The Engineering Projects

1N5821 Schottky Diode Datasheet, Pinout, Features and Applications

Hi Friends! Happy to see you here. I welcome you on board. In this post today, I’ll walk you through the Introduction to 1n5821. The 1n5820 is a Schottky diode that carries high surge capability and low forward drop voltage. It helps in extremely fast switching and comes in the DO-201AD package. This diode is also known as a hot-carrier diode and is well-shielded against the overvoltage, keeping the device safe under desired ratings. I suggest you read this post all the way through as I’ll discuss the complete Introduction to 1n5821 covering the datasheet, features, pinout, features, and applications. Before further ado, let’s get started.

Introduction to 1N5821

• The 1n5820 is a Schottky diode that is capable of extremely fast switching and is made by the combination of metal and semiconductor material.
• In certain cases, where less power dissipation is required, MOSFETs replace these Schottky diodes.

• Schottky diode is also called hot-carrier diodes since they form the barrier in an unbiased condition, blocking the electrons that carry low energy. This barrier formation is the reason these diodes are also known as hot-carrier diodes.

• Schottky diode is slightly different than a regular diode. It is observed, both diodes are powered with a 2V DC source. Out of this 2V, the regular diode needs 0.7V and leaving 1.3V behind to provide power to the diode.
• And Schottky diode needs 0.3V out of this 2V DC supply source, leaving behind 1.7V to give power to the diode.

1N5821 Datasheet

While using this device in your project, make sure you go through the datasheet of the device that covers the main characteristics of the device. You can download the datasheet by clicking the link below.

1N5821 Pinout

The following image represents the pinout diagram of the device 1n5821.

• 1n5821 comes with two terminals known as anode and cathode. The cathode terminal is negative and is composed of semiconductor material while the anode terminal is positive and is made-up of metal.
• The current always enters through the anode terminal and it leaves the diode from the cathode terminal. Current moves from the anode to the cathode terminal.

1N5821 Features

• Highly efficient
• Comes with small conduction losses.
• Shielded against overvoltage.

• Exhibits low forward drop voltage.
• Extremely fast switching.
• Comes with high surge capability.
• Available in the DO-201AD package.

1n5821 Schottky Diode Construction

• Semiconductor material and metal are required to form the Schottky diode. When the n-type semiconductor is combined with metals like chromium, platinum, tungsten, and molybdenum, they constitute a Schottky diode.
• These diodes are incorporated in the solar systems that keep the batteries from discharging at night.
• It is observed both n-type and p-type semiconductors material can be employed in the construction of Schottky diodes, but n-type materials are more beneficial than p-type materials because later comes with low drop voltage.
• The semiconductor material and the metal used to form the Schottky diodes play a critical role in demonstrating the forward drop voltage of this device.

• Low forward drop voltage leads to less energy released, making this tiny device appropriate pick suitable for high-efficiency applications.

1N5821 Applications

• Used in high-frequency and fast switching applications.
• Embedded in low voltage inverters and sample-and-hold circuits.
• Control the electronic charge and can be used in polarity protection applications.
• Used in DC/DC converters and logic circuits.
• Incorporated in freewheeling and photovoltaic systems.
• Embedded in signal detection and radio frequency applications.

This is it. That’s all about the Introduction to 1n5821. Share your valuable suggestions in the comment section below, they help us generate quality content. If you have any query, you can approach me in the section below, I’ll try to help you according to the best of my expertise. Thank you for reading the article.

MUR460 Rectifiers Datasheet, Features, Equivalent and Applications

Hi Folks! I welcome you on board. Thank you for clicking this read. In this post today, I’ll detail the Introduction to MUR460. The MUR460 is a switch-mode rectifier used in inverters, switching power supplies, and as a freewheeling diode. Just stay with me for a little while as I’ll be discussing the complete introduction to MUR460 covering pinout, features, working, and applications of this component. Let’s get started.

Introduction to MUR460

• The MUR460 is a diode used as a rectifier in high frequency and freewheeling applications, in switching mode converters, and as an inverter in telecommunication.
• When this p-n junction diode is used as a rectifier it coverts AC signals to DC signals. The rectifier diode provides an alternating voltage that changes with respect to time.

• The p-n junction diode blocks current in reverse biased condition and allows the current to flow in forward biased condition only. Simply put, the p-n junction diode allows current to flow in one direction only and it blocks the current flowing in the opposite direction.
• MUR460 comes with a working peak reverse voltage and a maximum repetitive peak reverse voltage of 600V. The maximum average forward rectified current is 4A. And the operating junction temperature range is -65 to 175 C.

MUR460 Datasheet

Before you employ this component into your project, just go through the datasheet of the device that details the main characteristics of the component. Click the link below and download the datasheet of the component MUR460.

MUR460 Pinout

The following figure shows the pinout diagram of MUR460.

• This diode rectifier comes with two terminals called anode and cathode.
• The anode side is positive through which current enters the diode and the cathode side is negative through which current leaves the diode and current moves from the anode terminal to the cathode terminal.

 

MUR460 Working

• The working of this component is simple and straightforward. When the voltage is applied to the rectifier diode in such a way the negative terminal of the battery is attached with the n-type semiconductor and the positive terminal of the battery is connected to the p-type semiconductor material, in this condition the diode is forward biased.

• In this forward biased condition, the free electrons available in the n-type region of the semiconductor experience a repulsive force, and a large number of holes present in the p-type semiconductor also experience a repulsive force.

• In this case, the electrons due to this repulsive force start moving from the n-type region to the p-type region and the holes in the p-type region start moving to the n-type region.
• And the conduction is carried out due to these charge carriers i.e. holes in the p-region and the electrons in the n-region.
• As this conduction is the result of the movement of free majority charge carriers in the diode, the reason the current in the forward biased condition is also called the majority current.

MUR460 Features

The following are the features of this device MUR460.

• Operating Junction Temperature = 175°C
• Reverse Voltage = 600 V
• Available in Tape and Reel

• Carries low leakage current and low forward voltage
• Ultrafast recovery times i.e. 25 ns, 50 ns, and 75 ns
• High-temperature glass passivated junction

 

MUR460 Applications

• Used in high-frequency rectification
• Used in freewheeling applications
• Employed in switching mode converters
• Incorporated as an inverter in telecommunication

That was all about the Introduction to MUR460. If you’re unsure or have any questions, you can ask me in the comment section below. I’d love to help you the best way I can. Keep your valuable suggestions and feedback coming, they help us generate quality work customized to your exact needs and requirements. Thank you for reading this post.

1N5817 Schottky Diode Datasheet, Pinout, Features and Applications

Hi Guys! I welcome you on board. Glad to see you around. Thank you for clicking this read. In this post today, I’ll detail the Introduction to 1n5817. The 1n5817 is a Schottky diode used in extremely fast switching applications and carries high forward surge capability and low forward drop voltage. It is available in the DO-201AD package and can do high-frequency operations. Read this post till the end as I’ll discuss the complete introduction to 1n5817 covering the datasheet, pinout, features, and applications of this component. Let’s get started.

Introduction to 1N5817

• The 1n5817 is a Schottky diode, also known as a hot-carrier diode, used in extremely fast switching applications.
• It comes in the DO-201AD package and contains low forward drop voltage and high forward surge capability.

• In some applications, less power dissipation is required, in that case, MOSFETs are used in place of Schottky diodes.
• Schottky diode is also known as a hot-carrier diode due to the low electronic energy it exhibits in an unbiased condition.
• This low energy develops the barrier that blocks the movement of electrons. This formation of the barrier is the reason Schottky diodes are also known as hot-carrier diodes.

• Both Schottky diode and regular diode are the same in terms of current flow i.e. both allow current flow in one direction only and blocks it in the opposite direction.
• But these diodes are different when it comes to the voltage needed to turn on these diodes. Both diodes get 2V DC source voltage, but the Schottky diode needs only 0.3V, where 1.7V is left behind to power up the diode. And normal diode needs 0.7V, where 1.3V is left out to power up the diode.

1N5817 Datasheet

Before you incorporate this component into your electrical circuit, it’s better to have a look at the datasheet of the device that comes with the power ratings of the component helping you better understand the main characteristics of the device. If you want to download the datasheet of 1n5817, click the link given below.

1N5817 Pinout

The following figure represents the pinout diagram of the 1n5817 Schottky diode.

• This power diode comes with two terminals known as anode and cathode. Both terminals are used for the external connection with the electrical circuit.

• The anode side is positive and the cathode side is negative. The current enters the diode from the anode terminal and it leaves the diode from the cathode terminal.
• And current flows from the anode terminal to the cathode terminal. The diode only allows the current flow in one direction only i.e. from anode to cathode. It blocks the current flow from the cathode to the anode terminal.

1N5817 Features

• Exhibits small conduction losses.
• 1n5817 is highly efficient.
• Well protected against overvoltage.
• Used in extremely fast switching.
• Available in package DO-201AD.
• Contains high surge capability.

• Contains low forward drop voltage.

1n5817 Schottky Diode Construction

• The 1n5817 is constructed when the semiconductor material is mixed with the metal that creates the barrier.
• When the metals like chromium, platinum, tungsten, and molybdenum are combined with the n-type semiconductor material, it results in the formation of Schottky diode. The n-type semiconductor is the material where electrons operate as a major charge carriers and holes work as minority carriers.
• The Schottky diode contains two terminals called anode and cathode. The anode side is positive that is composed of metal material and the cathode side is negative that is made-up of semiconductor material. The current flows from the positive anode metal side to the cathode negative semiconductor side. Plus, the current enters the diode from the anode side and it leaves the diode from the cathode terminal.
• Both n-type and p-type semiconductor material can be used to work as a cathode terminal in Schottky diode, but n-type materials are preferred over p-type material because the later comes with low drop voltage.
• The forward drop voltage of the Schottky diode main depends on the nature of metal and semiconductor material used to form the barrier.

1N5817 Applications

• Incorporated in sample-and-hold circuits.
• Used in high-frequency and low voltage inverters.
• Employed in polarity protection and DC/DC converters applications.
• Used in freewheeling and logic circuits.
• Used for signal detection and extremely fast switching applications.
• Incorporated in solar systems.
• Used to control the electronic charge.
• Employed in radio frequency applications.

That was all about the Introduction to 1n5817. Hope you find this read helpful. If you’re unsure or have any question, you can pop your comment in the section below, I’ll help you the best way I can. Feel free to keep us updated with your valuable thoughts and suggestions, they help us generate quality content customized to your exact requirements. Thank you for reading this post.

LM2575 Buck Converter Datasheet, Pinout, Features, Applications

Hi Guys! Glad to see you around. I welcome you on board. In this post today, I’ll walk through the Introduction to LM2575. LM2575 is a step-down voltage regulator mainly used to step down the voltage. It is also known as a buck converter and is used to drive load under 1A. In the customized output version of the buck converter, you can set the output voltage as you like better. It comes with an extremely good load and line regulation and is available in fixed output voltages with 3.3V, 5V, and 12V. I suggest you read this post all the way through, as in this post I’ll detail the Introduction to LM2575 covering the datasheet, pinout, features, and applications of this component LM2575. Let’s get started.

Introduction to LM2575

• LM2575 is a voltage regulator and simplified version of switching power supplies that carry all functions required to step down the voltage in the circuit.
• This buck converter is incorporated with an integrated switch that can support load under 1A.

• LM2575 carries an excellent load line and load regulation. It comes in two versions: fixed output voltage version with voltage 3.3V, 5V, 12V, and adjustable output version that gives the ability to pick your desired output.
• It is also called the DC-to-DC power converter employed to step down the voltage from its input supply to its output load. The current increases during this voltage regulation.
• This regulator is integrated with a fixed-frequency oscillator of about 52 kHz and an in-built frequency compensation method.

• Frequency compensation is applied to reduce vibration and oscillation in the circuit. It can be obtained using resistance-capacitance networks.
• Apart from the remarkable load and line regulation, this device comes with a manual shutdown option through an external ON/OFF pin.
• Less external components are needed for this buck converter since it works at a fixed frequency of 52 kHz.

LM2575 Features

• Fixed versions with 3.3-V, 5-V, 12-V, and adjustable output versions
• Adjustable output version with voltage range: 1.2-V to 37-V ±4% maximum over load and line conditions
• Available in two packages named TO-263 and TO-220 packages.
• Can drive load under 1A.
• Comes with low power standby mode, commonly less than 200 µA.
• Uses easily available standard inductors and is highly efficient.
• 4.75 to 40 V is the input voltage range.
• 23V to 37V is the output voltage range.

• 80% efficiency.
• Excellent load and line regulations.
• Fixed internal oscillator frequency of 52 kHz.
• TTL shutdown capability.
• Protection against overcurrent and thermal shutdown.

LM2575 Pinout

LM2575 comes with five terminals. The following figure shows the pinout diagram of LM2575. ON/OFF = I = this terminal can shut down the voltage regulator circuit with input supply current decreasing to 50uA. Its working is simple and straightforward. When the voltage available on this pin is turned below the threshold voltage of 1.3V, it results in turning on the voltage regulator. And when the voltage is turned above the 1.3V, it results in turning off the voltage converter. You can remove this shutdown feature by connecting the pin to the ground or leaving it open. In both cases, the regulator will be turned ON. VIN = I = this is the 16 number input terminal attached with the input bypass capacitor to reduce voltage transients and to provide the switching current. Output = O = this is the 3 number pin that acts like an internal switch where voltage switches between (Vin – Vsat) and -0.5V. The duty cycle on this pin is Vout/Vin. The PCB copper area connected to this pin is mainly used to reduce the coupling. Ground = three pins number 5,12 & 13 are attached to the ground. Feedback = I = this is the 7 number pin that indicates the regulated output voltage for the feedback loop.

LM2575 Datasheet

Before you install this component into your project, it’s wise to scan through the datasheet that covers the main characteristics of the component. Click the link below and download the datasheet of LM2575.

LM2575 Applications

LM2575 is used in the following applications.

• Used in a simple efficient step-down regulator.
• Used as a pre-regulator in linear regulator
• Used to drive load under 1A.
• Incorporated in On-card switching regulators.
• Employed in a positive-to-negative converter.

That was all about the Introduction to LM2575. Hope you find this post helpful. If you have any query, you can approach me in the section below, I’d love to help you the best way I can. Feel free to keep us updated with your valuable feedback and suggestions, they help us produce quality content customized to your exact needs and requirements. Thank you for reading the article.

Introduction to TIP42

Hi Guys! Thank you for clicking this read. Hope this finds you well. In this post today, I’ll document the Introduction to Tip42. Tip42 is a medium power silicon transistor mainly used for switching and amplification purpose. It belongs to the PNP transistor family and comes in the TO-220 package. The collector current is 6A which signals it can support load under 6A. Both collector-base and the collector-emitter voltages are 40V. And the only 5V is required to initiate the transistor action as the emitter-base voltage is 5V. The power dissipation is 65W which defines the amount of energy released during the working of this transistor. The storage junction temperature is -65 to 150C and transition frequency is 3MHz. Just stay with me for 2-min as I’ll be discussing the main features, pinout, datasheet, and applications of the device Tip42. Let’s jump right in.

Introduction to TIP42

• • Tip42 is an epitaxial medium power silicon transistor mainly used for switching and amplification purpose. It falls under the category of PNP transistor and comes with current gain ranging from 15 to 75.
  • This current gain demonstrates the capacity of transistor it can amplify the current. It’s a ratio between the output current and input current.
  • Tip42 is a bipolar transistor which means two charge carriers are used in the conductivity process inside the transistor.
  • Both electrons and holes take part in the conductivity process. And in this case of PNP transistor, holes are majority carriers. And electrons are minority carriers in the case of NPN transistors.

• This PNP transistor contains three terminals called the emitter, base, and collector. All these terminals carry different functionality and different doping concentration.

• This different doping concentration is the main reason this bipolar transistor is not symmetrical. The external circuit is connected with the transistor through these terminals.
• Tip42 is composed of two p-doped layers and one n-doped layer. The n-doped layer is sandwiched between the two p-doped layers. The two p-layers represent the collector and emitter terminals and the n-layer represents the base terminal. The N sign shows, a negative voltage is applied on the base terminal to trigger and start the transistor action.
• This bipolar transistor controls the small input current and produces the large output current, the reason these devices are called current-controlled devices because two charge carriers are used for conductivity in contrast to FETs(field effect transistor) which is unipolar voltage-controlled devices. Where conductivity is carried out with only one charge carrier.

 

TIP42 Features

The following are the main features of transistor BC538.

• Package: TO-220
• Material: Silicon
• Type – PNP
• Emitter-Base Voltage: 5 V
• Collector-Base Voltage: 40 V
• Collector-Emitter Voltage: 40 V
• Collector Dissipation: 65 W
• Collector Current: 6 A
• Transition Frequency: 3 MHz
• Current Gain (hfe): 15 to 75
• Storage Junction Temperature: -65 to +150 °C

  These are the main features and absolute maximum ratings of the device Tip42. Make sure you don’t apply these ratings for more than the required time, otherwise it will harm your device reliability.

• Plus, make sure your ratings don’t exceed these absolute maximum ratings while you’re working with the device, otherwise they will badly damage the device and thus the entire project.

• Both collector-emitter and collector-base voltages are 40V while the emitter-base voltage is 5V which projects you need to apply 5V to initiate the transistor action.
• The Collector current is 6V which indicates this transistor can support load under 6A. The transition frequency is 3MHz and power dissipation is 65W which is the amount of energy released during the working of this transistor.

• DC common-emitter current gain ranges from 15 to 75. It is a ratio between collector current and base current. This describes the capacity of transistors it can amplify the current. This is a relation between output amplified current to input small current.
• Another important current gain is the common-base current gain which is a ratio between collector current and emitter current and its value is always less than one. Normally ranges from 0.5 to 0.95.
• The small current at one pair of terminals is used to produce large current across other pairs of terminals of the transistor and this process is used for amplification purposes.
• It is important to note that the PNP transistors are less likely to employ for amplification purposes than NPN transistors. Because the mobility of electrons in the NPN transistor is far better and quicker than the mobility of holes in PNP transistors.

 

TIP42 Pinout

The Tip42 consists of three main terminals called: 1: Base 2: Collector 3: Emitter The following figure shows the pinout diagram of Tip42.

• The collector terminal is lightly doped and the emitter terminal is highly doped in contrast to the other two terminals.
• The collector terminal is 10-times lightly doped than the base terminal. And this transistor is manufactured in such a way, the collector side covers the entire emitter terminal area.
• The base terminal is responsible for the entire transistor action.
• This base terminal acts like a control valve that controls the number of holes in the case of the PNP transistor and the number of electrons in the case of NPN transistor.

• When 5V is applied at the base terminal, it gets biased and starts the transistor action where current moves from emitter to collector terminal which is the opposite in the case of NPN transistors where current moves from collector to emitter terminal. And in both cases base terminal controls the amount of current passing through it.

TIP42 Datasheet

Before you apply this device into your project, scan through the datasheet of the component that helps you get a hold of the main characteristics of the device. You can download the datasheet of Tip42 by clicking the link below.

TIP42 Applications

Tip42 is used in the following applications.

• Used for switching and amplification purpose.
• Used to drive load under 6A.
• Incorporated in the motor control circuit
• Employed in H-bridge circuit
• Incorporated in the voltage regulator circuit

That’s all for today. I hope you’ve got a clear insight into the Introduction to Tip42. If you’re unsure or have any question, you can pop your question in the comment section below, I’d love to assist you the best way I can. Keep your suggestions and feedback coming, they help us create quality content customized to your exact needs and requirements. Thank you for reading the article.

Introduction to TIP42C

Hi Friends! I welcome you on board. Happy to see you around. In this post, I’ll detail the Introduction to Tip42c. Tip42c is a medium power transistor mainly used for amplification and switching purpose. It is made up of silicon material and falls under the category of PNP transistors. The voltage across collector and emitter terminals is 100V and the voltage across base and collector terminals is 100V. The 5V is the voltage across base and emitter terminals which projects the value of voltage required to bias this transistor. The 6A is collector current which indicates the value of loads this transistor can support. Just bear with me for a little while as I’ll be documenting the main features, pinout, applications, and datasheet of this tiny component Tip42c.

Introduction to TIP42C

• Tip42c is a PNP medium power bipolar transistor mainly used for switching and amplification purpose.
• It is composed of silicon material and comes in the TO-220 package.

• It comes with three pins called the emitter, base, and collector. These pins are also known as transistor terminals that are connected with the external electrical circuit.
• The small input current across one pair of terminals is used to generate large output current across other pairs of terminals.
• Tip42c contains three layers where two are p-doped silicon layers and one is an n-doped silicon layer. The n-doped layer represents the base terminal where negative voltage is applied to start the transistor action. The two p-doped layers surround the n-doped layer.

• As this bipolar transistor controls the small current to produce large current, the reason bipolar transistors are considered as a current-controlled device in contrast to FETs(field effect transistor) which is a unipolar transistor (conductivity happens due to one charge carrier) that are voltage-controlled devices.
• Two current-gains are important while studying bipolar transistors. One is a common-emitter current gain which ranges from 15 to 75 in this case and common-base current gain which is a ratio between collector current to emitter current, this is normally called alpha.

Its value is always less than 1, commonly lies from 0.90 to 0.95 but more often than not its value is taken as unity.  

TIP42C Features

The following are the main features of device Tip42c

• Name: TIP42C
• Package: TO220
• Material used: Silicon
• Type: PNP
• Power Dissipation: 65 W
• Collector-Base Voltage = Vcb: 100 V
• Collector-Emitter Voltage = Vce: 100 V
• Emitter-Base Voltage = Veb: 5 V
• Collector Current = Ic : 6 A
• Operating Junction Temperature = Ti:  -65 to 150 °C
• Transition Frequency = ft: 3 MHz
• Common-emitter current gain = hfe: 15 to 75

These are the main features and the power ratings of the transistor Tip42c. Don't apply these ratings for more than the desired time, else they will influence the device reliability.

• The Tip42c is a bipolar transistor which means two charge carriers are used for the conduction process inside the transistor. Both electrons and holes are used for the conductivity, however, holes are the majority carriers and electrons are the minority carriers. Which is the opposite in the case of NPN transistor where electrons are the majority carriers and holes are minority carriers.
• This PNP transistor comes in TO-220 package with collector current 6A which demonstrates it can support the loads under 6A.

• The junction temperature ranges from -65 to 150C and the transition frequency is 3MHz which is a measure of the transistor’s high frequency operating characteristics. It is denoted by ft.
• The common-emitter current gain stands from 15 to 75 which is the capacity of the transistor it can amplify the small input current. It is called beta and is a ratio between output collector current to input base current.

• And the only 5V is required to start the transistor action because 5V is the voltage across emitter and base terminals.
• It is important to note that this PNP transistor is not preferred over its counterpart NPN transistor because the mobility of electrons in the NPN transistors is quicker and better than the mobility of holes inside the PNP transistor.
• Moreover, in NPN transistors the current flows from the collector side to the emitter side in contrast to PNP transistors where current moves from the emitter side to the collector side.
• The 65W is the power dissipation that indicates the energy released when this transistor starts working in the electrical circuit. This varies from transistor to transistor.

TIP42C Pinout

The Tip42c contains three terminals named: 1: Base 2: Collector 3: Emitter The following diagram shows the pinout of the transistor Tip42c.

• All these terminals carry different doping concentrations and different working ability. The emitter side is more doped compared to the other two terminals and the collector side is lightly doped. The base side is 10-times more doped than the collector terminals.
• This bipolar transistor is not symmetrical. This absence of symmetry is due to the different doping concentration of the emitter and collector terminals.
• In bipolar transistors, the base terminal is responsible for the entire transistor action. When voltage is applied at the base terminal, it gets biased and starts controlling the number of holes in this case of PNP transistors and the number of electrons in the case of NPN transistors.

• This base terminal acts like a control valve that controls the amount of current. The emitter terminal is highly doped and contains the entire current of the transistor. The emitter current is equal to the sum of the collector current and base current.

 

TIP42C Datasheet

When you’re working with tiny devices like Tip42c, it is wise to scan through the datasheet of the component that documents the main characteristics of the transistor. Click the link below and download the datasheet of Tip42c.

TIP42C Applications

The Tips42c is used in the following applications.

• Used for switching and amplification applications
• Used in motor control drivers
• Employed in H-bridge circuits
• Incorporated in voltage regulator circuits
• Used to drive loads under 6A

That’s all for today. I hope you find this article helpful. If you’re unsure or have any question, you can pop your query in the section below, I’d love to help you the best way I can. Feel free to leave your valuable suggestions and feedback, they assist us to generate quality content customized to your exact requirements. Thank you for reading the article.

Introduction to C1815

Hello friends, I hope you all are doing great. In today's tutorial, we are gonna have a look at detailed Introduction to C1815. The C1815 is a transistor like other it is used to amplify acoustic frequency signal. Most transistors are coded for easy documentation through these titles can differ by builders. One or two erudition are typically trailed by a sequence of statistics, and then probably additional statistics. Consequently, a C1815 transistor can also be recognized as a 2SC1815 transistor. It is used as a switch to initiative loads below 150mA. The use of transistors aided the electronics manufacturing alteration quickly, and developments in expertise are permitting minor apparatuses to be used to production of slighter expedients. In today’s post, we will have a look at its shield, wreckages, implication, proposals, etc. I will also share some links where I have connected it with other microcontrollers. You can also get more material about it in comments, I will guide you more about it. So, let’s get started with a basic Introduction to C1815. 

Introduction to C1815

• The C1815 is a transistor like other it is used to amplify acoustic frequency signal. It is used as a switch to initiative loads below 150mA.
• It is manufactured from semiconductors constituents such as Silicon, Germanium, etc, it has three pinouts sometime extra.

• It is used for swapping and strengthening of numerous signals. Additional statistics can also be found only from the part digits.

• The '2S' ratio of the integer designates that the C1815 transistor is decent for high-frequency solicitations and is in Negative-Positive-Negative arrangement.

• The first negative terminal of the transistor is associated with the negative sideways of a circuit, and monitor the movement of electrons to the positive area in the intermediate.

• The second negative terminal of the transistor governs the electrons sendoff the positive, central area.

• The semiconductor component that is used to develop the transistor decide that the transistor have NPN or PNP pattern.
• Three leads on this transistor recognized the emitter, base, and collector. An emitter is a yield, the base is similar to the doorway which switches the input of the collector.
• For instance, while a C1815 transistor is used in an audiovisual solicitation, the emitter directs the audiovisual output signal. This is managed by the base, which can be a squat audiovisual signal, and motorized by the collector, which might be a 5-volt power source.
• By fluctuating the quantity of current at the base terminal of a transistor, the extent of power moving from the collector to the emitter can be organized.
• For illustration, in numerical circuits, a transistor is on condition when it accepts 5-volts, and off when it takes fewer than that quantity.
• Overall evaluations for a C1815 transistor comprise a power indulgence of 0.4 watts at an ambient temperature of 77° Fahrenheit (25° Celsius). The transistor consumes collector current of 0.15 amps. Quantity of voltage amid collector and base is 60 volts.

Pinout of C1815

• These are pinout of C1815.

  Pin#	Type	Parameters
  Pin#1	Emitter	This pin is for the outward movement of current.
  Pin#2	Base	The base governs the biasing of the transistor.
  Pin#3	Collector	The collector is for the current inner drive. It is associated with the load.

  Lest see a diagram of the pinout.

Features of C1815

• These are some features of C1815.
  • It is offered in cascading of TO-92.
  • It is like an NPN transistor.
  • The quantity of current across collector (Ic) is 150mA.
  • The value of voltage across the collector to the emitter(V_CE) is 50V.
  • The quantity of voltage crossways its emitter and base (V_EB) is 5V.
  • Voltage crosswise collector and base (V_CB) is 60V.
  • Intemperance power crossways collector is 400mW.
  • Its frequency conversion is 80MHZ.
  • It lowermost current gain is 70 and extreme is 700.
  • Its extreme stowage and the employed temperature is -55 to +150 C.

Where we can use C1815

• As it is C1815 transistor it can be used in acoustic intensifications phases, trivial acoustic amplifier, pre-amplifier and also in pre-amplifier phases.
• It works as a switch in electronic circuits to run loads of 150mA such as to run relay, high power consuming transistors, LEDs and other industrial electronic circuits.
• It works as a switch in electronic circuits to run loads of 150mA such as to run relay, high power consuming transistors, LEDs and other industrial electronic circuits.
• We can use it to construct a Darlington pair.

Applications of C1815 

• These are applications of C1815.
  • It is used in such instruments which use Sensor Circuits
  • It is used in Auditory Pre-amplifiers.
  • It is used in different audio Amplifier Phases.
  • It works as a switch for such circuits which use 150mA current.
  • It used in RF Circuits.

 So it was all about C1815 if you have any question about it ask in comments. I will explain to you further about it. Thanks for reading.

2SB772 Transistor Pinout, Features, Datasheet & Applications

Hello everyone! I welcome you on board. Hope you’re well. In this post today, I’ll detail the Introduction to 2sb772. 2sb772 is a PNP transistor that comes in the TO-126 package. It is mainly used for amplification and switching purposes. This is a bipolar junction transistor which means the conductivity is carried out by two charge carriers i.e. holes and electrons. And it comprises of two junctions where the base-emitter junction is forward biased and the base-collector junction is reverse biased in forward active mode. In this post, I’ll be discussing the working principle, pinout, datasheet, physical dimensions, power ratings, and applications of the device 2sb772. Let’s get started.

Introduction to 2SB772

• The 2sb772 is a medium power PNP bipolar junction transistor mainly employed for switching and amplification purpose.
• It comes with three main terminals called the emitter, collector, and base. All these terminals come with different functionality and different doping concentrations.
• The emitter side is highly doped in contrast to the other two terminals and the collector is lightly doped. The base terminal is 10-times highly doped compared to the collector terminal.
• 2sb772 is a semiconductor device made up of silicon material and it consists of three layers. Where one is an n-doped layer that stands between two p-doped layers.

• The n-layer signals the base terminal and indicates that negative voltage supply is required to bias the base terminal and start the overall transistor action.
• As this is a bipolar transistor, both electrons and holes play a vital role in the conductivity process.

• And holes are majority carriers while electrons are minority carriers in this case in contrast to NPN transistors where electrons are major carriers and holes are minority carriers.
• The bipolar transistors like this 2sb772 are the building blocks of modern electronics.
• In some cases, however, the vacuum tubes are preferred over bipolar transistors since the mobility of charge carriers is far better in vacuum tubes which is suitable for high-power high-frequency applications like on-air television broadcasting.

2SB772 Datasheet

Before installing this component into your project, have a quick look at the datasheet that helps you get a hold of the main characteristics of the device. Click the link below and download the datasheet of 2sb772.

2SB772 Pinout

The 2sb772 carries three main terminals known as 1: Emitter 2: Collector 3: Base The following figure shows the pinout diagram of the 2sb772 transistor.

• All these terminals are used for the external connection with the circuit. The emitter side carries the overall transistor current.
• And in this PNP transistor current flows from the emitter to the collector terminal due to the movement of major charge carriers i.e. holes.
• While the current flows from the collector to the emitter terminal in the case of NPN transistors due to the mobility of electrons.

2SB772 Working Principle

• The working principle of this transistor is simple and quite similar to NPN transistors. In both NPN and PNP transistors, the base pin is mainly responsible for the overall transistor action.
• And when a positive voltage is applied at the base terminal it gets biased and current flows due to the movement of holes.

• When there is no current available at the base terminal, the transistor is turned ON and in that case, both collector and emitter pins are forward biased.

• And when there’s current present at the base terminal, the device is turned OFF and both emitter and collector terminals are reverse biased.
• Unlike other transistors, bipolar transistors are not symmetrical. Different doping concentrations of both emitter and collector sides are responsible for the lack of symmetry inside bipolar junction transistors.
• Moreover, if we exchange the collector and emitter terminals, the common-emitter gain and common-current values will be less than they are normally observed.
• The common-emitter current gain is called beta and is also known as the amplification factor. In this case, the amplification factor stretches from 30 to 300. This factor determines the amount of input current this transistor can amplify.

2SB772 Power Ratings

The following table shows the absolute maximum ratings of 2sb772.

Absolute Maximum Ratings BC639
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	30	V
2	Collector-Base Voltage	Vcb	60	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	3	A
5	Current Gain	hfe	30 to 300
6	Power Dissipation	Ptot	12.5	W
7	Storage Temperature	Tstg	-65 to 150	C

• The collector-base voltage is 60V while the collector-emitter voltage is 30V. And the emitter-base voltage is 5V which means it requires a total 5V to start the transistor action and bias this device.
• The power dissipation is 12.5W which determines the amount of energy this device releases during the working of this component. Storage temperature lies from -65 to 150 C and the junction temperature is 150C.
• While working with this device make sure your ratings don’t exceed these absolute maximum ratings, else you’ll risk the component and thus the entire circuit.

• Also, if you apply these ratings for more than the required time, they will affect device reliability.

2SB772 Alternatives

The following are the alternative to 2sb772.

• BD186
• KSB772
• BD132
• BD188
• MJE232
• BD190
• MJE235
• KSH772

Before you incorporate these alternatives into your circuit, double-check the pinout of the alternatives, as it's quite likely the pinout of the alternatives doesn't exactly match with the pinout of the 2sb772. The complementary NPN transistor to 2sb772 is 2sd882.

2SB772 Applications

This device is used in the following applications.

• Used for amplification and switching purposes.
• Incorporated in H-bridge circuits.
• Employed in relay drivers.
• Incorporated in the motor control circuit.
• Used in voltage regulator circuits.
• Used in Astable and Bistable multivibrators.
• Used to support loads under 3A.

2SB772 Physical dimensions

The following diagram shows the physical dimensions of transistor 2sb772. These dimensions will help you identify the total space required for the entire project. That’s all for today. Hope you find this article helpful. If you are unsure or have any query you can pop your comment in the section below, I’d love to help you the best way I can. You’re most welcome to share your feedback and suggestions, they help us produce quality content customized to your exact requirements. Thanks for reading this post.

TIP41C Transistor Pinout, Features, Datasheet & Applications

Hi Friends! Welcome you on board. Happy to see you around. In this post today, I’ll walk you through the Introduction to Tip41c. Tip41c is an NPN transistor that comes in the TO-220 package and is mainly used for amplification and switching purposes. It’s a high switching speed device with improved current gain and a high collector current around 6A that indicates the value of load this device can support. Both collector-base and collector-emitter voltages are 100V (higher than other bipolar transistors) and the emitter-base voltage is 5V which shows the only 5V is required to bias this component. Just stay with me for a little while as I’m going to detail the pinout, datasheet, applications, power ratings, working principle, and physical dimensions of this tiny device. Let’s jump right in.

Introduction to TIP41C

• Tip41C is an electronic tiny device mainly used for switching and amplification purpose. It belongs to the category of NPN transistor and comes with high power around 65W, which is the amount of energy released during the working of this transistor.
• This NPN transistor comes with three pins, also known as terminals, called the emitter, collector, and base.
• The small input current across one pair of terminals is used to produce a large current across other pairs of terminals. This process is used for amplification purposes.

• Tip41c is composed of three layers. One is a p-doped layer and the other two are n-doped layers that are made up of semiconductors (silicon material).
• The p-doped layer sits between the two n-doped layers. And the p-doped layer is the base terminal and the P sign shows positive voltage is applied at the base terminal to start the transistor action.
• This device is composed of two junctions. One is the base-emitter junction that is forward biased and the base-collector junction that is reverse biased in forward active mode.

• The collector current is 6A which is much higher than other bipolar transistors available in the market. This current defines the amount of load this device can support.
• And common-emitter current gain stretches from 15 to 75 which is the capacity of the transistor it can amplify the input current. It is a ratio between collector current and base current.
• The transistor frequency is 3MHz which demonstrates how the current gain of the transistor is influenced by the input frequency.
• This device controls the low input current and produces high output current, the reason this device is called a current-controlled device.
• This is a bipolar transistor which means two charge carriers are used for the conductivity process i.e. electrons and holes. The electrons are major carriers in NPN transistors and holes are major carriers in PNP transistors.

 

TIP41C Datasheet

Datasheet of any component documents the characteristic and performance of the device through which you understand what the product is about and its power ratings. Click the link below to download the datasheet of Tip41c.

TIP41C Pinout

The Tip41c comes with three terminals named: 1: Base 2: Collector 3: Emitter The following figure shows the pinout diagram of Tip41c.

• This device is manufactured in such a way, the collector side covers the entire emitter area, making electrons difficult to escape without being collected by the collector terminal.
• All these pins come with different doping concentrations. The collector side is lightly doped and the emitter side is more doped compared to both base and emitter pin.
• The collector pin is 10-times lightly doped compared to the base terminal. These pins are used for external connections with the electrical circuit.

TIP41C Working Principle

• No matter the bipolar transistor you pick, the base pin is responsible for the transistor action in every bipolar transistor. When a positive voltage is applied at the base pin, it gets biased, initiating the transistor action.
• And the current starts flowing from the collector to the emitter terminal in contrast to the PNP transistor where current flows from emitter to collector terminal.
• The base pin works like a control valve that controls the number of electrons in this NPN transistor and the number of holes in the PNP transistor.
• The bipolar transistors are not symmetrical. The lack of symmetry is caused by different doping concentrations of collector and emitter terminals.

• The two most common current gains are used to demonstrate the nature and current amplification capability… one is a common-emitter gain that 10 to 75 in this case which is a ratio between the collector and base current.

• It’s is also known as the amplification factor. This factor signals the capacity of transistors it can amplify the small input current. This factor is called beta.
• Another important factor is a common-base current gain which is a ratio between collector and emitter current. The value of this gain is always less than 1. Most likely stretches from 0.5 to 0.95.

TIP41C Power Ratings

The table below shows the absolute maximum ratings of Tip41c.

Absolute Maximum Ratings of Tip41C
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	100	V
2	Collector-Base Voltage	Vcb	100	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	6	A
5	Current Gain	hfe	15 to 75
6	Power Dissipation	Ptot	65	W
7	Storage Temperature	Tstg	-65 to 150	C

• You can see from the table, collector-base and collector-emitter voltages are 100V and the emitter-base voltage is 5V which means it requires 5V to start the transistor action.

• Total power dissipation is 65W and common-emitter current gain lies from 15 to 75 that defines the capacity of transistor it can amplify the input current. The transition frequency is 3MHz and the storage temperature stands from -65 to 150C.

TIP41C Alternatives

The following are the alternatives to Tip41c.

• MJE5180
• 2SD1895
• MJE5181
• BC911
• BD711

Cross-check the pinout of alternatives before you incorporate them into your project. It’s likely the pinout of the alternatives doesn’t exactly match with the Tip41c pinout. To remain on the safe side and to avoid any hassle later, double-check the pinout of the alternatives. The complementary PNP transistor to Tip41c is Tip42c.

TIP41C Applications

This NPN transistor is used in the following applications.

• Used for amplification and switching purposes.
• Used to drive load under 6A.
• Incorporated to drive DC motors.
• Used in Darlington pairs.
• Employed for signal amplification and audio amplification.

 

TIP41C Physical dimensions

The following diagram shows the physical dimensions of Tip41c. That’s all for today. I hope you find this article helpful. If you have any question, you can pop your comment in the section below, I’d love to help you the best way I can. You’re most welcome to share your feedback and suggestions, they help us curate content tailored to your exact needs and requirements. Thanks for reading the article.

B772 Transistor Pinout, Features, Datasheet & Applications

Hi Guys! Hope you’re well today. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to B772. B772 is a medium power bipolar junction transistor mainly used for switching and amplification purpose and belongs to the PNP transistor family. It comes in the TO-126 package and carries a collector current of 3A which means it can support load under 3A. The 60V is the collector-base voltage and 30V is the collector-emitter voltage while 5V is the emitter-base voltage which means it requires 5V to bias the transistor and start transistor action. In this post, I’ll be discussing pinout, datasheet, working principle, power ratings, physical dimensions, and applications of B772. Let’s get started.

Introduction to B772

• B772 is a bipolar junction transistor that falls under the category of PNP transistors.
• It contains three pins called the emitter, collector, and base terminals. During the amplification process in the circuit, the small input current present at the base terminal is used to produce large output current at the remaining terminals.
• This PNP transistor is made up of silicon material and comes in the TO-126 package.
• B772 comes with three layers where two are p-doped layers and one is n-doped. The n-doped layer stands between two p-doped layers.

• The two n-doped layers represent collector and emitter and one n-doped layer represents the base terminal and indicates the base terminal requires a negative voltage supply to start the transistor action.
• You know it already, both electrons and holes play a crucial role in the conductivity process inside the transistor, in the case of PNP transistor holes are majority carriers and electrons are minority carriers in the case of NPN transistors.

• In comparison, NPN transistors are preferred over PNP transistors because the mobility of electrons is better than the movement of holes in the PNP transistor. In rare cases, both PNP and its complementary NPN transistors are incorporated inside a single circuit.
• This device is produced using planer technology that generates rugged high-performance components.

 

B772 Datasheet

The datasheet of any component exhibits the main characteristics of the device. It will help you get a hold of the current and voltage required for the emitter, collector, and base terminals. Click below to download the datasheet of B772.

B772 Pinout

B772 carries three main terminals that are known as: 1: Emitter 2: Collector 3: Base The following figure shows the pinout diagram of B772.

• These terminals are used for the external connection with the electronic circuit. All these pins exhibit different doping concentrations and different functionality.
• The emitter side is more doped compared to other terminals. Moreover, the emitter terminal contains the entire current of the transistor i.e. Ie = Ic + Ib

B772 Working Principle

• B772 is a low saturation voltage and high current device where the base terminal is responsible for the overall transistor action.
• The emitter and collector side is reverse biased when there is current present at the base terminal and in that case, the device is considered turned OFF.

• And when there is no current at the base side, both collector and emitter are forward biased and the transistor is turned ON.

• Recall, this is a PNP transistor, here the n-doped layer represents the base side that is negative. The negative voltage supply is applied at the base side to start the transistor working process.

B772 Power Ratings

The following table shows the absolute maximum ratings of the device B772.

Absolute Maximum Ratings B772
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	30	V
2	Collector-Base Voltage	Vcb	60	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	3	A
5	Current Gain	hfe	30 to 300
6	Power Dissipation	Ptot	12.5	W
7	Storage Temperature	Tstg	-65 to 150	C

• You can see from the table, the 60V is the collector-base voltage and 30V is the voltage between collector and emitter. While the voltage between emitter and base is 5V.
• Total power dissipation is 12.5W which signals the amount of energy released during the working of this transistor.
• Junction temperature is 150C and storage temperature stands between 65 to 150C
• These are called stress ratings. When you incorporate this device into your project, make sure ratings don’t surpass the absolute maximum ratings.
• If they exceed the required ratings, it will damage the device and thus the entire project.

 

Difference between PNP and NPN transistors

• Both NPN and PNP are bipolar junction transistors and work similarly with a few exceptions. The current directions and voltage polarities are reversed.
• In the case of PNP transistor, the conductivity is carried out from the emitter to the collector side while in the case of NPN transistor the conductivity process is carried out from the collector to the emitter side.

• Moreover, the holes are majority carriers in the case of PNP transistors and minority carriers in the case of NPN transistors. While electrons are majority carriers in NPN transistors and minority carriers in the case of PNP transistors.

• And negative voltage is applied at the base pin in the PNP transistor and a positive voltage is applied at the base terminal in the case of NPN transistor.

B772 Alternatives

The following are the alternative to B772.

• BD186
• BD132
• KSB772
• BD188
• BD190
• MJE232
• KSH772
• MJE235

While working with the alternatives, cross-check the pinout of the alternatives, as it likely the pinout of the B772 might differ from the pinout of the alternatives. The complementary NPN transistor to D772 is D882.

B772 Applications

• Used for medium-power switching and amplification applications.
• Used in the motor control circuit.
• Incorporated in relay drivers.
• Incorporated in voltage regulator circuits.
• Used to drive loads under 3A.
• Employed in Astable and Bistable multivibrators.
• Employed in H-bridge circuits.

   

B772 Physical dimensions

The following figure exhibits the physical dimensions of the component that help you identify and evaluate the total space required for the circuit. That’s all for today. Hope you find this article useful. If you have any query, you can pop your question in the section below, I’d love to help you the best way I can. Feel free to share your valuable suggestions and feedback in the comment section, they help us to customize our content based on your exact needs and requirements. Thanks for reading the article.