The Engineering Projects

Introduction to 2n5088

Hi Friends! We always feel happy when you come over to watch useful information that resonates with your needs and expectations. I am back to give you a daily dose of information so you can excel and grow in your relevant field. Today, I am going to unlock the details on the Introduction to 2n5088. It is an NPN (negative-positive-negative) bipolar junction silicon transistor which is specially designed for small signal, high speed, general purpose switching applications. I'll discuss each and everything related to this transistor so you don't need to go anywhere and find all information in one place. Let's hop on the board and explore what is it about and what are its main applications?

Introduction to 2n5088

• 2n5088  is an NPN bipolar junction transistor which comes in a TO-92 package and mostly used for small signal general purpose switching applications.
• This transistor comes with three terminals named as an emitter, base, and collector.
• 2n5088 is a bipolar current controlled device, unlike MOSFET which is a unipolar voltage controlled device. When a voltage is applied at the base terminals, it gets biased and draws current which is used to control large current at the emitter and collector side.
• Emitter, base, and collector are different in terms of their shape and doping concentrations. An emitter is highly doped as compared to both base and collector.

• Conduction is carried our between emitter and collector when a small voltage is applied at the base terminals. The emitter emits the electrons which are then collected by the collector. The base is used to control the number of electrons.
• In this NPN transistor, a base is positive with respect to emitter and voltage at the collector side is greater than the voltage at the base side.
• The ability of the base to control the number of electrons is used for amplification purpose.
• Movement of electrons plays an important role in the nature of conduction in any transistor. It is a bipolar junction transistor where conduction is carried out by both charge carriers i.e holes and electrons but majority charge carriers are electrons because it is an NPN transistor.

2n5088 Pinout

2n5088 is an NPN transistor which is mainly composed of three terminals.   1. Emitter 2. Base. 3. Collector

• Free movement of electron actually acts like a bridge between emitter and collector.
• Electron reaction gets triggered when a voltage is applied at the base terminal which then controls the large current at the emitter and collector side.

Circuit Diagram of 2n5088

The circuit symbol of 2n5088 is shown in the figure below.

• Diodes are the building blocks of the transistor when they are joined back to back.
• This NPN transistor comes with a positive base side and negative emitter side where the voltage at the base side is less than the voltage at the collector side.
• It can be configured to three main configurations named as common emitter configuration, common collector configuration, and common base configuration. Out of these configurations, common emitter configuration is mainly helpful for amplification purpose because it features the same voltage gain and power required for amplification purpose.
• Forward current gain is an important factor, also known as amplification factor which determines the measure of current being amplified.
• It is called beta, denoted by ß, and is a ratio between collector current and base current.
• Beta value ranges between 20 to 1000 but most the time standard value of beta is taken as 200. As it is a ratio between two currents so it has no unit.
• Current gain is another important factor which is a ratio between collector and emitter current. It is called alpha and denoted by a.
• The alpha value ranges between 0.95 to 0.99 and most of the time alpha value is taken as unity.
• These current gains are different in PNP transistor.

Absolute Maximum Ratings

Following figure shows the absolute maximum ratings of 2n5088.

• Collector-Emitter voltage and Collector-Base voltage is 30 and 35 respectively.
• Maximum power it can draw is 1.5 W.
• These are the stress ratings. If absolute maximum ratings are exceeded from these stress ratings, they can severely affect the device quality.
• Similarly, if stresses are applied for an extended period of time, they can badly influence the device reliability.

Applications

• This NPN transistor is mainly used for switching and amplification purpose.
• It comes in a TO-92 package for medium power applications.

That's all for today. I hope you have found this article useful. We always love when you keep coming back for what we have to offer. Feel free to keep us updated with your feedback and suggestions, they allow us to give you quality work that meets your needs and expectation. If you have any question you can ask me in the comment section below. I'd love to help you according to best of my expertise. Stay Tuned!

Introduction to 2n3773

Hey Fellas! We welcome you on board. I am back to give you a daily dose of useful information that resonates with your needs and expectations and put you ahead from others. Today, I am going to uncover the details on the Introduction to 2n3773. It is an NPN (negative-positive-negative) power base bipolar junction transistor which is mainly used for disk head positioners, high power audio, and other linear applications. I'll try cover each and every feature related to this transistor so you don't need to go anywhere and you find all information in one place. Let's jump in and explore what is it about and what are its main applications?

Introduction to 2n3773

• 2n3773 is an NPN power base bipolar transistor which is mainly designed for disk head positioners, high power audio, and other linear applications.
• Power switching circuits such as relays, DC-DC converters, and solenoid drivers also use this power transistor because it exhibits high switching performance.
• 2n3773 mainly consists of three terminals named as an emitter, base, and collector.
• It is completely characterized for linear operation and features high DC current gain and low saturation voltage.

• It is a current controlled device where small current at the base side is used to control large current at the emitter and collector side.
• When a voltage is applied at the base side, it gets biased and emitter emits the electrons which are then collected by the collectors.
• The base is used to control the number of electrons.
• Free movement of electrons between the terminals acts like a bridge that connects two terminals.
• Base side is lightly doped while emitter side is heavily doped in this transistor.

2n3773 Pinout

2n3773 is an NPN transistor which mainly consists of three terminals as follow 1. Base 2. Emitter 3. Collector

• A small current at the base side is used to control the large current at the base side.
• The ability of the base to control the number of electrons is used for amplification purpose.

Circuit Diagram of 2n3773

Following figure shows the circuit diagram of 2n3773

• This NPN transistor is a bipolar current controlled device which is different than JFET which is a unipolar voltage controlled device.
• Collector voltage is more than the base voltage and the base is positive with respect to the emitter.
• Emitter current is equal to the sum of base and collector current.
• This NPN transistor can be used with three configurations i.e common emitter configuration, common base configuration, and common collector configuration.
• Common emitter configuration is mainly used for amplification purpose because it features the required voltage and power gain for amplification process.
• Collector and emitter terminals exhibit different size and doping concentration. An emitter is highly doped while the collector is lightly doped.
• Forward current gain is an important factor in determining the characteristics of the transistor. It is an amplification factor i.e measure of current being amplified. It is called Beta, denoted by ß and is a ratio between collector current and base current. Beta value ranges between 20 to 1000 but its standard value is 200. As it is a ratio between two currents so it has no unit.
• Current gain is another important factor, known as alpha, denoted by a and is a ratio between collector current and emitter current. Alpha value ranges between 0.95 to 0.99. Most of the time its values is considered as unity.

Absolute Maximum Ratings

Following shows the absolute maximum ratings of 2n3773

• Collector-Emitter sustaining voltage with an open base is 140 V.
• Collector-Base voltage with open emitter is 160 V.
• Maximum power it can dissipate is 150 W.
• These are the stress ratings, which if exceeded above absolute maximum ratings, can damage the device.
• Similarly, if stresses are applied for the extended period of time, they can affect the device reliability.

Difference between NPN and PNP Transistors

• There is a difference between NPN and PNP transistors based on charge carriers.
• Electrons are main charge carriers in NPN transistors while holes are main charge carriers in PNP transistors.
• Most of the experts prefer NPN transistors over PNP transistors because they think conduction carried out through electrons is better than conduction through holes.

Applications

• Disk Head Positioners.
• High power audio and Linear Applications.
• High-performance switching and amplification purpose.

That's all for today. I hope you have found this article useful. We always try to give you quality work that meets with your needs and expectations. Feel free to keep us updated with your feedback and suggestions, they allow us to give you quality work and maintain the overall performance of the site. If you have any question you can ask me in the comment section below. I'd love to help you according to best of my expertise. Thanks very much for reading the article. Stay Tuned!

Introduction to 2n7002

Hello Friends! I aspire you a very happy and promising life. We always feel happy when you visit out site for useful information that guides you in the right direction and puts you ahead from others. Today, I am going to unlock the details on the Introduction to 2n7002. It is an N-Channel MOSFET which is mainly designed to reduce on-state resistance. It is an ideal choice for high efficiency power management applications because it comes with an ability to maintain high switching performance. I'll try to cover each and every aspect related to this MOSFET so you find all information at one place. Let's dive in and explore what is this about and what are its main applications?

Introduction to 2n7002

• 2n7002 is an N-Channel MOSFET which is mainly designed to reduce on-state resistance.
• It mainly consists of three terminals called source, gate and drain. Unlike normal BJT, this is a voltage controlled device, in which voltage applied at the gate terminal is used to control the conductivity between source and drain terminals.
• Source, gate and drain of this MOSFET are analogous to emitter, base and collector of BJT.
• The conducting path between source and drain is referred as channel whose length is controlled by the input voltage applied at the gate terminal.
• 2n7002 is an ideal choice for high efficiency power management applications because it comes with an ability to maintain high switching performance.
• It encompasses low gate threshold voltage and low input capacitance and comes in surface mount package.
• High saturation current capability makes it rugged and reliable.
• This high cell density MOSFET are designed using DMOS technology.

• 2n7002 is an ideal choice for the applications requiring 400 mA DC and is capable of delivering pulsed current up to 4 A.
• It doesn't conduct under normal operating conditions i.e. Vgs=0 and is considered as OFF. It will only conduct when there is small voltage applied at the gate terminal.
• As it is an N-Channel MOSFET so conductivity is carried out by the movement of electrons rather than hole.
• It widely replaces BJT in many applications, because it requires no biasing at the gate terminals, means gate draws no current. However, small surge current is required to charge the capacitance at the gate terminal.
• There is no need of current limiting resistor at the gate terminal because gate draws no current. However, protection gate resistor is used for circuits containing external gate vulnerability.

2n7002 Pinout

2n7002 is a voltage controlled device which mainly consists of three terminals 1. Source 2. Gate 3. Drain

• Insulation layer is existed between gate and body of the transistor.
• Gate draws no current and is practically isolated from drain and source.

2n7002 Working

• Movement of electrons plays an important role in defining the nature of any MOSFET. Conduction between drain and source is carried out by the free movement of electrons.
• Voltage applied at the gate terminal allows the electrons to flow from source to drain terminals.
• This is an N-Channel MOSFET where drain and source are composed of N type material while body and substrate is composed of P type material.
• Applying positive voltage at the gate terminal will attract the electrons available at the P type semiconductor substrate material.
• The gate of this transistor is mainly composed of poly silicon.
• Adding Silicon Dioxide on the substrate layer gives the typical metal oxide semiconductor construction.
• Silicon Dioxide is a dielectric and behaves like a capacitor where one of its electrodes  is replaced by the semiconductor.
• Applying positive voltage at the MOS structure will change the charge distribution in the semiconductor.  When positive voltage is applied the holes present in the oxide layer will observe a force and allow the holes to move downward.  As a result, bound negative charges that are associated with the acceptor atoms will accumulate the depletion region.
• The overall conductivity of the channel between source and drain will increase with the overdose of free electrons in the P type substrate which ultimately helps in inverting the electrical properties of the P type substrate, allowing the substrate to change into N type material.
• The positive voltage applied at the gate terminal controls the number of electrons. Increasing the positive voltage at the gate terminal will attract more electrons which ultimately helps in widening the channel path between source and drain terminals. Hence, conductive of this MOSFET is directly proportional to the intensity of positive voltage applied at the gate terminal.

Absolute Maximum Ratings

Following figure shows the absolute maximum ratings of 2n7002.

• Drain-Source and Drain-Gate voltage is 60 V.
• Maximum power it can dissipate is 200 mW.
• Maximum lead temperature in order to conduct efficient soldering is 300 ºC.
• These are the stress ratings, which if increased from absolute maximum ratings, can damage the device.
• Similarly, if these stresses are applied for extended period of time, they can effect device reliability.

Applications

• It is useful for motor control.
• Power management applications use this MOSFET because it comes with high switching performance.
• It is an ideal choice for minimizing on-state resistance.
• This MOSFET product is particularly suited for low current and low voltage applications such as power MOSFET gate drivers and other switching applications.

That's all for today. I hope you have enjoyed the article. However, if you have any question you can ask me in the comment section below. I'd love to help you with best of my expertise. We really appreciate when you keep us updated with your feedback and suggestions, as they allow us to give you quality work. Thanks for reading the article. Stay Tuned!

Introduction to SG3525

Hi Friends! I hope you are enjoying your life and getting most out of it. We are here to give you daily dose of useful information so you can excel and grow in your relevant field and stand out from others. Today, I'm going to uncover the details on the Introduction to SG3525. It is a pulse width modulated control circuit that is used to control switching power supplies and particularly helps in providing lower external parts count and improved performance. I'll try to cover every aspect and properties related to this modulated control circuit so you get clear idea what is it about and what are its main applications. You can also have a look at Introduction to SG3524 which is mainly used in regulation power supplies and switching regulators. Let's dive in and explore the features of SG3525.

Introduction to SG3525

• SG3525 is a pulse width modulated control circuit that is used to control switching power supplies and particularly helps in providing lower external parts count and improved performance.
• It is voltage control PWM controller in which feedback voltage is compared with reference value which then controls the duty cycle of PWM.
• It is mainly used in inverter applications and utilizes two main PWM outputs that are inversion of each other.

• The on-chip +5.1 reference is modified to ±1% and the error amplifier that comes with both input common mode voltage range and reference voltage, helps in terminating the need of external resistors.
• A sync input provided to the oscillator helps in synchronizing single unit to the external system clock.
• A single resistor existed between the discharge pins and Ct is used to program the wide range of deadtime.
• This modulator is also incorporated with built-in-soft start-circuitry which needs external timing capacitor.
• A shutdown pin is used to control both output stages and soft-start circuitry that also features instantaneous turn-off with the help of PWM latch and pulsed shutdown.
• When Vcc stays below nominal, the under voltage lockout limits both soft-start capacitor and outputs.
• The output stage of this modulator exhibits NOR logic and is similar to totem-pole design which makes it stand out from other ICs.

SG3525 Pins

• SG3525 is a 16 pin integrated circuit. Following figure shows the pin number along with their pin names.

SG3525 Pin Description

• SG3525 is a 16 pin IC. Each pin is allocated with different function.
• Following figure shows the pin number, pin name and functions associated with each pin.

• Soft start and compensation terminals receive the pull down signal and turn off the outputs when it sinks a maximum of 100µA current.
• There is another way of turning off the output which involves the shutdown circuitry of pin 10 that comes with an added amount of shutdown options.
• This circuit is activated by providing positive signal at the pin 10 which then executes two functions i.e. output signal turns off by immediately setting PWM latch and soft-start capacitor starts to discharge during the availability of 150 µA current.
• If the shutdown command is applied for short period of time, the PWM signal will be eliminated without discharging soft-start capacitor significantly, helps in carrying out pulse by pulse current limiting.
• However, if pin 10 is hold for longer duration will discharge the external capacitor quickly.

SG3525 Features

• 8V to 35V Operation
• 5.1V ± 1.0% Trimmed Reference
• Separate Oscillator Sync Pin
• 100 Hz to 400 kHz Oscillator Range
• Input Undervoltage Lockout
• Adjustable Deadtime Control
• Pulse-by-Pulse Shutdown
• Dual Source/Sink Outputs
• Latching PWM to Prevent Multiple Pulses

SG3525 Pinout

• Pinout diagram features proper and detailed configuration of any electronic device.
• SG3525 pinout diagram is shown in the figure below which elaborates the configuration of each pin of this modulator.

SG3525 Block Diagram

• Block diagram is described in schematic form which features the general arrangement of parts or elements used in the device or process.
• Following figure shows the block diagram of SG3525.

• It is clear from the figure that output stage of this modulator represents NOR logic.

Absolute Maximum Ratings of SG3525

• Following figure shows the absolute maximum ratings of SG3525.

• Supply voltage and collector supply voltage is 40 V.
• Maximum power it can dissipate is 1000 mW.
• It is important to note that if stresses are exceeded above absolute maximum ratings, they can damage the device ultimately.
• Similarly, if stresses are applied for maximum period of time, they can effect the device reliability.

Applications

• SG3525 has a wide range of applications but it is mainly used in transformer DC-DC inverters.
• It is used for regulating power supply.
• This modulator is useful for switching regulators of any polarity.

That's all for today. I hope you have enjoyed the article. We always try our best to give you practical information that resonates with your needs and expectations. However, if still you feel skeptical or have any question related to this modulator, you can ask me in the comment section below. I'd love to help you according to best of my expertise. Feel free to keep us updated with your feedback and suggestions, they help us to give you quality work so that you keep coming back for what we have to offer.

Introduction to 2n2219

Hi Guys! Hope you all are doing great! We always feel happy when you come back again and again for useful information so you can excel and grow in your relevant field. Today, I am going to unlock the details on the Introduction to 2n2219. It is an NPN (negative-positive-negative) bipolar junction transistor (BJT) which is specially designed for a small signal general purpose and switching applications. It contains P doped semiconductor that lies between the two layers of N doped material. You can also check an Introduction to 2n2905 which is a complementary PNP transistor of this NPN transistor. I'll try to cover every aspect related to this transistor so you don't need to go anywhere and you find all information in one place. Let's dive in and explore what is this about and what are its main applications?

Introduction to 2n2219

• 2n2219 is an NPN bipolar junction transistor which is mainly used for small signal general purpose amplification and switching applications.
• It mainly consists of three terminals called emitter, base, and collector. And the base is positive with respect to the emitter.
• It is termed as bipolar junction transistor because conduction is carried out by both charge carriers i.e. electrons and holes but majority charge carriers are electrons.
• Movement of electrons plays an important role in defining the conducting behavior of this NPN transistor.

• This NPN transistor can be configured with three configurations named as a common collector, common base, and common emitter configuration.
• 2n2219 is a current controlled device where small current at the base side is used to control large current at the emitter and collector side.
• When positive voltage is applied at the base side, electrons start to flow from emitter to collector and base is used to control the number of electrons.

2n2219 Pinout

• Following figure shows the pinout of 2n2219.

• It mainly consists of three terminals which determine the overall nature of the transistor.

1. Emitter 2. Base 3. Collector

• When a small voltage is applied at the base side, it gets biased and allows the small current at the base side to control the large current at the emitter and collector side.
• Conduction is carried out by the movement of electrons from the emitter to collector and base is used to control the number of electrons.

Circuit Diagram of 2n2219

• The circuit symbol of 2n2219 is shown in the figure below.

• This NPN silicon transistor exhibits positive base side and negative emitter side.
• Similarly, a voltage at the collector side is more than the voltage at the base side.
• This transistor can be configured into three main configurations called common emitter configuration common base configuration. Common emitter configuration is mainly used for amplification purpose because it features the exact voltage and power gain required for amplification purpose.
• This common emitter configuration allows the input to increase by 20dB which is 100 times more than the input signal.
• Collector and emitter are slightly different in terms of their size and doping concentrations. A collector is lightly doped while the emitter is highly doped.
• This NPN transistor is a bipolar current controlled device which is different than MOSFET that is unipolar voltage controlled device.
• Forward current gain is an important feature that is mainly used for determining the amplification capacity of the transistor. Forward current gain is called beta, usually denoted by ß and is a ratio between collector current to the base current. It is called amplification factor which is a measure of current being amplified. Beta value ranges between 20 to 1000 but its standard value is 200. Beta is a ratio of two current so it has no unit.
• The current gain of this transistor is represented by alpha a which is a ratio between collector current and emitter current. Alpha value ranges between 0.95 to 0.99 and most of the times its value is considered as a unity.
• Both NPN and PNP transistors are different in terms of charge carriers. Electrons are major carriers in NPN transistors while holes are major carriers in PNP transistors.

Absolute Maximum Ratings

• Following figure shows the absolute maximum rating of 2n2219

• Collector-Base voltage with open emitter is 60 V. And collector-emitter voltage with an open base is 30 V.
• Maximum Power it can dissipate is 800 mW.
• These are the stress ratings, if these stress ratings are exceeded from absolute maximum rating, they can damage the device.
• Similarly, if stresses are applied for an extended period of time, they can affect the device reliability.

Applications

• It exhibits high current and low voltage which makes it an ideal choice for high-speed switching.
• The ability of a base terminal to control the number of electrons is mainly used for amplification purpose.

That's all for today. I hope you have enjoyed the article. I have tried my best to provide most relevant and useful information however if still you feel skeptical or have any question you can ask me in the comment section below. I'd love to help you according to best of my expertise. We highly appreciate when you keep us updated with feedback and suggestions, they help us provide you quality work that resonates with your needs and requirements. Stay Tuned!

Introduction to 2n5457

Hey Fellas! Hope you are enjoying life and getting most out of it. I am back to give you daily dose of information so you can excel and grow in your relevant field and keep coming back for what we have to offer. Today, I am going to uncover the details on the Introduction to 2n5457. It is an N Channel JFET (Junction Field Effect Transistor) which is mainly designed for audio and switching applications. It consists of drain, source and gate which are denoted by D, S and G respectively. I'll try to cover every aspect related to this transistor so you don't need to go any where and find all information in one place. Let's dive in and explore what is it about and what are its main applications.

Introduction to 2n5457

• 2n5457 is an N channel field effect transistor which is mainly used for audio and switching applications.
• It consists of source, drain and gate which are analogous to emitter, collector and base in the bipolar junction transistors.
• In contrast to normal bipolar junction transistor, it is a voltage controlled device which doesn't require any biasing current to control large current at the other terminals.
• It starts conducting when current flows between drain and source terminals.
• It is called field effect transistor because static field plays an important role in transistor operation.
• A JFET is considered fully ON when there is no potential difference between source and gate terminals. However, if you apply negative gate-source voltage, it will turn off this device.
• This component limits the flow of current if there exists any potential difference between source and gate terminals.
• A JFET are available in two types, N type and P type channel. 2n5457 is a N type JFET where voltage at the source terminal is greater than the voltage at gate terminal.

• Current also has a large effect on the electric field between drain and source.
• 2n5457 comes with high speed analog circuit performance and low error voltage where drain and source are interchangeable.
• 2n5457 is composed of semiconductor material which contains negative charge carriers such as electrons.
• It has high AC input impudence and high DC input resistance.
• It comes in TO-92 plastic encapsulated package and contains low transfer and input capacitance.
• In JFET, the flow of current is handled by limiting the channel through which current is flowing.
• This JFET is mounted using through hole technology, means it comes with more strength to endure stress but it occupies large space as compared to surface mount technology on which devices are mounted directly on the surface of the PCB board.

2n5457 Pinout

• 2n5457 N Channel Field Effect Transistor mainly consists of three pins.

1: Drain 2: Source 3: Gate

• In this N channel device voltage at the gate terminal is used to handle the current that flows from the device.
• It will conduct when current flows from source and drain terminals.

Working of 2n5457

• Field effect process is mainly used to make conducting channel in this JFET.
• Flow of electrons in any transistor plays an important role to predict the conducting nature of the device.

• In this N Channel JFET flow of electrons between source and drain is limited by the number of holes available in the gate terminal.
• An electric filed is generated when we apply positive voltage at the gate terminal. It results in the flow of electrons from source to drain terminal, helps in switching on the transistor.

• Field effect process is used to generate the current that's why these transistors are termed as field effect transistors.

Absolute Maximum Ratings

• Following figure shows the absolute maximum ratings of 2n5457

• Drain-Source and Drain-Gate voltage is 25 V.
• Maximum Power it can dissipate is 310 mW.
• These ratings are derived from maximum junction temperature of 150 C.
• It is important to note that if stresses are exceeded above absolute maximum ratings, they can damage the device.
• Similarly, if stresses are applied for extended period of time, they can effect the device reliability.

Electrical Characteristics

• Following figure shows the electrical characteristics of the N channel 2n5457 JFET.

• The figure shows both on state and off state electrical characteristics.
• It is important to note that electrical characteristics don't determine the quality of the product.
• These are just used for determining the electrical behavior of the device so it can be perfectly aligned and resonated with the electrical circuit it will be used for.

Applications

• This device is mainly used for analog switching applications and is referred as low level amplifier or switching transistor.
• It has low cross modulation and intermodulation distortion which makes it an ideal choice for most of the applications.

That's all for today. I have tried my best to give you most relevant and useful information related to 2n5457 N Channel JFET. However, if still you feel skeptical or have any question, you can ask me in the comment section below. I'd love to help you according to best of my expertise. We feel happy when you keep us updated with your feedback and suggestions, they allow us to give you quality work that resonates with your needs and expectations. Stay Tuned!

Introduction to 4n25

Hey Fellas! We always strive to give you useful information that resonates with your needs and requirements. Today, I'm going to unlock the details on the Introduction to 4n25. It is a standard single channel 6 pin optocoupler that contains silicon NPN phototransistor and gallium arsenide infrared LED. It is widely used in motor drive and control, communication and networking, and power management. I'll try to cover every aspect related to this optocoupler so you don't need to go anywhere else and find all information in one place. Let's dive in and explore what it does and what are its main features.

Introduction to 4n25

• 4n25 is a standard single channel 6 pin industry standard phototransistor coupler that contains silicon NPN phototransistor and gallium arsenide infrared LED.
• It is also known as an optocoupler, photocoupler, or optoisolator.
• The main purpose of this device is to transfer an electrical signal between two electrically isolated circuits by using light.
• Simply put, the input signal is transformed into light, which then sends to the dielectric channel, the light is extracted at the output and then it is transformed back to the electric signal.
• Optoisolator is very useful when Electronic power transmission lines are encountered with high voltage surges that can be induced by radio frequency transmissions and lighting.
• Remote lighting strikes are able to produce surges up to 10kV, which is much larger than voltage limits of any electronic device.
• Optocoupler prevents the high voltages surges from entering the system which ultimately keeps the system from permanent damage.

• Reinforced protection capability makes this device an ideal choice for applications where voltage surge happens and it protects both the equipment and user who is operating the equipment.
• The LED used in this device converts input electrical signal into light.
• A photosensor that can be phototransistor, photodiode, or photoresistor is incorporated in the device to directly produce electric energy by detecting the incoming light.
• This device also comes in lead formed configuration which makes it suitable for surface mounting.
• Phototransistor output with base connection makes it an ideal choice for most of the applications including reed relay driving, AC mains detection, logic ground isolation, telephone ring detection, switch mode power supply feedback.
• It comes with an input-output coupling capacitance of less than 0.5 pF, has interfaces with common logic families, industrial standard dual-in-line 6-pin package. and isolation test voltage of 5000 Vrms.

4n25 Pin Configuration

The 4n25 photocoupler mainly consists of 6 pins which are as follow. 1. LED Anode 2. LED Cathode 3. N.C 4. Emitter 5. Collector 6. Base

• The LED used in this optocoupler is used for transferring electric signal into light. The LED anode is the positive side of the LED and LED cathode is the negative side of the LED.
• The phototransistor is a photosensor that produces electric energy by detecting input light signal.

Absolute Maximum Ratings

Following figure shows the absolute maximum ratings of 4n25.

• You can see from the figure, a reverse voltage is 6 V and forward current is 60 mA.
• Maximum power it can dissipate is 70 mW. Collector-emitter breakdown voltage is 70 V and is denoted by Vceo.
• Similarly, the emitter-base breakdown voltage is 7 V and is denoted by 7 V.
• These absolute maximum ratings are obtained at an ambient temperature of 25 C
• It is important to note that if stresses are exceeded above absolute maximum ratings, they can damage the device permanently.
• Similarly, if absolute maximum ratings are applied for the extended period of time, they can affect the device reliability.

Electrical Characteristic

Following figure shows the electrical characteristics of the photocoupler 4n25.

• The maximum and minimum values in the figure above are testing requirements.
• Typical values are considered as the result of the engineering evolution and are characteristics of the device.
• Typical values are used for information purpose only and they are not related to any testing requirement.
• You can see from the figure, isolation test voltage is 5000 V and maximum saturation voltage is 0.5 voltage.
• You must take one thing into consideration, these electrical values don't define the quality of the product.

Applications

The 4n25 is widely used in many electronic applications because of its advanced features and characteristics. Following are some applications it is used for.

• Solid State Relays
• I/O Interfacing
• General Purpose Switching Circuit
• Reed Relay Driving
• AC mains detection
• Logic Ground Isolation
• Telephone ring detection
• Switch mode power supply feedback
• Motor drive and control
• Communication and networking
• Power management

That's all for today. I hope you have enjoyed the article and got useful information. However, if still you feel skeptical or have any doubt you can ask me in the comment section below, I'd love to help you according to best of my expertise. Your feedback and suggestions are highly appreciated, they allow us to give you quality articles that meet your expectations. Stay Tuned!

Introduction to 2n3055

Hey Guys! Hope you all are doing great and having fun with your lives. I am back to feed your stomach with plenty of information so you can progress and grow in real life. Today, I am going to unlock the details on the Introduction to 2n3055. It is a semiconductor NPN (negative-positive-negative) power transistor which comes in TO-3 Casing. I'll try to cover as many aspects possible related to this device so can get a brief overview about what it does and what are the applications it is used for. Let's get started.

Introduction to 2n3055

• The 2n3055 is a semiconductor NPN bipolar transistor which consists of three terminals called emitter, base, and collector.
• Unlike FETs(Field effect transistors) it is a current controlled device in which small current at the base side is used to control a large amount of current at the emitter and collector side.

• It is a bipolar device in which conduction is carried out by the movement of both charge carriers i.e electrons and holes.
• The measure of base current to control the large current at the emitter and collector side is used for amplification purpose.
• As 2n3055 is an NPN transistor, here base with positive with respect to emitter and P layer lies between the two layers of N doped semiconductor.
• P-doped layer of transistor acts like a base while other two N sides represent emitter and collector respectively.
• It comes with lots of electronic applications but mostly it is used for switching and amplification purpose.
• This NPN transistor can be configured with three configurations named as a common collector, common base, and common emitter configuration.

• It is important to note that it won't be useful for amplification purpose when it is configured with common emitter configuration as it encompasses a transition frequency of around 3 MHz that will allow the forward current gain drop to 1.
• The maximum collector-emitter voltage is highly dependent on the resistance intensity between emitter and base, provided by the external circuit.
• The 2n3055 is connected to a heat sink which widely effects the overall power dissipation by the transistor.
• However, in most of the application when an ambient temperature is high, low power dissipation is expected.
• This device is manufactured in such a way it can function with an efficient heat sink.
• However, proper care should be given in order to mount the device perfectly, otherwise, it can harm the device at large.
• Mica insulator is added in the manufacturing process that isolates the case of the transistor from the heat sink.
• This transistor is a bipolar current controlled device which is different than JFET which is a unipolar voltage controlled device.

2n3055 Pinout

2n3055 consists of three terminals which are given below. 1: Emitter 2: Base 3: Collector Pinout of 2n3055 is given in the figure below.  

• A small amount of base current is used to control the large current at the emitter and base side.
• Conduction is carried out when electrons emit from the emitter and are collected by the collector.

Circuit Diagram of 2n3055

The circuit symbol of 2n3055 is shown in the figure given below.

• As it is an NPN silicon transistor so it has positive base terminal and a negative emitter terminal.
• This transistor is a current controlled device where a small amount of current at the base side is used to handle a large amount of current at the emitter and collector side.
• The NPN and PNP transistor encompass same features with some exceptions i.e. Current will sink into the base side in case of PNP transistor while current from the base side will source to the transistor in case of NPN transistor.
• Emitter current is the sum of base and collector current.
• Transistor forward current gain can be found by dividing the collector current to the base current. It is also called beta current and is denoted by ß. Beta has no units as it is a ratio between two currents.
• Beta value is used for the amplification purpose. Beta value ranges between 20 to 1000, however, its standard value is 200.
• At positive base to collector voltage, the ratio between collector current to the emitter current is called current gain of the transistor and is denoted by alpha a.
• The value of alpha lies between 0.95 to 0.99, however, in most of the cases it is considered as 1.

Maximum Rating of 2n3055

Absolute maximum rating of 2n3055 are given below

• It dissipates power around 115 W when the case temperature is set to 25 degrees.
• It is a 60 V and 15 A device which comes with a base current of 7 A and forward current gain ranges between 20 to 70.

Applications

• It is widely used in lots of applications where amplification of the signal is required.
• It is used for switching purpose.

That's all for today. I hope you have got a clear idea about this NPN transistor. However, if you still feel any problem in understanding the concept of this NPN transistor, you can ask me in the comment section below. I'd love to help you in this regard. Thanks for reading the article. Stay Tuned!

Introduction to 2n7000

Hi Everyone! I hope you all are doing great. I am back to whet your appetite with daily dose of information and knowledge that puts you ahead from others and makes you stand out of the party. Today, I am going to give you the Introduction to 2n7000. It is an enhancement type N-Channel MOSFET which is mostly used for low power switching applications. It comes with different current ratings and lead arrangement. I am going to give you a brief detail about this component, so you don't have to go any where else to find information regarding this device. Let's get started.

Introduction to 2n7000

• 2n7000 is a uni-polar N-Channel Enhancement mode MOSFET which comes with terminals called drain source and gate.
• In this transistor, the input voltage applied at the gate terminal is used to control the conductivity between source and drain.
• The conducting path between source and drain is called channel whose length can be controlled by the input voltage at the gate terminal.

• As it is an enhancement mode MOSFET, it is assumed as OFF i.e. it doesn't conduct under normal operating condition when Vgs=0. It will start conducting when some input voltage is applied at the gate terminal.
• 2n7000 is a 60 V device and comes in TO-92 enclosure. Sometimes, it is termed as FETlinton and it an N-Channel MOSFET, so here conduction is carried out by the movement of electron rather than holes.
• It is a voltage controlled device which is widely used in place of other BJT(Bipolar junction transistors).
• However, it has many advantages over BJTs, as it requires no biasing for gate i.e. gate draws no current however, we need small surge current in order to charge the capacitance at gate terminal.
• It comes with high impedance and insulated gate, sometimes it is referred as IGFET(Insulated Gate Field Effect Transistor).

• As gate draws no current so it doesn't need any current limiting resister at the input of the gate terminal. However, protection gate resistor is required for the 2n7000 when it is used for the circuits that come with external gate vulnerability.

2n7000 Pinout

2n7000 is a uni-polar voltage controlled device which consists of three terminals. 1: Source 2: Gate 3: Drain  

• Gate is practically isolated from drain and source and it draws no current.
• There is an insulation layer that lies between the gate and the body of transistor.

Working of 2n7000

• In 2n7000, the conduction between source and drain is carried out by the movement of electrons.
• In this transistor, source and drain are made up of n-type material while its body and substrate is made up of p-type material.
• In 2n7000, gate is biased by applying the positive input voltage that will attract the electrons available in the p-type semiconductor substrate.
• The gate of this transistor is used composed of layer of poly-silicon.
• When we add Silicon dioxide on the layer of substrate it gives the typical metal oxide semiconductor construction.
• Silicon dioxide is a dielectric material so it will act as a capacitor where one of its electrodes will be replaced by the semiconductor.
• If we apply positive voltage at the MOS structure, it will alter the charge distribution in the semiconductor. With the addition of positive voltage, the holes present under the oxide layer will experience a force and allow the holes to move downward. The depletion region will be accumulated by the bound negative charges which are associated with acceptors atoms.
• The overdose of free electrons available in the p-type substrate increases the overall conductivity of channel, and constantly inverts the electrical properties of p-type substrate, allowing the substrate to change into n-type material.
• The positive voltage applied on the gate terminal control the movement of electrons. As we increase the positive change at the gate terminal the more it will attract the electron, hence resulting in widening the channel path between source and drain terminals. Thus, increasing the positive voltage at the gate terminal will increase the overall conductivity of the transistor.
• This N-Channel transistor is composed to reduce on state resistance and give efficient switching performance.

Maximum Rating 2n7000

Maximum rating of 2n7000 are given in the figure given below.

• Drain-Source voltage is 60 V while Drain current is 200 mA.
• Power dissipation is about 350 mW.
• If values are exceeded more than the given values, they can harm the device at large.

Difference between N-Channel MOSFET and BJT

• N-Channel MOSFET are unipolar devices and BJT are bipolar devices.
• BJT are current control devices while MOSFET are voltage controlled devices.
• In BJT, we need base current to control the large amount of current at emitter and collector. In MOSFET, no biasing is required at the gate side as it draws no current. However small initial current is needed to charge the capacitance of the transistor.

Applications

• 2n7000 is mostly used for low power switching applications.
• It is used as a driver for motors, relays and lamps.
• It is widely used in battery operated systems and solid state relays.
• High speed circuits use MOSFET 2n7000 as it requires no buffer.

That's all for today. I hope you have enjoyed the article. I always try my best to give you quality work that requires minimum effort from your side to digest this information completely. However, if still you need any kind of help, you can ask me in the comment section below, I'd love to help you in this regard. Thanks for reading the article. Stay Tuned!

Introduction to 2n4401

Hey Everyone! I hope you are doing great and having fun with your lives. I am back to give you a daily dose of information so you can grow and progress in your relevant field. Today, I am going to uncover the details on the Introduction to 2n4401. It is an NPN (negative-positive-negative) bipolar junction transistor (BJT) which is used for general purpose amplification and switching purpose. It consists of P doped semiconductor that exists between the two layers of N doped material. I'll give you a brief detail about this transistor so you don't have to go anywhere for finding the information regarding this transistor. You can also check the Introduction to 2n4402 which is a complementary PNP transistor of this NPN transistor. Let's get started.

Introduction to 2n4401

• 2n4401 is an NPN bipolar junction transistor which is used for general purpose amplification and switching purpose.
• It is called bipolar junction transistor because conduction is carried out by both charge carriers i.e electrons and holes, but majority charge carriers will be electrons.
• It mainly consists of three terminals called emitter, base, and collector.
• Small current present at the base side is used to control the large current at the emitter and conductor side.

• P layer of this transistor represents the base terminals while other two N layers represent emitter and collector respectively. Base is positive with respect to emitter.
• 2n4401 is actually a current control device where small current at the base side is used to control the large current at the emitter and collector side.
• When a positive voltage is applied at the base side, it gets biased and allows the current to flow from emitter to collector.
• The emitter emits the electrons which are then collected by the collector and base controls the number of electrons.
• A transistor is a combination of diodes joined back to back.

2n4401 Pinout

2n4401 is an NPN transistor which mainly consists of three terminals. 1: Emitter 2: Base 3: Collector

• Base side of this transistor is lightly doped while emitter side is heavily doped.
• When small current controls the large current at the emitter and collector, this process is used for amplification purpose.

Circuit Diagram of 2n4401

Circuit diagram of 2n4401 is shown in the figure below.

• The voltage at the collector side is more than the voltage at the base side.
• This transistor comes with three main configurations i.e common base configuration, common emitter configuration, and common collector configuration.
• Common emitter configuration is mainly used for amplification purpose because it exhibits the required voltage and power gain for amplification purpose.
• This configuration helps in increasing the input signal by 20dB which is nearly 100 times more than the input signal.
• Emitter current is the combination of base and collector current.
• Collector and emitter can be differentiated by their size and doping concentration. The emitter is highly doped while the collector is lightly doped.
• The forward current gain of the transistor can be denoted by beta ß which is a ratio between collector current and base current. This beta is actually an amplification factor which is a measure of current being amplified. Beta value ranges between 20 to 1000 but its standard value is 200. Beta is a ratio of two current so it has no unit.
• The current gain of this transistor is represented by alpha a which is a ratio between collector current and emitter current. Alpha value ranges between 0.95 to 0.99 and most of the times its value is considered as a unity.

Absolute Maximum Ratings of 2n4401

Absolute maximum ratings of 2n4401 is shown in the figure below.

• Collector-Emitter and Collector-Base voltages are 40 and 60 V respectively.
• If stresses are exceeded above these absolute maximum ratings, they can damage the device.
• Similarly, if stresses are applied for the extended period of time, they can affect the device reliability.

Difference between NPN and PNP transistors

• The main difference between NPN and PNP transistor is the availability of charge carriers. Electrons are majority charge carriers in case of NPN transistor while holes are majority charge carriers in case of PNP transistors.
• Most of the professional prefer NPN transistor over PNP transistor because conduction carried out by the mobility of electrons is better than conduction through mobility of holes.
• These NPN and PNP bipolar junction transistors are current controlled devices and are different than unipolar MOSFET that is a voltage controlled device.

Applications

• This transistor is mainly used for general purpose amplification.
• In many applications, this transistor behaves as a simple switch. When a voltage is applied at the base side, it gets biased and transistor behaves as an ON switch. When there is no voltage at the base side, it won't get biased and the transistor behaves as an OFF switch.

That's all for today. I hope you have enjoyed the article. I always try to give you information based on recent topics so you keep coming back for what we have to offer. If you feel skeptical or have any question, you can ask me in the comment section below. I'll try my best to help you in this regard according to best of my expertise. Stay tuned!