in Bistable and Astable multivibrators circuit.
• Used in energy-saving lights.

• Used in high-frequency power transform.
• Used in the high switching power supply.
• Employed to support loads under 0.1A.

2SC1345 Physical Dimensions

The following diagram shows the 2SC1345 physical dimensions. The 2SC1345 physical dimensions give you the idea to evaluate the space needed for this device to incorporate in the electrical project. That’s all for today. Hope you find this article helpful. If you have any questions, you can approach me in the section below. I’m happy and willing to help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share so we keep producing quality content based on your needs and requirements. Thank you for reading the article.

D13005K Datasheet, Pinout, Power Ratings, Equivalents & Applications

Hello Everyone! Hope you’re well today. In today's tutorial, we will have a look at D13005K NPN Transistor. We will also study D13005K Datasheet, Pinout, Power Ratings, Equivalents & Applications. As its an NPN transistor, so major charge carriers are electrons. D13005K is mainly employed for switching and amplification purpose. Let's first recall NPN transistors: NPN transistor consists of 3 terminal, named as:

• Emitter.
• Collector.
• Base.

If we provide voltage > 0.7V at base terminal, NPN transistor gets forward biased & starts conducting. If Base voltage < 0.7V, it remains reverse biased. So now let’s get started with D13005K NPN Transistor:

D13005K NPN Transistor

• D13005K is a bipolar NPN transistor, mainly used for amplification and switching purposes.
• It contains three layers where two n-doped layers surround one p-doped layer.
• This device is made of silicon semiconductor material and comes in a TO-220 package.

• D13005K contains three terminals named base, collector, and emitter. All these terminals are different in terms of doping concentrations.
• The small current at the base side is used to control the large current at the emitter and collector terminals.
• These transistors are called bipolar because both electrons and holes play role in the conductivity inside the transistor.

• Bipolar junction transistors are divided into two main types i.e. NPN and PNP transistors.
• In the case of NPN transistors, electrons are the major charge carriers while holes are major charge carriers in PNP transistors.
• The bipolar junction transistors are the current-controlled devices in contrast to MOSFETs that are voltage-controlled devices that come with terminals named: drain, source, and gate.
• The NPN transistors are preferred over PNP transistors because the mobility of electrons is better than the mobility of holes.
• While in the case of NPN transistors the current flows from the collector to emitter terminals and it flows from emitter to collector terminal in the case of PNP transistors.

D13005K Datasheet

It is wise to go through the datasheet of the device before incorporating this component into your electrical project. The datasheet comes with the main characteristics of the device. Click the link below to download the D13005K datasheet.

D13005K Pinout

• The following figure shows the D13005K pinout:

The D13005K Pinout comes with three terminals named: 1: Base 2: Collector 3: Emitter Recall, all these terminals are different in terms of doping concentrations. The emitter side is highly doped and the collector side is lightly doped. The collector side is 10-times lightly doped than the base side. These terminals are used for the connection with the external circuits.

D13005K Working Principle

The working of this device starts from the base side. When voltage is applied at the base side, it will bias the device and as a result, current starts flowing from collector to emitter terminal. This bipolar device is not symmetrical in nature. And the different doping concentration of all three terminals is the reason these devices are not symmetrical. Which means if you exchange both emitter and collector terminals then these terminals will start operating in reverse active mode and it prevents these terminals to work in forward active mode.

D13005K Power Ratings

The following table shows the D13005K power ratings.

Absolute Maximum Ratings of D13005K
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	4A
5	Power dissipation	75W
6	Base current	2A
7	Operating and storage junction temperature range	-55 to 150C

• The junction temperature of this device is 150C and the storage temperature ranges from -55 to 150C.
• The collector current is 4A which means this device can support load up to 4A.
• The power dissipation is 75W which is the amount of energy this device releases during the working of this component.

• Know that, don’t apply these ratings more than the required time, else they can affect device reliability.
• The collector-emitter current is 400V and the collector-base voltage is 700V. And the emitter-base voltage is 9V which means this device will get biased when 9V is applied across the base and emitter terminals.

D13005K Applications

The following are the D13005K applications.

• Used in voltage regulator circuits.
• Used in electronic Ballasts.
• Used in a common power amplifier.
• Used in the high switching power supply.
• Incorporated in modern electronic circuits.
• Employed to support loads under 4A.
• Used in high-frequency power transform.

• Used in Bistable and Astable multivibrators circuit.
• Used in energy-saving lights.

D13005K Physical Dimensions

The following diagram represents the D13005K physical dimensions. By checking those dimensions you can audit the space required for your component in the electrical project. That was all about the Introduction to D13005K. Feel free to share your thoughts around the content we share so we keep producing quality content customized to your exact needs and requirements. You can approach me in the section below if you need any assistance regarding this article. I’m happy and willing to help you the best way I can. Thank you for clicking this read.

D13003K Datasheet, Pinout, Power Ratings & Applications

Hi Friends! I welcome you on board. Thank you for clicking this read. In this post today, I’ll document the Introduction to D13003K. The D13003K is an NPN silicon transistor mainly employed for switching and amplification purposes. It comes with a power dissipation of around 50W which demonstrates the amount of energy this device releases during the functioning of this device. As this is an NPN transistor as here electrons are the major charge carriers. The collector current is 1.8A which means it can support load under 1.8A. The emitter-base voltage is 9V which means it needs 9V to bias this device and start the transistor action. I suggest you read this post all the way through as I’ll walk you through the complete Introduction to D13003K covering pinout, datasheet, power ratings, working principle, applications, and physical dimensions. Let’s get started.

Introduction to D13003K

• The D13003K is a power transistor made of silicon material and falls under the category of NPN transistors.
• This device is composed of three layers where one is a p-doped layer that stands between the two n-doped layers.

• This component comes with three terminals known as collector, emitter, and base. All these terminals are different in terms of doping concentrations.
• The power dissipation of this device is 80W which is the amount of power released during the working of this device.

• The D13003K belongs to bipolar junction transistors where electrons are the major carriers. The bipolar junction transistors are divided into two main types NPN transistors and PNP transistors. In NPN transistors electrons are the major carriers while in the case of PNP transistors holes are the major carriers. They are called bipolar junction transistors because both electrons and holes are responsible for the conductivity inside the transistor.
• These bipolar junction transistors are current-controlled devices because a small current at the base terminal is employed to control large output current at the remaining terminals.
• The MOSFETs, on the other hand, are voltage-controlled devices that come with terminals named drain, source, and gate.
• The mobility of electrons is better than the mobility of holes the reason NPN transistors are preferred over PNP transistors for a range of applications.

D13003K Datasheet

Before you embed this device into your electrical project, it is better to scan through the datasheet of D13003K. The datasheet features the main characteristics of the device. Click the link below to download the datasheet of D13003K:

D13003K Pinout

The following figure represents the pinout diagram of D13003K. This NPN transistor contains three terminals known as: 1: Base 2: Collector 3: Emitter All these terminals come with different doping concentrations. The collector terminal is lightly doped while the doping concentration of the emitter terminal is high. The base side is 10-times more doped than the collector side.

D13003K Working Principle

• The base pin plays a vital role to start the transistor action. When voltage is applied at the base pin, it will bias the device, and as a result, the current will start flowing from the collector to the emitter terminal.
• As this is an NPN transistor here current flows from collector to emitter terminal and in the case of PNP transistor current flows from emitter to collector terminal.

• These bipolar junction devices are not symmetrical in nature. And the different doping concentration of all three terminals is responsible for the lack of symmetry of this device.

• This means if we try to exchange emitter and collector terminals then the device will start working in reverse active mode, and stop working in forward active mode.

D13003K Power Ratings

The following table features the absolute maximum ratings of D13003K.

Absolute Maximum Ratings of D13003K
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	1.8A
5	Power dissipation	50W
6	Base current	0.9A
7	Operating and storage junction temperature range	-55 to 150C

• While embedding this chip into your project, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, it will put your entire project at stake.
• The junction temperature and storage temperature ranges from -55 to 150C.
• It is important to note that, don’t apply these ratings more than the required time, else they can affect device reliability.
• The collector-emitter 400 and collector-base voltage is 700. And total power dissipation is 50W which demonstrates that this device will release 50W energy during the working of this device.

D13003K Applications

D13003K is used in the following applications.

• Used in a common power amplifier.
• Used in voltage regulator circuits.
• Used in electronic Ballasts.
• Used in Bistable and Astable multivibrators circuit.
• Incorporated in modern electronic circuits.

• Used in the high switching power supply.
• Used in high-frequency power transform.
• Employed to support loads under 1.8A.
• Used in energy-saving lights.

D13003K Physical Dimensions

The image below represents the physical dimensions of D13003K. By reading those dimensions you can evaluate the space required for your component in the electrical project. That’s all for today. Hope you find this article helpful. If you have any questions, you can pop your comment in the section below. I’m willing to help you the best way I can. You’re most welcome to share your valuable feedback and suggestions around the content we share so we keep coming up with quality content customized to your exact needs and requirements. Thank you for reading the article.

D13007K NPN Transistor Datasheet, Pinout, Power Ratings & Applications

Hello Fellas! Hope you’re well today. Happy to see you around. In this post today, I’ll walk you through the Introduction to D13007K. The D13007K is an NPN power transistor mainly used for switching and amplification purpose. This device is made of silicon material and falls under the category of bipolar junction transistors. As this is an NPN transistor so here major charge carriers are electrons. Holes are major carriers in the case of PNP transistors. This is a high voltage high current capability device used in energy-saving lamps. The collector current of this chip is 8A which means it is best for loads under 8A. And the power dissipation is 80W which projects it is eligible to release 80W power during the operation of this device. The collector-base voltage is 700V and collector-emitter voltage is 400 while the voltage across the base and emitter terminals is 9V which is the voltage needed to start the transistor action and bias the device. Read this entire post till the end as I’ll document the complete Introduction to D13007K covering datasheet, pinout, power ratings, working principle, applications, and physical dimensions. Let’s dive in.

Introduction to D13007K

• The D13007K is a power transistor that belongs to the NPN transistor family.
• The three terminals like emitter, base, and collector make this entire device. All these terminals are connected to the external electrical circuit.
• This is a current-controlled device because the small current at one terminal is employed to handle large current at the remaining terminals.

• While MOSFETs are voltage-controlled devices and come with terminals like a drain, source, and gate. The gate plays the same role in MOSFETs as what base plays in bipolar junction transistors.
• The bipolar junction transistors are mainly divided into two types one is PNP transistors and one is NPN transistors.

• Both electrons and holes play a key role in the conductivity of bipolar junction transistors.
• But in the case of PNP transistors holes are responsible for the major part of conductivity carried out inside the device while in the case of NPN transistors electrons play a key role in the overall conductivity inside the transistor.
• PNP transistors are considered less efficient than NPN transistors because electrons are quicker and efficient in the conductivity process compared to holes. The mobility of electrons is far better and quicker than the mobility of holes inside the transistor.

D13007K Datasheet

It is wise to check out the datasheet of the device before incorporating it into your electrical project. The datasheet comes with the main characteristics of the device. Click the link below to download the datasheet of D13007K.

D13007K Pinout

The following figure shows the pinout diagram of D13007K. The D13007K carries three terminals known as: 1: Base 2: Collector 3: Emitter All these terminals carry different doping concentrations. Which leads to the lack of symmetry of this device. The emitter side is highly doped and the collector side is lightly doped. While the collector side is 10-times less doped than the base side.

D13007K Working Principle

• The transistor working principle is straightforward and simple. It all initiates from the base side. When voltage is applied at the base side, it will bias the device, and as a result, the current will start flowing collector to the emitter terminal.
• As this is an NPN transistor so here current flow is carried out from the collector to emitter terminals this is the opposite in the case of PNP transistors.

• When voltage is applied at the base pin in PNP transitory, the current starts flowing from the emitter to the collector terminal.

• As described earlier this bipolar device is not symmetrical. Which means if you interchange both emitter and collector side then both terminals will start working in reverse active mode and the device will stop working in forward active mode.

D13007K Power Ratings

The following table features the absolute maximum ratings of D13007K.

Absolute Maximum Ratings of D13007K
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	8A
5	Power dissipation	80W
6	Base current	4A
7	Operating and storage junction temperature range	-55 to 150C

• While incorporating this device into your project, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, it can damage the entire project.
• The junction temperature and storage temperature ranges from -55 to 150C.
• The collector-emitter and collector-base voltages are 400V and 700 respectively. And total power dissipation is 80W which demonstrates the amount of power released during the functioning of this device.
• It is important to note that, don’t apply these ratings more than the required time, else they can affect device reliability.

D13007K Applications

D13007K is used in the following applications.

• Used in Bistable and Astable multivibrators circuit.
• Used in voltage regulator circuits.
• Employed to support loads under 12A.
• Used in electronic Ballasts.

• Incorporated in modern electronic circuits.
• Used in high-frequency power transform.
• Used in a common power amplifier.
• Used in energy-saving lights.
• Used in the high switching power supply.

D13007K Physical Dimensions

The image below represents the physical dimensions of D13007K. By scanning those dimensions you can evaluate the space required for your component in the electrical project. That’s all for today. Thank you for clicking this read and reading it. You are most welcome to share your valuable feedback and suggestions in the section below. They help us produce quality content. You can approach me in the section below if you need any help regarding this article, I’m happy and ready to help you the best way I can. Thank you for reading this post.

MJE13009 NPN Transistor Datasheet, Pinout, Features & Applications

Hi Guys! I welcome you on board. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to MJE13009. MJE13009 is a semiconductor device made of silicon material that falls under the category of NPN transistors. This device is mainly used for switching and amplification purposes. The power dissipation of this device is 100W and the emitter-base voltage is 9V which is the amount of voltage needed to bias the device. I suggest you read this post all the way through as I’ll describe the complete Introduction to MJE13009 covering datasheet, pinout, features, and applications. Let’s get started.

Introduction to MJE13009

• MJE13009 is an NPN transistor mainly used for amplification and switching purposes.
• This is a semiconductor device made of silicon material and comes in a TO-220 package.
• MJE13009 is a three-layer device where two n-doped layers surround the one p-doped layer.
• This integrated chip contains three terminals named emitter, base, and collector.

• The small input current at the base pin is used to control the large output current at the remaining two terminals.
• MJE13009 is a type of bipolar junction transistor that belongs to the NPN transistor family where electrons are the major charge carriers.
• In a bipolar junction transistor, both electrons and holes play a key role in the conductivity inside the transistor. However, in the case of NPN transistors, electrons are major charge carriers while in the case of PNP transistor conductivity is carried out by the holes as major charge carriers.
• In NPN transistors current flows from the collector to emitter terminal while in the case of PNP transistor current flows from emitter to collector terminal.

• The NPN devices are preferred over PNP devices for a range of switching applications because the mobility of electrons is better than the mobility of holes.
• The bipolar junction transistors are current-controlled devices in contrast to MOSFETs that are voltage controlled devices and contain terminals drain, source, and gate. The gate terminal plays the same role in MOSFET what the base terminal plays a role in bipolar junction transistors.
• The collector-emitter voltage of this device is 400V and the collector-base voltage is 700V while the emitter-base voltage is 9V which is the amount of voltage that can bias the device and start transistor action.
• MJE13009 is mainly developed for high-power high-speed switching applications. And the collector current of this device is 12A which means it can support load up to 12A.

MJE13009 Datasheet

Before you incorporate this device into your electrical project, it’s wise to go through the datasheet of the component that features the main characteristics of the device. Click the link below to download the datasheet of MJE13009.

MJE13009 Pinout

The MJE13009 carries three terminals known as:

1. Base
2. Collector
3. Emitter

All these terminals are used for external connection with the electrical circuit. The following figure shows the pinout diagram of MJE13009. The terminals carry different doping concentrations. The collector pin is a lightly doped terminal while the emitter terminal is a highly doped pin compared to other terminals. Similarly, the base pin is 10-times more doped than the collector terminal.

MJE13009 Working Principle

• The base pin is responsible for the overall transistor action. When voltage is applied at the base pin, it helps in biasing the device and current will start flowing from collector to emitter terminal.

• The different doping concentration of all these terminals is responsible for the lack of symmetry inside transistor device.

• Yes, bipolar junction transistors are not symmetrical which means if you interchange both collector and emitter terminals, it will force the terminals to stop acting in forward active mode and as a result, both terminals will start operating in reverse action mode.
• This exchanging of terminals can influence the value of both common-emitter current gain and common-base current gain.

MJE13009 Power Ratings

The following table shows the absolute maximum ratings of MJE13009.

Absolute Maximum Ratings of MJE13009
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	12A
5	Power dissipation	100W
6	Base current	6A
7	Operating and storage junction temperature range	-55 to 150C

• The junction temperature and storage temperature ranges from -55 to 150C.
• The collector-emitter and collector-base voltages are 400V and 700V respectively. And total power dissipation is 100W which is the amount of power released during the working of this device. When you’re working with this integrated circuit, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, you’ll be risking your entire project.
• Moreover, don’t apply these ratings more than the required time, else they can affect device reliability.

MJE13009 Applications

MJE13009 is used in the following applications.

• Used to support loads under 12A.
• Installed in the motor control circuit.
• Employed in Bistable and Astable multivibrators circuit.

• Employed for switching and amplification purpose.
• Used in voltage regulator circuits.
• Employed in the switched-mode power supply.
• Used in H-bridge circuits.
• Used in modern electronic circuits.

MJE13009 Physical dimensions

The following figure represents the physical dimensions of the IC MJE13009. By looking at the physical dimensions of this component you can evaluate the space required for your circuit and install the device accordingly. That’s all for today. Hope you find this article helpful. If you have any questions you can pop your comment in the section below. I’m willing and happy to assist you the best way I can. Feel free to share your feedback and suggestions around the content we share so we keep producing quality content customized to your exact needs and requirements. Thank you for reading this article.

MJE13003 NPN Transistor Datasheet, Pinout, Features & Applications

Hi Friends! Hope you’re well today. I welcome you on board. In this post today, I’ll demonstrate the Introduction to MJE13003. MJE13003 is an NPN silicon transistor mainly used for high-speed high voltage power switching applications. This chip is a three-terminal device where a small current at one terminal is used to produce a large current at the remaining terminals. The collector current is 1.5A which projects this device can support load up to 1.5A. I suggest you buckle up as I’ll describe the complete Introduction to MJE13003 covering datasheet, pinout, working principle, applications, power ratings, and physical dimensions. Let’s get started.

Introduction to MJE13003

• MJE13003 is a bipolar junction transistor that belongs to the NPN transistor family. It is mainly used for switching and amplification purposes and comes in the TO-220 package.
• The power dissipation of this device is 40W which is the amount of power released during the working of this device.

• MJE13003 is a power transistor that comes with three terminals known as emitter, base, and collector. The small input current at the base pin is used to induce a large output current at the emitter and collector terminals.
• Bipolar junction transistors are the type of transistors where two charge carriers i.e. holes and electrons, play a vital role in the conductivity of the device.
• Bipolar junction transistors are divided into two types where one is an NPN transistor and the other is a PNP transistor.
• In NPN transistors, both electrons and holes are responsible for the conductivity of the device, however, electrons are major charge carriers in this case while holes are minority carriers.
• Similarly, both electrons and holes play a vital role in the conductivity of PNP transistors but here holes are majority carriers and electrons are minority carriers.

• Moreover, current flows from emitter to collector terminal in PNP transistors while in the case of NPN transistors current flows in opposite direction i.e. from collector to emitter terminals.
• When comparing NPN transistors with PNP transistors, the NPN transistors are preferred over PNP transistors because electrons can flow faster than holes, making PNP devices more valuable for a range of applications.
• These bipolar junction transistors are current-controlled devices while MOSFETs are the type of transistors that are voltage-controlled devices and carry terminals named drain, source, and gate.

MJE13003 Datasheet

It is wise to scan through the datasheet of the component before you incorporate this device into your electrical project. The datasheet features the main characteristics of the device. You can download the datasheet of MJE13003 by clicking the link below.

MJE13003 Pinout

MJE13003 is a power transistor that comes with three terminals named:

1. Base
2. Collector
3. Emitter

The following figure shows the pinout diagram of MJE13003.

• The external electrical circuit is connected with this transistor through these terminals. All these terminals come with different doping concentrations.
• The emitter pin is highly doped while the collector pin is lightly doped. And the base terminal is 10-times more doped than the collector pin.

• And large current at the emitter and collector terminals is produced by using the small current at the base terminal.

MJE13003 Working Principle

• The base pin is the location responsible for the entire transistor action. When you apply a voltage at the base pin, it will bias the device and as a result, the current will start flowing from collector to emitter terminal.
• As this is an NPN transistor so here electrons are the major carriers and holes are minority carriers.

• Know that bipolar junction transistors are not symmetrical devices. Which projects if you interchange the emitter and collector terminal, it will prevent the terminals to work in forward active mode, and thus both terminals will start working in reverse active mode.
• Exchanging these terminals will also influence the values of common-base current gain and common-emitter current gain.

MJE13003 Absolute Maximum Ratings

The following table shows the absolute maximum ratings of MJE13003.

Absolute Maximum Ratings of MJE13003
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	1.5A
5	Power dissipation	40W
6	Base current	0.75A
7	Operating and storage junction temperature range	-55 to 150C

• The total power dissipation of this device is 40W which is the amount of power released during the functioning of this device.
• While collector-base voltage is 700V and collector-emitter voltage is 400V. The emitter-base voltage is 9V which shows the amount of voltage required to bias this device.
• When you’re working with the component, make sure the ratings don’t surpass the absolute maximum ratings. Otherwise, they can badly damage the device, thus the entire project.
• Also, don’t apply these ratings more than the required time, else they can affect device reliability.

MJE13003 Applications

MJE13003 is employed in the following applications.

• Used in modern electronic circuits.
• Used in the switched-mode power supply.
• Used in voltage regulator circuits.

• Used for switching and amplification purpose.
• Used in Bistable and Astable multivibrators circuit.
• Used to support loads under 1.5A.
• Used in H-bridge circuits.
• Used in the motor control circuit.

MJE13003 Physical Dimensions

The following figure shows the physical dimensions of MJE13003. Using these dimensions you can evaluate the space required to install this device into the electrical circuit. That was all about the Introduction to MJE13003. Hope you’ve enjoyed reading this article. If you have any questions, you can approach me in the comment section below. I’m willing and happy to help you the best way I can. You are most welcome to share your feedback and suggestions around the content we share. They help us produce quality content tailored to your exact needs and requirements. Thank you for reading the article.

D13009K NPN Transistor Datasheet, Pinout, Power Ratings & Applications

Hello Folks! I welcome you on board. Happy to see you around. In this post today, I’ll walk you through the Introduction to D13009K. D13009K is a high voltage fast switching power transistor that falls under the category of NPN transistors. The collector current of this device is 12A which projects it can endure load under 12A. This chip is mainly used in amplification and switching applications. The small current change at one pair of terminals is used to produce a large current change across the remaining terminals. The power dissipation is 100W which features the amount of power this chip dissipates during the working of this integrated chip. I recommend you check out this post all the way through as I’ll demonstrate the complete Introduction to D13009K covering datasheet, pinout, power ratings, applications, and physical dimensions. Let’s get started.

Introduction to D13009K

• D13009K is an NPN bipolar junction transistor that is a high voltage fast switching power device. It is widely employed for switching and amplification purposes.
• This component contains three terminals named base, collector, and emitter. It generates a large current across emitter and collector terminals by changing a small current at the base side. This phenomenon is used for amplification purposes.

• The emitter-base voltage is 9V which details that it requires 9V to start the transistor action and bias this device.
• D13009K contains three layers. Two are n-doped layers and one is a p-doped layer. The p-doped layer sits between the two n-doped layers.

• Bipolar junction transistors are divided into two main types i.e. PNP transistors and NPN transistors.
• The D13009K is an NPN transistor where electrons are the major charge carriers. It is important to note that these devices are called bipolar devices because both holes and electrons are responsible for the conductivity inside the transistor.
• In NPN devices, electrons are the major charge carriers and in PNP devices, holes are the major carriers. Moreover, NPN transistors are preferred over PNP transistors since the mobility of electrons is faster and efficient than the mobility of holes.
• This bipolar junction transistor is a current-controlled device as opposed to MOSFETs that are voltage-controlled devices and carry pins like a drain, source, and gate. The drain side replaces the emitter, the source replaces the collector and the gate replaces the base pin in bipolar junction transistors.

D13009K Datasheet

Before you embed this chip into your electrical project, it’s wise to check out the datasheet of the device that features the main characteristics of the device. Download the datasheet of D13009K by clicking the link below.

D13009K Pinout

This power transistor contains three terminals named:

1. Base
2. Collector
3. Emitter

The following figure shows the pinout diagram of D13009K. The doping concentration of all these terminals is different. The collector pin is lightly doped while the emitter pin is highly doped. The base pin is 10-times more doped than the collector side.

D13009K Working Principle

• This device comes with high breakdown voltage and carries high current capability. It is a highly reliable product and features a high switching speed.
• The working of this device starts from the base pin. When you apply voltage at the base terminals, it will bias the device and start the transistor action. And current starts flowing from collector to emitter terminal.
• In NPN transistors current flows from collector to emitter terminal and in PNP transistors current flows from emitter to collector terminal.

• These bipolar devices are not symmetrical. This means if you try to exchange the collector and emitter side, it will prevent the terminals to work in forward active mode and force the terminals to work in reverse active mode.

• The different doping concentration of these devices is responsible for the lack of symmetry in these transistors.

D13009K Power Ratings

The following table features the absolute maximum ratings of D13009K.

Absolute Maximum Ratings of D13009K
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	12A
5	Power dissipation	100W
6	Base current	6A
7	Operating and storage junction temperature range	-55 to 150C

• When you’re working with the component, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, it can affect the entire project.
• The collector-emitter and collector-base voltages are 400V and 700 respectively. And total power dissipation is 100W which shows the amount of power released during the working of this chip. The junction temperature and storage temperature ranges from -55 to 150C.
• Plus, don’t apply these ratings more than the required time, else they can affect device reliability.

D13009K Applications

D13009K is used in the following applications.

• Used in energy-saving lights.
• Used in Bistable and Astable multivibrators circuit.
• Used in high-frequency power transform.
• Employed to support loads under 12A.
• Used in voltage regulator circuits.
• Used in a common power amplifier.

• Incorporated in modern electronic circuits.
• Used in electronic Ballasts.
• Used in the high switching power supply.

D13009K Physical Dimensions

The image below shows the physical dimensions of D13009K. By reading those dimensions you can evaluate the space required for your component in the electrical project. That’s all for today. Thank you for reading this entire post. You are most welcome to share your valuable feedback and suggestions around the content we share so we keep producing quality content based on your exact needs and requirements. You can approach me in the section below if you need any help regarding this article, I’m happy and willing to help you the best way I can. Thank you for reading this article.

MJE13007 NPN Transistor Datasheet, Pinout, Features & Applications

Hello Everyone! Happy to see you around. Thank you for clicking this read. In this post today, I’ll document the Introduction to MJE13007. MJE13007 is an NPN bipolar junction transistor that is a semiconductor device made of silicon material. This chip is mainly used for amplification and switching purposes. The collector-base voltage is 700V while the collector-emitter voltage is 400V. The power dissipation at temp 25C is 80W. This means 80W is released during the working of this device. This device can support load up to 8A because the current at the collector side is 8A. I suggest you read this entire post till the end as I’ll include the complete Introduction to MJE13007 covering datasheet, pinout, working principle, power ratings, applications, and physical dimensions. Let’s get started.

Introduction to MJE13007

• MJE13007 is an NPN bipolar junction transistor mainly used for high voltage high-speed switching applications.
• Three layers are used for the construction of this device. One is a p-doped layer that stands between two n-doped layers.
• MJE13007 includes three terminals named base, collector, and emitter. The small input current at the base side is used to generate a large output current across the emitter and collector terminals.

• The emitter-base voltage is 9V which means this device requires 9V to initiate the transistor action.
• Bipolar junction transistors come in two types i.e. NPN transistors and PNP transistors. This device MJE13007 falls under the category of NPN transistors where electrons are the major carriers while in the case of PNP transistors holes are the major carriers.
• It is important to note that in bipolar junction transistors both electrons and holes are involved in the conductivity inside the transistors but holes are majority carriers in PNP transistors while electrons are major carriers in NPN transistors.
• The mobility of holes is less efficient than the mobility of electrons, making NPN transistors a better choice for the range of applications.
• Moreover, the current flows from emitter to collector in PNP transistors while it flows from collector to emitter in NPN transistors.
• Transistors are mainly divided into two main types’ i.e. bipolar junction transistors and MOSFETs. The bipolar junction transistor are the current-controlled device while MOSFETs are the voltage-controlled devices that include terminals known as a drain, source, and gate.

MJE13007 Datasheet

Before you apply this device to your electrical project, it is wise to scan through the datasheet of the device that details the main characteristics of the device. Click the link below to download the datasheet of MJE13007.

MJE13007 Pinout

The MJE13007 includes three terminals named:

1. Base
2. Collector
3. Emitter

The following image represents the pinout diagram of MJE13007. The small current at the base side is used to control the large current at the remaining terminals. All these terminals are used for the external connection with the electronic circuit. While the collector side is lightly doped. The base side is 10-times more doped than the collector side.

MJE13007 Working Principle

• The base side is responsible for the overall transistor action. When voltage is applied at the base pin, it gets biased, and current will start flowing from the collector to the emitter terminal.

• This device MJE13007 is not a symmetrical device. The lack of symmetry is due to the difference in the doping concentration of all three terminals.

• If you try to exchange the emitter and collector terminals, it will prevent the device from working in forward active mode and as a result, both terminals will start working in reverse active mode, influencing the values of both common-emitter current gain and common-base current gain.

MJE13007 Power Ratings The following table shows the absolute maximum ratings of MJE13007.

Absolute Maximum Ratings of MJE13007
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	8A
5	Power dissipation	80W
6	Base current	4A
7	Operating and storage junction temperature range	-55 to 150C

• The power dissipation is 80W which is the amount of power that will dissipate during the working of this device. The collector-base voltage is 700V and the collector-emitter voltage is 400V.
• The emitter-base voltage is 9V which is the amount of voltage that you will apply to bias the device and start the transistor action.
• When you’re working with this chip, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, they can severely damage the device, thus the entire project.
• Moreover, don’t apply these ratings more than the desired time, else they can affect device reliability.

MJE13007 Applications

The following are the main applications of the MJE13007 NPN transistor.

• Incorporated in modern electronic circuits.
• Employed in the switched-mode power supply.
• Employed to support loads under 8A.
• Installed in the motor control circuit.

• Used in voltage regulator circuits.
• Used for switching and amplification purpose.
• Used in H-bridge circuits.
• Used in Bistable and Astable multivibrators circuit.

MJE13007 Physical Dimensions

The following figure presents the physical dimensions of MJE13007. By reading the physical dimensions you can get a hold of the space required to install this device into the relevant project. That’s all for today. Hope you find this article helpful. You are most welcome to share your feedback and suggestions around the content we share so we keep coming back with quality content tailored to your exact needs and requirements. You can approach me in the section below, for any query regarding this article. I’m happy and willing to help you the best way I can. Thank you for reading the article.

MJE13005 NPN Transistor Datasheet, Pinout, Features & Applications

Hi Guys! I welcome you on board. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to MJE13005. The MJE13005 is a high speed and high voltage power transistor that belongs to the NPN transistor family. This device can support load up to 4A and the emitter-base voltage is 9V which is the voltage required to bias the device and start the transistor action. I suggest you read this post all the way through as I’ll detail the complete Introduction to MJE13005 covering datasheet, pinout, features, and applications. Let’s get started.

Introduction to MJE13005

• The MJE13005 is an NPN transistor which is a high speed and high power device used for amplification and switching purposes.
• This component is made of three-layers where one is p-doped layers and the other two are n-doped layers. The p-doped layer stands between these two n-doped layers.
• The MJE13005 is a semiconductor device made of silicon material. It contains three terminals known as emitter, base, and collector and is termed as a current-controlled device as opposed to MOSFETs which are voltage-controlled devices and contain terminals source, drain, and gate.

• All these terminals carry different doping concentrations. The doping concentration of the collector pin is light and the doping concentration of the emitter pin is high compared to the other two terminals. The base pin is 10-times more doped than the collector pin. Moreover, the emitter side carries the entire current of the device since the emitter current is the sum of both collector current and base current.
• The bipolar junction transistors are mainly categorized into two types i.e. NPN transistors and PNP transistors.
• Both electrons and holes play a vital role in conductivity in both these transistors. But in the case of NPN transistors holes are the majority carriers and in the case of PNP transistors holes are majority carriers.
• The NPN transistors are preferred over PNP transistors for a range of applications because the mobility of electrons is better than the mobility of holes.
• NPN devices are sometimes known as “sinking devices” since they sink ground to the output. PNP devices are sometimes named “sourcing devices” since they source positive power to the output.
• The DC current gain of this device ranges from 8 to 40 which is the amount of current this device can amplify.

MJE13005 Datasheet

Before you embed this device into your electrical project, it’s wise to scan through the datasheet of this component that features the main characteristics of the device. Click the link below to download the datasheet of MJE13005.

MJE13005 Pinout

The following figure shows the pinout diagram of MJE13005. This device contains three terminals named:

1. Base
2. Collector
3. Emitter

The small current at the base side is used to produce a large current across two terminals. This device carries two junctions i.e. base-collector junction which is reverse biased and base-emitter junction which is forward biased.

MJE13005 Working Principle

• The working of this device starts from the base pin. When voltage is applied at the base pin, it results in biasing the device, and current starts flowing from collector to emitter terminal.

• Know that these bipolar junction transistors are not symmetrical devices. This means if we exchange both emitter and collector terminal, it prevents both these terminals to work in forward active mode and as a result, both these terminals will start working in reverse active mode. Doing this will affect the values of common-emitter current gain and common-base current gain.

• This lack of symmetry comes from the different doing concentrations of all three terminals.
• The Common-emitter current gain of this device ranges from 8-40 in this device, which is denoted by beta and the common-base current gain is denoted by alpha and is always less than one.

MJE13005 Equivalent

The following are the alternative to MJE13005:

• KSE13007
• MJE13007
• 2SC3795

It’s better the check out the pinout of alternatives before applying them to your electrical project as the pinout of the alternatives might differ from the pinout of MJE13005.

MJE13005 Power Ratings

The following table shows the absolute maximum ratings of MJE13005.

Absolute Maximum Ratings of MJE13005
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	4A
5	Power dissipation	70W
6	Base current	2A
7	Operating and storage junction temperature range	-55 to 150C

The collector-emitter is 400V and the collector-base voltage is 700V. And total power dissipation is 70W which indicates the power released during the working of this device. The junction temperature and storage temperature ranges from -55 to 150C. Know that, don’t apply these ratings more than the required time, else they can affect device reliability. When you’re working with the component, make sure the ratings don’t increase from the absolute maximum ratings. Otherwise, they can badly damage the device, putting your entire project at risk.

MJE13005 Applications

MJE13005 is embedded in the following applications.

• Used in voltage regulator circuits.
• Used in H-bridge circuits.
• Incorporated in modern electronic circuits.

• Used in Bistable and Astable multivibrators circuit.
• Employed to support loads under 4A.
• Used for switching and amplification purpose.
• Installed in the motor control circuit.
• Employed in the switched-mode power supply.

MJE13005 Physical dimensions

The following figure represents the physical dimensions of the MJE13005 device. By checking out the physical dimensions of this component you can predict the space required for your circuit and install the device accordingly. That was all about the Introduction to MJE13005. If you have any questions, you can pop your comments in the section below, I’m ready and happy to assist you the best way I can. Feel free to share your valuable suggestions and feedback around the content we share so we keep generating quality content customized to your exact needs and requirements. Thank you for reading the post.