The Engineering Projects

7 Best Arduino Starter Kits for Beginners

Hi Guys! Hope you’re well today. I welcome you on board. In this post today, I’ll detail the 7 best Arduino starter kits for beginners.

Arduino boards are particularly introduced for people with little to no knowledge about programming and electronics. These boards are the improvised version of microcontrollers. If you’re a student or someone planning to get your hands dirty with some electronic projects, Arduino boards are a great way to whet your appetite. Arduino kits house many essential components required to start working with Arduino boards. These kits are developed for people who struggle to get a hold of the nitty-gritty of programming Arduino boards. These Arduino basic kits come with instruction manuals that detail the step-by-step process to make the Arduino projects with the given components. I suggest you read this post all the way through as I’ll walk you through the starter kits to make a range of Arduino starter kit projects. Let’s get started.

7 Best Arduino Starter Kits for Beginners

The following are the 7 Best Arduino starter kits for beginners.

1. Official Arduino Starter Kit

The official Arduino starter kit tops the list. The kit comes with a range of components to start working with Arduino boards. It also includes a 170-page book that details 15 electronic projects that you can develop using the components available in the starter kit. Besides English, this book is available in many other languages including French, German, Chinese, Korean, Spanish, and Italian. This book includes codes and step-by-step tutorials to make electronic projects with the components provided. The official Arduino Start Kit comes with the following components:

• Arduino Projects Book
• USB cable
• Breadboard 400 Pins
• Arduino UNO R3
• 9V battery snap
• Easy-to-assemble wooden base
• Solid core jumper wires (70)
• Phototransistors (6)
• Pushbuttons (10)
• Stranded jumper wire (1)
• 10KO Potentiometers (6)
• Tilt sensor
• Piezo capsule
• Temperature sensor TMP36
• Small DC motor (6/9V)
• Easy-to-assemble wooden base
• MOSFET Transistors IRF520 (2)
• LEDs (1 x Bright White, 1 x RGB, 8 x Red, 8 x Green, 8 x Yellow and 3 x Blue)
• Small servo motor
• H-bridge motor driver L293D
• Capacitors (5 x 100nF, 3 x 100µF, 5 x 100pF)
• Transparent gels (red, green, blue)
• Diodes 1N4007 (5)
• 40 pin male header strip
• Optocouplers 4N35 (2)
• Resistors (20 x 220O, 5 x 560O, 5 x 1KO, 5 x 4.7O, 10 x 10KO, 5 x 1MO, 5 x 10MO)

All these components are packaged in a single box. Using these components you can make the following 15 projects. The book includes step-by-step tutorials to make these projects.

• Color Mixing Lamp
• Spaceship Interface Design
• Touchy-Feel Lamp
• Digital Hourglass
• Hacking Buttons
• Motorized Pinwheel
• Mood Cue
• Keyboard Instrument
• Crystal Ball
• Zoetrope
• Light Theremin
• Love-O-Meter
• Knock Lock
• Tweak the Arduino Logo

All components included in the package are high quality and ensure the remarkable performance of the kit. This kit contains 2KB RAM for storing the information. You’ll get a lot of high-quality components the reason this kit is more expensive than other kits available on the list. Moreover, this kit doesn’t include the software, which you need to install from the Arduino official website. So, if you want basic components in the kit and money is no problem for you, this gorgeous kit resonates with your needs and requirements.

2. Kuman for Arduino Project Complete Starter Kit

Kuman Arduino starter kit is another valuable beast on the list. You’ll get the eBook along with this starter kit that comes with 44 components from which you can make 23 electronic projects. In the eBook, everything is detailed in step-by-step tutorials to learn and make electronic projects from the available components. The Kuman Arduino Starter Kit includes the following contents:

• Kuman UNO R3 Development Board
• Mini breadboard
• ULN2003 stepper motor driver board
• LEDs (5 x Red, 5 x Green, 5 x Yellow, 1 x three-color)
• Vibration Sensor (2)
• Photoresistor (3)
• Adjustable potentiometer
• LM35 temperature sensor
• Infrared receiver
• Keycap (4)
• Flame sensor
• Active buzzer (tone generator)
• Key switch (4)
• Passive buzzer (piezo buzzer)
• Jumper cap
• Remote Control
• Large breadboard
• Breadboard module
• Component box
• 16 x 2 Screen LCD
• DuPont line 10pin
• Breadboard line (30)
• 8*8 dot matrix
• HC-SR04 module
• 4 digit 8 segment tube
• IC 74HC595
• Battery Holder
• 1 digit 8 segment tube
• 40pin pin header
• Resistors (5 x 220O, 5 x 330O, 5 x 1KO, 5 x 10KO)
• Battery 9V
• Thermistor module
• Touch sensor
• CD with tutorial
• Prototype extension board
• USB cable
• Plastic box
• 5V stepper motor

The best part is almost all basic electronic components are included in this kit for beginners to get familiar with the Arduino boards and make projects with the given components. No advanced level components are added to the list, every person with little to no electronic and programming knowledge can use these components. The material used for these contents is top-notch and the price is less than the official Arduino starter kit. All components are packed in the plastic box to help you stay organized and use them based on your needs and requirements.

3. Elegoo Mega 2560 Project Ultimate Starter Kit

Elegoo Mega 2560 is one of the best starter kits available in the market. This Elegoo kit comes with more than 200 pieces of components that anyone can use to make the electronic project. The sensors and modules are added to the kit including water level sensor, RFID reader, ultrasonic sensor, motion sensor, and accelerometer/gyroscope module. While basic components include a potentiometer, resistors, and LEDs. Moreover, it includes a book with 35 lessons for anyone to get started with the kit. The Arduino Mega 2560 projects are detailed in an easy-to-follow guide and the kit contains code and images of assembled circuits, helping you better understand the nature of the components included. The Arduino Mega kit includes the following components:

• LEDs (5 x Yellow, 5 x Red, 5 x Green, 5 x Blue, 1 x RGB)
• MEGA2560 Controller Board
• Thermistor
• Ceramic Capacitor(22pf & 104pf) (10)
• Stepper motor
• Diode Rectifier (1N4007) (5)
• Servo motor
• Joystick module
• Ultrasonic sensor
• Photoresistor (2)
• IR receiver
• Remote
• RFID module
• DHT11 Humidity and Temperature Module

You may find difficulty in getting familiar with this kit at the start, but once you get used to it, you’ll start loving it eventually. This starter kit includes an Arduino clone developed by Elegoo. Which works almost similar to the official Arduino board. Elegoo pays special heed to ensure the quality of the product and some wires and components are pre-soldered, saving your time to make the electronic project.

4. SunFounder Project Super Starter Kit

This is another kit to help you get familiar with the Arduino boards. You’ll get more than 200 components in the kit from which you can make around 25 amazing projects. This is cheap, this is high quality, best for beginners. Moreover, you’ll get the DVD stuffed with step-by-step tutorials to make different Arduino projects with the available components. It comes with a UNO R3 controller board and you can extend the functionality of this board by incorporating it with other Arduino boards including, Arduino Mega 328, Arduino Mega 2560, and Arduino Nano. The SunFounder Super Starter Kit includes the following components:

• Project Box
• 40 Pin Header
• Shift Resister 74HC595N (2)
• LEDs (1 x RGB, 16 x Red, 2 x White, 2 x Green, 2 x Yellow)
• 555 Timer IC
• H-Bridge Motor Driver L293D
• Accelerometer ADXL335
• Optocoupler 4N35 (2)
• LCD1602 Character Display
• Dot Matrix Display 8×8
• Rotary Encoder
• Push-Button (5)
• Resistors (8 x 220O, 4 x 1KO, 4 x 10KO, 1 x 1MO, 1 x 5.1MO)
• Switch
• Potentiometer 50KO
• Booklet
• USB Cable
• DC Motor
• Jumper Wire Male to Male (65)
• PNP Transistor S8550 (2)
• Fan
• Dupont Wire Female to Male (20)
• Passive Buzzer
• 7-Segment Character Display (2)
• Diode (4)
• Breadboard
• NPN Transistor S8050 (2)
• Capacitors (4 x 100nF, 4 x 10nF)

All basic components are included in the kit to help beginners make a range of electronic projects with an Arduino board. The components are packed in a plastic box with different sections, helping you arrange the components, and making it easy for you to find the required component for the project. The components are manufactured with high-quality material, ensuring the high performance of these components during the execution of electronic projects. SunFounder MEGA2560 board is an Arduino clone though, it is fully compatible with the Arduino software.

5. Elegoo UNO Project Super Starter Kit

This is another quality product introduced by Elegoo. It is good for beginners to get familiar with the Arduino board and go from basic to advanced level. The kit includes a CD that comes with 22 lessons to use the kit with the available components. The best part? It is cheaper than the Arduino official starter kit and contains almost the same features required for beginners to learn and make awesome Uno R3 projects from the components included. This kit features Elegoo Uno R3. The following are the components added to this Elegoo Uno kit:

• 16x2LCD Module ( with pin header)
• Elegoo UNO R3 (Compatible with Arduino Uno)
• Breadboard Power Supply Module
• Breadboard
• Breadboard Expansion Board
• Joystick Module
• ULN2003 Stepper Motor Driver Board
• IR Receiver
• Servo Motor (SG90)
• Stepper Motor
• DHT11 Temperature and Humidity Module
• Ultrasonic Sensor
• 9V Battery
• Buzzer (Active and Passive)
• 65 Jumper Wire
• USB Cable
• 5V Relay
• Potentiometer
• Remote
• Tilt Switch
• 4 digit 7-segment Display
• Button (5)
• 1 digit 7-segment Display
• LEDs (5x Yellow, 5x Blue, 5x Green, 5x Red, 1x RGB)
• Photoresistor (2)
• P2N2222 NPN Transistor (2)
• Thermistor
• Female-to-male DuPont Wire (10)
• IC 74HC595 Shift Register
• Diode 1N4007 (2)
• Resistor (120)

These components are neatly packaged in a box. What makes this kit special? The affordable price of this Uno R3 Starter kit helps it stand out from the rest of the kits available in the market.

6. Vilros Arduino Uno 3 Ultimate Starter Kit

This Vilros Arduino Starter Kit is stuffed with all basic components to make electronic projects with the Arduino boards. This kit comes with a Genuine Arduino Uno Rev3 Board from which you can develop a range of Arduino projects. It contains more than 190 parts and components that you can use for electronic projects. Developed with high-quality material, this kit includes a 72-page instruction guide that details the instructions to make Arduino projects with the given components. This Vilros Arduino Starter Kit comes with the following components:

• 1N4148 Diodes (2)
• Arduino & Breadboard Holder
• Bread Board
• Shift Register 74HC595
• Arduino Uno R3
• NPN Transistors P2N2222A (2)
• Temperature Sensor TMP36
• Small Servo
• 5V Relay
• USB Cable
• Jumper Wires (65)
• 10K Trimpot
• Piezo Buzzer
• DC Motor with wires
• Big 12mm Buttons (2)
• Resistors (45 x 330O and 45 x 10KO)
• Photocell
• LEDs (1x RGB, 10 x Red, 10 x Yellow)

This Arduino kit is better for beginners who want to get a hold of different components with the Arduino boards.

7. Smraza Ultimate Starter Kit

Next comes in the list is Smraza Ultimate Starter Kit. It comes with a PDF file that contains step-by-step tutorials for more than 15 projects - source code for all those projects is also included in the PDF file. This kit includes 150 basic components that you can use with the Arduino to make electronic projects. Everything is neatly packed in a plastic container, helping you stay organized and use the components based on your needs and requirements. Again, this kit is best for beginners as it contains all the basic components that are compatible with the Arduino boards. The Smraza Ultimate Starter Kit includes the following contents:

• UNO R3 Controller Board
• Breadboard Expansion Board
• Thermistor
• LCD 1602 Module (with pin header)
• Potentiometer (2)
• Servo Motor
• 830 tie-points Breadboard
• Ultrasonic Distance Sensor
• Stepper Motor
• LEDs (1X RGB, 5X Green, 5X Red, 5X Blue, 5X Yellow)
• ULN2003 Stepper Motor Driver Board
• Photoresistor (2)
• 4 Digit 7-Segment Display
• Power Supply Module
• Active Buzzer
• Diode Rectifier 1N4007 (2)
• Passive Buzzer
• 2N2222 Transistors (2)
• Tilt Switch
• 7-Segment Display
• IR Receiver Module
• IC 74HC595
• DHT-11(Temperature and Humidity Sensor)
• Joystick Module
• 9V Battery Adapter
• 9V Battery with DC
• Resistors (10X 2K, 10X 5.1K, 10X 10K, 10X 10R, 10X 330R)
• Male to Female Jumper Wires
• USB Cable
• 65xJumper Wire
• Water Level Sensor
• Small Button (5)
• IR remote control
• 40 Pin Shape Header
• 40 Pin Header
• Resistors (10X 220R, 10X 1M, 10X 100R, 10X 100K, 10X 1K)

Not only you can make some basic Arduino projects with this kit, but you can also expand this kit with the sensors and make some advanced Arduino projects. The best part? Some of the components are pre-soldered, saving your time to make electronic projects, helping you stay focused on the programming and other parts of the projects. That’s all for today. Hope you find this article helpful. If you have any questions, you can approach me in the section below, I’d love to help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share so we keep coming back with quality content customized to your exact needs and requirements. Thank you for reading the article.

D13003K Datasheet, Pinout, Power Ratings & Applications

Hi Friends! I welcome you on board. Thank you for clicking this read. In this post today, I’ll document the Introduction to D13003K. The D13003K is an NPN silicon transistor mainly employed for switching and amplification purposes. It comes with a power dissipation of around 50W which demonstrates the amount of energy this device releases during the functioning of this device. As this is an NPN transistor as here electrons are the major charge carriers. The collector current is 1.8A which means it can support load under 1.8A. The emitter-base voltage is 9V which means it needs 9V to bias this device and start the transistor action. I suggest you read this post all the way through as I’ll walk you through the complete Introduction to D13003K covering pinout, datasheet, power ratings, working principle, applications, and physical dimensions. Let’s get started.

Introduction to D13003K

• The D13003K is a power transistor made of silicon material and falls under the category of NPN transistors.
• This device is composed of three layers where one is a p-doped layer that stands between the two n-doped layers.

• This component comes with three terminals known as collector, emitter, and base. All these terminals are different in terms of doping concentrations.
• The power dissipation of this device is 80W which is the amount of power released during the working of this device.

• The D13003K belongs to bipolar junction transistors where electrons are the major carriers. The bipolar junction transistors are divided into two main types NPN transistors and PNP transistors. In NPN transistors electrons are the major carriers while in the case of PNP transistors holes are the major carriers. They are called bipolar junction transistors because both electrons and holes are responsible for the conductivity inside the transistor.
• These bipolar junction transistors are current-controlled devices because a small current at the base terminal is employed to control large output current at the remaining terminals.
• The MOSFETs, on the other hand, are voltage-controlled devices that come with terminals named drain, source, and gate.
• The mobility of electrons is better than the mobility of holes the reason NPN transistors are preferred over PNP transistors for a range of applications.

D13003K Datasheet

Before you embed this device into your electrical project, it is better to scan through the datasheet of D13003K. The datasheet features the main characteristics of the device. Click the link below to download the datasheet of D13003K:

D13003K Pinout

The following figure represents the pinout diagram of D13003K. This NPN transistor contains three terminals known as: 1: Base 2: Collector 3: Emitter All these terminals come with different doping concentrations. The collector terminal is lightly doped while the doping concentration of the emitter terminal is high. The base side is 10-times more doped than the collector side.

D13003K Working Principle

• The base pin plays a vital role to start the transistor action. When voltage is applied at the base pin, it will bias the device, and as a result, the current will start flowing from the collector to the emitter terminal.
• As this is an NPN transistor here current flows from collector to emitter terminal and in the case of PNP transistor current flows from emitter to collector terminal.

• These bipolar junction devices are not symmetrical in nature. And the different doping concentration of all three terminals is responsible for the lack of symmetry of this device.

• This means if we try to exchange emitter and collector terminals then the device will start working in reverse active mode, and stop working in forward active mode.

D13003K Power Ratings

The following table features the absolute maximum ratings of D13003K.

Absolute Maximum Ratings of D13003K
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	1.8A
5	Power dissipation	50W
6	Base current	0.9A
7	Operating and storage junction temperature range	-55 to 150C

• While embedding this chip into your project, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, it will put your entire project at stake.
• The junction temperature and storage temperature ranges from -55 to 150C.
• It is important to note that, don’t apply these ratings more than the required time, else they can affect device reliability.
• The collector-emitter 400 and collector-base voltage is 700. And total power dissipation is 50W which demonstrates that this device will release 50W energy during the working of this device.

D13003K Applications

D13003K is used in the following applications.

• Used in a common power amplifier.
• Used in voltage regulator circuits.
• Used in electronic Ballasts.
• Used in Bistable and Astable multivibrators circuit.
• Incorporated in modern electronic circuits.

• Used in the high switching power supply.
• Used in high-frequency power transform.
• Employed to support loads under 1.8A.
• Used in energy-saving lights.

D13003K Physical Dimensions

The image below represents the physical dimensions of D13003K. By reading those dimensions you can evaluate the space required for your component in the electrical project. That’s all for today. Hope you find this article helpful. If you have any questions, you can pop your comment in the section below. I’m willing to help you the best way I can. You’re most welcome to share your valuable feedback and suggestions around the content we share so we keep coming up with quality content customized to your exact needs and requirements. Thank you for reading the article.

IRFZ44N MOSFET Characteristic Curves in Proteus ISIS

Hello Learners, Welcome to another useful tutorial at The Engineering Projects. In the world of electronics and circuits, many useful devices are designed that can minimize the requirement of large and complex circuits. At the Present time, we are working at such a device works very near to the base of many circuits i.e, IRFZ44N MOSFET. We'll  approach to the answers of following Questions:

1. What is IRFZ44N MOSFET?
2. How is the Structure of IRFZ44N MOSFET?
3. What is the working mechanism for the IRFZ44N MOSFET?
4. How can we find the characteristics of IRFZ44N MOSFET in Proteus ISIS?

You will have some important chunks of information about the topic in DID YOU KNOW sections.

What is IRFZ44N MOSFET

As you can see, MOSFET is a acronym of Metal Oxide Silicon Field Effect Transistor. We introduce the IRFZ44N MOSFET as:

IRFZ44N is an important type of N-type MOSFET that consist of three pins, have a hgh Drain current and a low Rds Values.

It is the type of IGFET( Isolated Gate Field Effect Transistors). A large amount of MOSFETs are used as switch every year. When we compare it with BJT , we find that it requires almost not current to control the load current unlike BJT. If you want in-depth study on this mosfet then you should have a look at IRFZ44N Datasheet.

DID YOU KNOW ???

MOSFET is a semi-conductor device that is Fabricated by the Controlled oxidation of Semi-conductors (Silicon in most case). It can work in both modes of operations i.e, Depletion and enchantment.

Structure of IRFZ44N MOSFET

When we observe the IRFZ44N MOSFET we find that it consist of mainly three pins as described below:

Pin Number	Pin Name	Role
1	Gate	Controls biasing
2	Drain	Current input
3	Source	Current Output

Vgs: The IRFZ44N MOSFET is a voltage controlled device that means it can be turned on and off when we apply a required threshold Voltage. This voltage is termed as Vgs. Vds: It is the absolute Maximum Voltage of IRFZ44N MOSFET between Drain and Source. This is salient characteristic of IRFZ44N MOSFET because during the operation of IRFZ44N MOSFET Drain-source voltage should kept less than maximum rated value. Here D Stands for Drain and S stands for Source. Ids: It is the amount of current that passes from Vds to the IRFZ44N MOSFET. The direction of this current is important during the Operations of IRFZ44N MOSFET.

DID YOU KNOW ???

The MOSFET is a better version of Junction Field Effect Transistor. Due to the limitation of JFET for the conduction in one side only ( some time it is the advantage), the Designers made a new type of Transistor that can change the conductivity when the amount of applied voltage is change and named them as MOSFET.

Characteristic Curve of IRFZ44N MOSFET

The quality and the suitability of any transistor is checked through its characteristic curve. The characteristic curve of IRFZ44N MOSFET have two phases.

1. Depletion Mode
2. Enhancement Mode

Depletion Mode

In this mode the Transistor is closed during the zero bias voltage at gate terminal. Hence the IRFZ44N MOSFET  is said to be switched ON. The channel width increases when the Gate Voltage is increased to the positive side. in return, the current Ids increases. During the situation when Gate voltage's value is decreased, the Width of the channel decreases and Ids follows the same rule.

DID YOU KNOW ???

The IRFZ44N MOSFET is also known as the Power MOSFET. It is 22oAB through hole package that has three pins. The top metal tab is also called the drain because both of them are same.

Enhancement Mode

This mode is usually considered as normally open switch as the transistor does not conduct the current when the Gate Voltage is zero. If we apply a positive voltage to the gate then a Drain current follows through the Gate. The Enhancement mode of IRFZ44N MOSFET  enhances the channel because when the Drain current's value is increased the channel width increase and the decrement of the width is for vise versa.

IRFZ44N MOSFET Characteristic Curve in Proteus ISIS

To understand the whole discussion mentioned above, Let's make a characteristic Curve of IRFZ44N MOSFET in Proteus ISIS. To do this, just follow the simple steps given next:

• Power up your Proteus software.
• Go to Pick Library by pressing the "P" button given at the left side of the screen.
• Choose IRFZ44N MOSFET.
• Arrange the Transistor at the working area.
• Go to Terminal Mode from the left most side bar of the screen.
• Choose Ground Terminal and set it just below the IRFZ44N MOSFET.
• Go to Generation mode and select DC.

• Set one DC probe at the left of the irfz44n MOSFET and take another and set it at the upper side of irfz44n MOSFET.
• Connect at the components set until now with the Help of Connecting wires.

• Select the current probe and set it just after the Vds. Make sure its direction is toward the irfz44n MOSFET.
• Go to Graph Mode>Transfer and set a Transfer Graph just after the Circuit.

• Right Click the Graph>Edit Properties>Set the Vds as Source 1>Set Vgs as Source 2>click Ok.
• Right Click the Graph>Add Trace>Set Ids as the Probe>Click ok.
• Right Click the Graph>Simulate.
• You will Get the required output:

Hence, in this article, we learned about the IRFZ44N MOSFET, we saw the introduction of IRFZ44N MOSFET, Learned about the structure of IRFZ44N MOSFET, saw some important concepts about the IRFZ44N MOSFET and performed a Practical Implementation of IRFZ44N MOSFET for the Characteristic Curves in Proteus ISIS.

D13007K NPN Transistor Datasheet, Pinout, Power Ratings & Applications

Hello Fellas! Hope you’re well today. Happy to see you around. In this post today, I’ll walk you through the Introduction to D13007K. The D13007K is an NPN power transistor mainly used for switching and amplification purpose. This device is made of silicon material and falls under the category of bipolar junction transistors. As this is an NPN transistor so here major charge carriers are electrons. Holes are major carriers in the case of PNP transistors. This is a high voltage high current capability device used in energy-saving lamps. The collector current of this chip is 8A which means it is best for loads under 8A. And the power dissipation is 80W which projects it is eligible to release 80W power during the operation of this device. The collector-base voltage is 700V and collector-emitter voltage is 400 while the voltage across the base and emitter terminals is 9V which is the voltage needed to start the transistor action and bias the device. Read this entire post till the end as I’ll document the complete Introduction to D13007K covering datasheet, pinout, power ratings, working principle, applications, and physical dimensions. Let’s dive in.

Introduction to D13007K

• The D13007K is a power transistor that belongs to the NPN transistor family.
• The three terminals like emitter, base, and collector make this entire device. All these terminals are connected to the external electrical circuit.
• This is a current-controlled device because the small current at one terminal is employed to handle large current at the remaining terminals.

• While MOSFETs are voltage-controlled devices and come with terminals like a drain, source, and gate. The gate plays the same role in MOSFETs as what base plays in bipolar junction transistors.
• The bipolar junction transistors are mainly divided into two types one is PNP transistors and one is NPN transistors.

• Both electrons and holes play a key role in the conductivity of bipolar junction transistors.
• But in the case of PNP transistors holes are responsible for the major part of conductivity carried out inside the device while in the case of NPN transistors electrons play a key role in the overall conductivity inside the transistor.
• PNP transistors are considered less efficient than NPN transistors because electrons are quicker and efficient in the conductivity process compared to holes. The mobility of electrons is far better and quicker than the mobility of holes inside the transistor.

D13007K Datasheet

It is wise to check out the datasheet of the device before incorporating it into your electrical project. The datasheet comes with the main characteristics of the device. Click the link below to download the datasheet of D13007K.

D13007K Pinout

The following figure shows the pinout diagram of D13007K. The D13007K carries three terminals known as: 1: Base 2: Collector 3: Emitter All these terminals carry different doping concentrations. Which leads to the lack of symmetry of this device. The emitter side is highly doped and the collector side is lightly doped. While the collector side is 10-times less doped than the base side.

D13007K Working Principle

• The transistor working principle is straightforward and simple. It all initiates from the base side. When voltage is applied at the base side, it will bias the device, and as a result, the current will start flowing collector to the emitter terminal.
• As this is an NPN transistor so here current flow is carried out from the collector to emitter terminals this is the opposite in the case of PNP transistors.

• When voltage is applied at the base pin in PNP transitory, the current starts flowing from the emitter to the collector terminal.

• As described earlier this bipolar device is not symmetrical. Which means if you interchange both emitter and collector side then both terminals will start working in reverse active mode and the device will stop working in forward active mode.

D13007K Power Ratings

The following table features the absolute maximum ratings of D13007K.

Absolute Maximum Ratings of D13007K
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	8A
5	Power dissipation	80W
6	Base current	4A
7	Operating and storage junction temperature range	-55 to 150C

• While incorporating this device into your project, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, it can damage the entire project.
• The junction temperature and storage temperature ranges from -55 to 150C.
• The collector-emitter and collector-base voltages are 400V and 700 respectively. And total power dissipation is 80W which demonstrates the amount of power released during the functioning of this device.
• It is important to note that, don’t apply these ratings more than the required time, else they can affect device reliability.

D13007K Applications

D13007K is used in the following applications.

• Used in Bistable and Astable multivibrators circuit.
• Used in voltage regulator circuits.
• Employed to support loads under 12A.
• Used in electronic Ballasts.

• Incorporated in modern electronic circuits.
• Used in high-frequency power transform.
• Used in a common power amplifier.
• Used in energy-saving lights.
• Used in the high switching power supply.

D13007K Physical Dimensions

The image below represents the physical dimensions of D13007K. By scanning those dimensions you can evaluate the space required for your component in the electrical project. That’s all for today. Thank you for clicking this read and reading it. You are most welcome to share your valuable feedback and suggestions in the section below. They help us produce quality content. You can approach me in the section below if you need any help regarding this article, I’m happy and ready to help you the best way I can. Thank you for reading this post.

MJE13009 NPN Transistor Datasheet, Pinout, Features & Applications

Hi Guys! I welcome you on board. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to MJE13009. MJE13009 is a semiconductor device made of silicon material that falls under the category of NPN transistors. This device is mainly used for switching and amplification purposes. The power dissipation of this device is 100W and the emitter-base voltage is 9V which is the amount of voltage needed to bias the device. I suggest you read this post all the way through as I’ll describe the complete Introduction to MJE13009 covering datasheet, pinout, features, and applications. Let’s get started.

Introduction to MJE13009

• MJE13009 is an NPN transistor mainly used for amplification and switching purposes.
• This is a semiconductor device made of silicon material and comes in a TO-220 package.
• MJE13009 is a three-layer device where two n-doped layers surround the one p-doped layer.
• This integrated chip contains three terminals named emitter, base, and collector.

• The small input current at the base pin is used to control the large output current at the remaining two terminals.
• MJE13009 is a type of bipolar junction transistor that belongs to the NPN transistor family where electrons are the major charge carriers.
• In a bipolar junction transistor, both electrons and holes play a key role in the conductivity inside the transistor. However, in the case of NPN transistors, electrons are major charge carriers while in the case of PNP transistor conductivity is carried out by the holes as major charge carriers.
• In NPN transistors current flows from the collector to emitter terminal while in the case of PNP transistor current flows from emitter to collector terminal.

• The NPN devices are preferred over PNP devices for a range of switching applications because the mobility of electrons is better than the mobility of holes.
• The bipolar junction transistors are current-controlled devices in contrast to MOSFETs that are voltage controlled devices and contain terminals drain, source, and gate. The gate terminal plays the same role in MOSFET what the base terminal plays a role in bipolar junction transistors.
• The collector-emitter voltage of this device is 400V and the collector-base voltage is 700V while the emitter-base voltage is 9V which is the amount of voltage that can bias the device and start transistor action.
• MJE13009 is mainly developed for high-power high-speed switching applications. And the collector current of this device is 12A which means it can support load up to 12A.

MJE13009 Datasheet

Before you incorporate this device into your electrical project, it’s wise to go through the datasheet of the component that features the main characteristics of the device. Click the link below to download the datasheet of MJE13009.

MJE13009 Pinout

The MJE13009 carries three terminals known as:

1. Base
2. Collector
3. Emitter

All these terminals are used for external connection with the electrical circuit. The following figure shows the pinout diagram of MJE13009. The terminals carry different doping concentrations. The collector pin is a lightly doped terminal while the emitter terminal is a highly doped pin compared to other terminals. Similarly, the base pin is 10-times more doped than the collector terminal.

MJE13009 Working Principle

• The base pin is responsible for the overall transistor action. When voltage is applied at the base pin, it helps in biasing the device and current will start flowing from collector to emitter terminal.

• The different doping concentration of all these terminals is responsible for the lack of symmetry inside transistor device.

• Yes, bipolar junction transistors are not symmetrical which means if you interchange both collector and emitter terminals, it will force the terminals to stop acting in forward active mode and as a result, both terminals will start operating in reverse action mode.
• This exchanging of terminals can influence the value of both common-emitter current gain and common-base current gain.

MJE13009 Power Ratings

The following table shows the absolute maximum ratings of MJE13009.

Absolute Maximum Ratings of MJE13009
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	12A
5	Power dissipation	100W
6	Base current	6A
7	Operating and storage junction temperature range	-55 to 150C

• The junction temperature and storage temperature ranges from -55 to 150C.
• The collector-emitter and collector-base voltages are 400V and 700V respectively. And total power dissipation is 100W which is the amount of power released during the working of this device. When you’re working with this integrated circuit, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, you’ll be risking your entire project.
• Moreover, don’t apply these ratings more than the required time, else they can affect device reliability.

MJE13009 Applications

MJE13009 is used in the following applications.

• Used to support loads under 12A.
• Installed in the motor control circuit.
• Employed in Bistable and Astable multivibrators circuit.

• Employed for switching and amplification purpose.
• Used in voltage regulator circuits.
• Employed in the switched-mode power supply.
• Used in H-bridge circuits.
• Used in modern electronic circuits.

MJE13009 Physical dimensions

The following figure represents the physical dimensions of the IC MJE13009. By looking at the physical dimensions of this component you can evaluate the space required for your circuit and install the device accordingly. That’s all for today. Hope you find this article helpful. If you have any questions you can pop your comment in the section below. I’m willing and happy to assist you the best way I can. Feel free to share your feedback and suggestions around the content we share so we keep producing quality content customized to your exact needs and requirements. Thank you for reading this article.

MJE13003 NPN Transistor Datasheet, Pinout, Features & Applications

Hi Friends! Hope you’re well today. I welcome you on board. In this post today, I’ll demonstrate the Introduction to MJE13003. MJE13003 is an NPN silicon transistor mainly used for high-speed high voltage power switching applications. This chip is a three-terminal device where a small current at one terminal is used to produce a large current at the remaining terminals. The collector current is 1.5A which projects this device can support load up to 1.5A. I suggest you buckle up as I’ll describe the complete Introduction to MJE13003 covering datasheet, pinout, working principle, applications, power ratings, and physical dimensions. Let’s get started.

Introduction to MJE13003

• MJE13003 is a bipolar junction transistor that belongs to the NPN transistor family. It is mainly used for switching and amplification purposes and comes in the TO-220 package.
• The power dissipation of this device is 40W which is the amount of power released during the working of this device.

• MJE13003 is a power transistor that comes with three terminals known as emitter, base, and collector. The small input current at the base pin is used to induce a large output current at the emitter and collector terminals.
• Bipolar junction transistors are the type of transistors where two charge carriers i.e. holes and electrons, play a vital role in the conductivity of the device.
• Bipolar junction transistors are divided into two types where one is an NPN transistor and the other is a PNP transistor.
• In NPN transistors, both electrons and holes are responsible for the conductivity of the device, however, electrons are major charge carriers in this case while holes are minority carriers.
• Similarly, both electrons and holes play a vital role in the conductivity of PNP transistors but here holes are majority carriers and electrons are minority carriers.

• Moreover, current flows from emitter to collector terminal in PNP transistors while in the case of NPN transistors current flows in opposite direction i.e. from collector to emitter terminals.
• When comparing NPN transistors with PNP transistors, the NPN transistors are preferred over PNP transistors because electrons can flow faster than holes, making PNP devices more valuable for a range of applications.
• These bipolar junction transistors are current-controlled devices while MOSFETs are the type of transistors that are voltage-controlled devices and carry terminals named drain, source, and gate.

MJE13003 Datasheet

It is wise to scan through the datasheet of the component before you incorporate this device into your electrical project. The datasheet features the main characteristics of the device. You can download the datasheet of MJE13003 by clicking the link below.

MJE13003 Pinout

MJE13003 is a power transistor that comes with three terminals named:

1. Base
2. Collector
3. Emitter

The following figure shows the pinout diagram of MJE13003.

• The external electrical circuit is connected with this transistor through these terminals. All these terminals come with different doping concentrations.
• The emitter pin is highly doped while the collector pin is lightly doped. And the base terminal is 10-times more doped than the collector pin.

• And large current at the emitter and collector terminals is produced by using the small current at the base terminal.

MJE13003 Working Principle

• The base pin is the location responsible for the entire transistor action. When you apply a voltage at the base pin, it will bias the device and as a result, the current will start flowing from collector to emitter terminal.
• As this is an NPN transistor so here electrons are the major carriers and holes are minority carriers.

• Know that bipolar junction transistors are not symmetrical devices. Which projects if you interchange the emitter and collector terminal, it will prevent the terminals to work in forward active mode, and thus both terminals will start working in reverse active mode.
• Exchanging these terminals will also influence the values of common-base current gain and common-emitter current gain.

MJE13003 Absolute Maximum Ratings

The following table shows the absolute maximum ratings of MJE13003.

Absolute Maximum Ratings of MJE13003
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	1.5A
5	Power dissipation	40W
6	Base current	0.75A
7	Operating and storage junction temperature range	-55 to 150C

• The total power dissipation of this device is 40W which is the amount of power released during the functioning of this device.
• While collector-base voltage is 700V and collector-emitter voltage is 400V. The emitter-base voltage is 9V which shows the amount of voltage required to bias this device.
• When you’re working with the component, make sure the ratings don’t surpass the absolute maximum ratings. Otherwise, they can badly damage the device, thus the entire project.
• Also, don’t apply these ratings more than the required time, else they can affect device reliability.

MJE13003 Applications

MJE13003 is employed in the following applications.

• Used in modern electronic circuits.
• Used in the switched-mode power supply.
• Used in voltage regulator circuits.

• Used for switching and amplification purpose.
• Used in Bistable and Astable multivibrators circuit.
• Used to support loads under 1.5A.
• Used in H-bridge circuits.
• Used in the motor control circuit.

MJE13003 Physical Dimensions

The following figure shows the physical dimensions of MJE13003. Using these dimensions you can evaluate the space required to install this device into the electrical circuit. That was all about the Introduction to MJE13003. Hope you’ve enjoyed reading this article. If you have any questions, you can approach me in the comment section below. I’m willing and happy to help you the best way I can. You are most welcome to share your feedback and suggestions around the content we share. They help us produce quality content tailored to your exact needs and requirements. Thank you for reading the article.

2-bit Full Subtractor in Proteus ISIS

Hello mentees! Welcome on the behalf of The Engineering Projects. We are here with a new lesson about the Digital Logic Circuits. Logic Circuits work as heart in many electronic Circuits. The topic of today is Full Subtractor in Proteus and you will find the answers of the following questions:

1. What are 2 bit  Full Subtractors?
2. How can we design the Truth Table of 2 bit Full Subtractor?
3. How can we implement the 2 bit Full Subtractor in Proteus ISIS?

You will also learn some important chunks of information in the DID YOU KNOW sections.

2 bit Full Subtractors

A full Subtractor works really well in the processor. We’ll talk about it function but before that have a look at its definition:

• 2 bit Full Subtractor is a Combinational Logic that contain three Inputs and Two outputs and perform the function of Subtraction with two bits.
• Minuend: The 1st input is called the Minuend used to take the bit from which the 2nd value will be Subtracted.
• Subtrahend: It is called the 2nd input that is subtracted from Minuend.
• Borrow in: It is the third input that is use to take the value of the Previous borrow and we’ll denote it as B(in) here.

• Borrow Out: The Borrow out is symbolized as B(out) and it the resultant borrow that the output Terminal shows.
• Difference: This is the main result that was the concern of the experiment and its value totally depends upon the binary subtraction rules.

DID YOU KNOW?????????????????

There is another circuit called Half Subtractor that is used for the subtraction of bits but the foremost disadvantage of that circuit was its inability to work with the borrow taken in the previous calculation and the designers worked for another better Subtractors.

Truth Table of 2-bit Full Subtractor

If you know about the Concept of binary subtraction, you can use your knowledge to generate a Truth Table of 2 bit  Full Subtractor so that one can design a feasible Circuit of 2 bit Full Subtractor. The Table contain all the records that can be possible for our experiment and its result into the bargain. Thus the Truth Table for the Full Subtractor is shows as:

Minuend	Subtrahend	B(in)	Difference	B(out)
0	0	0	0	1
0	0	1	1	1
0	1	0	1	1
0	1	1	0	1
1	0	0	1	0
1	0	1	0	0
1	1	0	0	0
1	1	1	1	1

Working Mechanism of 2 bit Full Subtractor

When we observe the Circuit of 2 bit Full Subtractor, we found that it is combination of two circuits of Half subtractors and the output of each circuit is then fed into an OR Gate through which we get the output of borrow. We have two types of outputs in the 2 bit  Full Subtractor:

1. Difference
2. Borrow

DID YOU KNOW?????????????????

The Full Subtractor is the one of the most fundamental Logic circuits of that are used for two bit subtraction in many computing system.

Let's have a look at the procedure of calculation of both.

Difference

The binary subtraction is similar to the decimal subtraction but it works with only two digits called 0 and 1 instead of 1 to 10 in the decimal. When we examine the answer of the bit difference while using a Truth Table in the Half Subtractor circuit, we found that it is identical to the XOR Gate. Therefore we use a XOR Gate for the Difference that is introduced as:

The type of Logic Circuit that gives the output HIGH only when both its inputs have inverse value to each other and vise versa. 

Thus the truth table for the XOR Gate is given as:

A	B	A XOR B
0	0	0
0	1	1
1	0	1
1	1	0

The output of the XOR Gate is Fed into another XOR Gate for the Full subtraction which has the connection of a Borrow Input B(in) at its Second input.

DID YOU KNOW???????????????

The Application of the  Full Subtractor is found in the ALU of computer where they are responsible for the Graphic application to decrease the difficulty in the CPU and GPU.

Borrow

Many times, the situation arrives when the Minuend<Subtrahend and in this way, the circuit need to borrow a bit from the bit presented just after it. The Full Subtractor do this through the AND Gate that contain a NOT Gate at its one end. For full Subtractor, this arrangement is again fed into the duplicated circuit and the both the outputs of this AND Gate is fed into the OR Gate that gives us the Borrow(out).

2 bit Full Subtractor in Proteus ISIS

• Start up your Proteus Software.
• Collect the following devices from the Pick Library.

Devices Required

1. XOR Gate
2. AND Gate
3. OR Gate
4. Logic Toggle
5. LED-Red

• Arrange the XOR Gate, AND Gate and NOT Gate at the working area according to the arrangement given below:

• This will form a Half Subtractor. Select the devices through a square selection area.
• Copy the whole arrangement through left click>copy to clip board.
• Paste the arrangement in the side of the circuit.
• Add an OR gate at the right side of the system. The screen should look like the image given below:

   

• Add three Logic Toggles at the left most side of the arrangement.
• Connect the Whole circuit through connecting wires by matching the circuit with the following image:
• This is the Full Subtractor circuit. Change the values of the Probes according to the Truth Table and record your observation.

  Consequently, Today we learned very useful circuit of Logic Design. We saw what are 2 bit  Full Subtractor, how can we design a  Truth Table of 2 bit Full Subtractor, what is the basic mechanism behind the working of 2 bit Full Subtractor and how can we perform a Practical implementation of 2 bit  Full Subtarctor using Proteus ISIS. In the next session, we'll learn how can we simulate a four bit Full Subtractor in Proteus ISIS and its basic concepts.

D13009K NPN Transistor Datasheet, Pinout, Power Ratings & Applications

Hello Folks! I welcome you on board. Happy to see you around. In this post today, I’ll walk you through the Introduction to D13009K. D13009K is a high voltage fast switching power transistor that falls under the category of NPN transistors. The collector current of this device is 12A which projects it can endure load under 12A. This chip is mainly used in amplification and switching applications. The small current change at one pair of terminals is used to produce a large current change across the remaining terminals. The power dissipation is 100W which features the amount of power this chip dissipates during the working of this integrated chip. I recommend you check out this post all the way through as I’ll demonstrate the complete Introduction to D13009K covering datasheet, pinout, power ratings, applications, and physical dimensions. Let’s get started.

Introduction to D13009K

• D13009K is an NPN bipolar junction transistor that is a high voltage fast switching power device. It is widely employed for switching and amplification purposes.
• This component contains three terminals named base, collector, and emitter. It generates a large current across emitter and collector terminals by changing a small current at the base side. This phenomenon is used for amplification purposes.

• The emitter-base voltage is 9V which details that it requires 9V to start the transistor action and bias this device.
• D13009K contains three layers. Two are n-doped layers and one is a p-doped layer. The p-doped layer sits between the two n-doped layers.

• Bipolar junction transistors are divided into two main types i.e. PNP transistors and NPN transistors.
• The D13009K is an NPN transistor where electrons are the major charge carriers. It is important to note that these devices are called bipolar devices because both holes and electrons are responsible for the conductivity inside the transistor.
• In NPN devices, electrons are the major charge carriers and in PNP devices, holes are the major carriers. Moreover, NPN transistors are preferred over PNP transistors since the mobility of electrons is faster and efficient than the mobility of holes.
• This bipolar junction transistor is a current-controlled device as opposed to MOSFETs that are voltage-controlled devices and carry pins like a drain, source, and gate. The drain side replaces the emitter, the source replaces the collector and the gate replaces the base pin in bipolar junction transistors.

D13009K Datasheet

Before you embed this chip into your electrical project, it’s wise to check out the datasheet of the device that features the main characteristics of the device. Download the datasheet of D13009K by clicking the link below.

D13009K Pinout

This power transistor contains three terminals named:

1. Base
2. Collector
3. Emitter

The following figure shows the pinout diagram of D13009K. The doping concentration of all these terminals is different. The collector pin is lightly doped while the emitter pin is highly doped. The base pin is 10-times more doped than the collector side.

D13009K Working Principle

• This device comes with high breakdown voltage and carries high current capability. It is a highly reliable product and features a high switching speed.
• The working of this device starts from the base pin. When you apply voltage at the base terminals, it will bias the device and start the transistor action. And current starts flowing from collector to emitter terminal.
• In NPN transistors current flows from collector to emitter terminal and in PNP transistors current flows from emitter to collector terminal.

• These bipolar devices are not symmetrical. This means if you try to exchange the collector and emitter side, it will prevent the terminals to work in forward active mode and force the terminals to work in reverse active mode.

• The different doping concentration of these devices is responsible for the lack of symmetry in these transistors.

D13009K Power Ratings

The following table features the absolute maximum ratings of D13009K.

Absolute Maximum Ratings of D13009K
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	12A
5	Power dissipation	100W
6	Base current	6A
7	Operating and storage junction temperature range	-55 to 150C

• When you’re working with the component, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, it can affect the entire project.
• The collector-emitter and collector-base voltages are 400V and 700 respectively. And total power dissipation is 100W which shows the amount of power released during the working of this chip. The junction temperature and storage temperature ranges from -55 to 150C.
• Plus, don’t apply these ratings more than the required time, else they can affect device reliability.

D13009K Applications

D13009K is used in the following applications.

• Used in energy-saving lights.
• Used in Bistable and Astable multivibrators circuit.
• Used in high-frequency power transform.
• Employed to support loads under 12A.
• Used in voltage regulator circuits.
• Used in a common power amplifier.

• Incorporated in modern electronic circuits.
• Used in electronic Ballasts.
• Used in the high switching power supply.

D13009K Physical Dimensions

The image below shows the physical dimensions of D13009K. By reading those dimensions you can evaluate the space required for your component in the electrical project. That’s all for today. Thank you for reading this entire post. You are most welcome to share your valuable feedback and suggestions around the content we share so we keep producing quality content based on your exact needs and requirements. You can approach me in the section below if you need any help regarding this article, I’m happy and willing to help you the best way I can. Thank you for reading this article.

MJE13007 NPN Transistor Datasheet, Pinout, Features & Applications

Hello Everyone! Happy to see you around. Thank you for clicking this read. In this post today, I’ll document the Introduction to MJE13007. MJE13007 is an NPN bipolar junction transistor that is a semiconductor device made of silicon material. This chip is mainly used for amplification and switching purposes. The collector-base voltage is 700V while the collector-emitter voltage is 400V. The power dissipation at temp 25C is 80W. This means 80W is released during the working of this device. This device can support load up to 8A because the current at the collector side is 8A. I suggest you read this entire post till the end as I’ll include the complete Introduction to MJE13007 covering datasheet, pinout, working principle, power ratings, applications, and physical dimensions. Let’s get started.

Introduction to MJE13007

• MJE13007 is an NPN bipolar junction transistor mainly used for high voltage high-speed switching applications.
• Three layers are used for the construction of this device. One is a p-doped layer that stands between two n-doped layers.
• MJE13007 includes three terminals named base, collector, and emitter. The small input current at the base side is used to generate a large output current across the emitter and collector terminals.

• The emitter-base voltage is 9V which means this device requires 9V to initiate the transistor action.
• Bipolar junction transistors come in two types i.e. NPN transistors and PNP transistors. This device MJE13007 falls under the category of NPN transistors where electrons are the major carriers while in the case of PNP transistors holes are the major carriers.
• It is important to note that in bipolar junction transistors both electrons and holes are involved in the conductivity inside the transistors but holes are majority carriers in PNP transistors while electrons are major carriers in NPN transistors.
• The mobility of holes is less efficient than the mobility of electrons, making NPN transistors a better choice for the range of applications.
• Moreover, the current flows from emitter to collector in PNP transistors while it flows from collector to emitter in NPN transistors.
• Transistors are mainly divided into two main types’ i.e. bipolar junction transistors and MOSFETs. The bipolar junction transistor are the current-controlled device while MOSFETs are the voltage-controlled devices that include terminals known as a drain, source, and gate.

MJE13007 Datasheet

Before you apply this device to your electrical project, it is wise to scan through the datasheet of the device that details the main characteristics of the device. Click the link below to download the datasheet of MJE13007.

MJE13007 Pinout

The MJE13007 includes three terminals named:

1. Base
2. Collector
3. Emitter

The following image represents the pinout diagram of MJE13007. The small current at the base side is used to control the large current at the remaining terminals. All these terminals are used for the external connection with the electronic circuit. While the collector side is lightly doped. The base side is 10-times more doped than the collector side.

MJE13007 Working Principle

• The base side is responsible for the overall transistor action. When voltage is applied at the base pin, it gets biased, and current will start flowing from the collector to the emitter terminal.

• This device MJE13007 is not a symmetrical device. The lack of symmetry is due to the difference in the doping concentration of all three terminals.

• If you try to exchange the emitter and collector terminals, it will prevent the device from working in forward active mode and as a result, both terminals will start working in reverse active mode, influencing the values of both common-emitter current gain and common-base current gain.

MJE13007 Power Ratings The following table shows the absolute maximum ratings of MJE13007.

Absolute Maximum Ratings of MJE13007
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	8A
5	Power dissipation	80W
6	Base current	4A
7	Operating and storage junction temperature range	-55 to 150C

• The power dissipation is 80W which is the amount of power that will dissipate during the working of this device. The collector-base voltage is 700V and the collector-emitter voltage is 400V.
• The emitter-base voltage is 9V which is the amount of voltage that you will apply to bias the device and start the transistor action.
• When you’re working with this chip, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, they can severely damage the device, thus the entire project.
• Moreover, don’t apply these ratings more than the desired time, else they can affect device reliability.

MJE13007 Applications

The following are the main applications of the MJE13007 NPN transistor.

• Incorporated in modern electronic circuits.
• Employed in the switched-mode power supply.
• Employed to support loads under 8A.
• Installed in the motor control circuit.

• Used in voltage regulator circuits.
• Used for switching and amplification purpose.
• Used in H-bridge circuits.
• Used in Bistable and Astable multivibrators circuit.

MJE13007 Physical Dimensions

The following figure presents the physical dimensions of MJE13007. By reading the physical dimensions you can get a hold of the space required to install this device into the relevant project. That’s all for today. Hope you find this article helpful. You are most welcome to share your feedback and suggestions around the content we share so we keep coming back with quality content tailored to your exact needs and requirements. You can approach me in the section below, for any query regarding this article. I’m happy and willing to help you the best way I can. Thank you for reading the article.

MJE13005 NPN Transistor Datasheet, Pinout, Features & Applications

Hi Guys! I welcome you on board. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to MJE13005. The MJE13005 is a high speed and high voltage power transistor that belongs to the NPN transistor family. This device can support load up to 4A and the emitter-base voltage is 9V which is the voltage required to bias the device and start the transistor action. I suggest you read this post all the way through as I’ll detail the complete Introduction to MJE13005 covering datasheet, pinout, features, and applications. Let’s get started.

Introduction to MJE13005

• The MJE13005 is an NPN transistor which is a high speed and high power device used for amplification and switching purposes.
• This component is made of three-layers where one is p-doped layers and the other two are n-doped layers. The p-doped layer stands between these two n-doped layers.
• The MJE13005 is a semiconductor device made of silicon material. It contains three terminals known as emitter, base, and collector and is termed as a current-controlled device as opposed to MOSFETs which are voltage-controlled devices and contain terminals source, drain, and gate.

• All these terminals carry different doping concentrations. The doping concentration of the collector pin is light and the doping concentration of the emitter pin is high compared to the other two terminals. The base pin is 10-times more doped than the collector pin. Moreover, the emitter side carries the entire current of the device since the emitter current is the sum of both collector current and base current.
• The bipolar junction transistors are mainly categorized into two types i.e. NPN transistors and PNP transistors.
• Both electrons and holes play a vital role in conductivity in both these transistors. But in the case of NPN transistors holes are the majority carriers and in the case of PNP transistors holes are majority carriers.
• The NPN transistors are preferred over PNP transistors for a range of applications because the mobility of electrons is better than the mobility of holes.
• NPN devices are sometimes known as “sinking devices” since they sink ground to the output. PNP devices are sometimes named “sourcing devices” since they source positive power to the output.
• The DC current gain of this device ranges from 8 to 40 which is the amount of current this device can amplify.

MJE13005 Datasheet

Before you embed this device into your electrical project, it’s wise to scan through the datasheet of this component that features the main characteristics of the device. Click the link below to download the datasheet of MJE13005.

MJE13005 Pinout

The following figure shows the pinout diagram of MJE13005. This device contains three terminals named:

1. Base
2. Collector
3. Emitter

The small current at the base side is used to produce a large current across two terminals. This device carries two junctions i.e. base-collector junction which is reverse biased and base-emitter junction which is forward biased.

MJE13005 Working Principle

• The working of this device starts from the base pin. When voltage is applied at the base pin, it results in biasing the device, and current starts flowing from collector to emitter terminal.

• Know that these bipolar junction transistors are not symmetrical devices. This means if we exchange both emitter and collector terminal, it prevents both these terminals to work in forward active mode and as a result, both these terminals will start working in reverse active mode. Doing this will affect the values of common-emitter current gain and common-base current gain.

• This lack of symmetry comes from the different doing concentrations of all three terminals.
• The Common-emitter current gain of this device ranges from 8-40 in this device, which is denoted by beta and the common-base current gain is denoted by alpha and is always less than one.

MJE13005 Equivalent

The following are the alternative to MJE13005:

• KSE13007
• MJE13007
• 2SC3795

It’s better the check out the pinout of alternatives before applying them to your electrical project as the pinout of the alternatives might differ from the pinout of MJE13005.

MJE13005 Power Ratings

The following table shows the absolute maximum ratings of MJE13005.

Absolute Maximum Ratings of MJE13005
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	400V
2	Collector-base voltage	700V
3	Base-emitter voltage	9V
4	Collector current	4A
5	Power dissipation	70W
6	Base current	2A
7	Operating and storage junction temperature range	-55 to 150C

The collector-emitter is 400V and the collector-base voltage is 700V. And total power dissipation is 70W which indicates the power released during the working of this device. The junction temperature and storage temperature ranges from -55 to 150C. Know that, don’t apply these ratings more than the required time, else they can affect device reliability. When you’re working with the component, make sure the ratings don’t increase from the absolute maximum ratings. Otherwise, they can badly damage the device, putting your entire project at risk.

MJE13005 Applications

MJE13005 is embedded in the following applications.

• Used in voltage regulator circuits.
• Used in H-bridge circuits.
• Incorporated in modern electronic circuits.

• Used in Bistable and Astable multivibrators circuit.
• Employed to support loads under 4A.
• Used for switching and amplification purpose.
• Installed in the motor control circuit.
• Employed in the switched-mode power supply.

MJE13005 Physical dimensions

The following figure represents the physical dimensions of the MJE13005 device. By checking out the physical dimensions of this component you can predict the space required for your circuit and install the device accordingly. That was all about the Introduction to MJE13005. If you have any questions, you can pop your comments in the section below, I’m ready and happy to assist you the best way I can. Feel free to share your valuable suggestions and feedback around the content we share so we keep generating quality content customized to your exact needs and requirements. Thank you for reading the post.