The Engineering Projects

Introduction to 2n2219

Hi Guys! Hope you all are doing great! We always feel happy when you come back again and again for useful information so you can excel and grow in your relevant field. Today, I am going to unlock the details on the Introduction to 2n2219. It is an NPN (negative-positive-negative) bipolar junction transistor (BJT) which is specially designed for a small signal general purpose and switching applications. It contains P doped semiconductor that lies between the two layers of N doped material. You can also check an Introduction to 2n2905 which is a complementary PNP transistor of this NPN transistor. I'll try to cover every aspect related to this transistor so you don't need to go anywhere and you find all information in one place. Let's dive in and explore what is this about and what are its main applications?

Introduction to 2n2219

• 2n2219 is an NPN bipolar junction transistor which is mainly used for small signal general purpose amplification and switching applications.
• It mainly consists of three terminals called emitter, base, and collector. And the base is positive with respect to the emitter.
• It is termed as bipolar junction transistor because conduction is carried out by both charge carriers i.e. electrons and holes but majority charge carriers are electrons.
• Movement of electrons plays an important role in defining the conducting behavior of this NPN transistor.

• This NPN transistor can be configured with three configurations named as a common collector, common base, and common emitter configuration.
• 2n2219 is a current controlled device where small current at the base side is used to control large current at the emitter and collector side.
• When positive voltage is applied at the base side, electrons start to flow from emitter to collector and base is used to control the number of electrons.

2n2219 Pinout

• Following figure shows the pinout of 2n2219.

• It mainly consists of three terminals which determine the overall nature of the transistor.

1. Emitter 2. Base 3. Collector

• When a small voltage is applied at the base side, it gets biased and allows the small current at the base side to control the large current at the emitter and collector side.
• Conduction is carried out by the movement of electrons from the emitter to collector and base is used to control the number of electrons.

Circuit Diagram of 2n2219

• The circuit symbol of 2n2219 is shown in the figure below.

• This NPN silicon transistor exhibits positive base side and negative emitter side.
• Similarly, a voltage at the collector side is more than the voltage at the base side.
• This transistor can be configured into three main configurations called common emitter configuration common base configuration. Common emitter configuration is mainly used for amplification purpose because it features the exact voltage and power gain required for amplification purpose.
• This common emitter configuration allows the input to increase by 20dB which is 100 times more than the input signal.
• Collector and emitter are slightly different in terms of their size and doping concentrations. A collector is lightly doped while the emitter is highly doped.
• This NPN transistor is a bipolar current controlled device which is different than MOSFET that is unipolar voltage controlled device.
• Forward current gain is an important feature that is mainly used for determining the amplification capacity of the transistor. Forward current gain is called beta, usually denoted by ß and is a ratio between collector current to the base current. It is called amplification factor which is a measure of current being amplified. Beta value ranges between 20 to 1000 but its standard value is 200. Beta is a ratio of two current so it has no unit.
• The current gain of this transistor is represented by alpha a which is a ratio between collector current and emitter current. Alpha value ranges between 0.95 to 0.99 and most of the times its value is considered as a unity.
• Both NPN and PNP transistors are different in terms of charge carriers. Electrons are major carriers in NPN transistors while holes are major carriers in PNP transistors.

Absolute Maximum Ratings

• Following figure shows the absolute maximum rating of 2n2219

• Collector-Base voltage with open emitter is 60 V. And collector-emitter voltage with an open base is 30 V.
• Maximum Power it can dissipate is 800 mW.
• These are the stress ratings, if these stress ratings are exceeded from absolute maximum rating, they can damage the device.
• Similarly, if stresses are applied for an extended period of time, they can affect the device reliability.

Applications

• It exhibits high current and low voltage which makes it an ideal choice for high-speed switching.
• The ability of a base terminal to control the number of electrons is mainly used for amplification purpose.

That's all for today. I hope you have enjoyed the article. I have tried my best to provide most relevant and useful information however if still you feel skeptical or have any question you can ask me in the comment section below. I'd love to help you according to best of my expertise. We highly appreciate when you keep us updated with feedback and suggestions, they help us provide you quality work that resonates with your needs and requirements. Stay Tuned!

Introduction to 2n5457

Hey Fellas! Hope you are enjoying life and getting most out of it. I am back to give you daily dose of information so you can excel and grow in your relevant field and keep coming back for what we have to offer. Today, I am going to uncover the details on the Introduction to 2n5457. It is an N Channel JFET (Junction Field Effect Transistor) which is mainly designed for audio and switching applications. It consists of drain, source and gate which are denoted by D, S and G respectively. I'll try to cover every aspect related to this transistor so you don't need to go any where and find all information in one place. Let's dive in and explore what is it about and what are its main applications.

Introduction to 2n5457

• 2n5457 is an N channel field effect transistor which is mainly used for audio and switching applications.
• It consists of source, drain and gate which are analogous to emitter, collector and base in the bipolar junction transistors.
• In contrast to normal bipolar junction transistor, it is a voltage controlled device which doesn't require any biasing current to control large current at the other terminals.
• It starts conducting when current flows between drain and source terminals.
• It is called field effect transistor because static field plays an important role in transistor operation.
• A JFET is considered fully ON when there is no potential difference between source and gate terminals. However, if you apply negative gate-source voltage, it will turn off this device.
• This component limits the flow of current if there exists any potential difference between source and gate terminals.
• A JFET are available in two types, N type and P type channel. 2n5457 is a N type JFET where voltage at the source terminal is greater than the voltage at gate terminal.

• Current also has a large effect on the electric field between drain and source.
• 2n5457 comes with high speed analog circuit performance and low error voltage where drain and source are interchangeable.
• 2n5457 is composed of semiconductor material which contains negative charge carriers such as electrons.
• It has high AC input impudence and high DC input resistance.
• It comes in TO-92 plastic encapsulated package and contains low transfer and input capacitance.
• In JFET, the flow of current is handled by limiting the channel through which current is flowing.
• This JFET is mounted using through hole technology, means it comes with more strength to endure stress but it occupies large space as compared to surface mount technology on which devices are mounted directly on the surface of the PCB board.

2n5457 Pinout

• 2n5457 N Channel Field Effect Transistor mainly consists of three pins.

1: Drain 2: Source 3: Gate

• In this N channel device voltage at the gate terminal is used to handle the current that flows from the device.
• It will conduct when current flows from source and drain terminals.

Working of 2n5457

• Field effect process is mainly used to make conducting channel in this JFET.
• Flow of electrons in any transistor plays an important role to predict the conducting nature of the device.

• In this N Channel JFET flow of electrons between source and drain is limited by the number of holes available in the gate terminal.
• An electric filed is generated when we apply positive voltage at the gate terminal. It results in the flow of electrons from source to drain terminal, helps in switching on the transistor.

• Field effect process is used to generate the current that's why these transistors are termed as field effect transistors.

Absolute Maximum Ratings

• Following figure shows the absolute maximum ratings of 2n5457

• Drain-Source and Drain-Gate voltage is 25 V.
• Maximum Power it can dissipate is 310 mW.
• These ratings are derived from maximum junction temperature of 150 C.
• It is important to note that if stresses are exceeded above absolute maximum ratings, they can damage the device.
• Similarly, if stresses are applied for extended period of time, they can effect the device reliability.

Electrical Characteristics

• Following figure shows the electrical characteristics of the N channel 2n5457 JFET.

• The figure shows both on state and off state electrical characteristics.
• It is important to note that electrical characteristics don't determine the quality of the product.
• These are just used for determining the electrical behavior of the device so it can be perfectly aligned and resonated with the electrical circuit it will be used for.

Applications

• This device is mainly used for analog switching applications and is referred as low level amplifier or switching transistor.
• It has low cross modulation and intermodulation distortion which makes it an ideal choice for most of the applications.

That's all for today. I have tried my best to give you most relevant and useful information related to 2n5457 N Channel JFET. However, if still you feel skeptical or have any question, you can ask me in the comment section below. I'd love to help you according to best of my expertise. We feel happy when you keep us updated with your feedback and suggestions, they allow us to give you quality work that resonates with your needs and expectations. Stay Tuned!

Introduction to 4n25

Hey Fellas! We always strive to give you useful information that resonates with your needs and requirements. Today, I'm going to unlock the details on the Introduction to 4n25. It is a standard single channel 6 pin optocoupler that contains silicon NPN phototransistor and gallium arsenide infrared LED. It is widely used in motor drive and control, communication and networking, and power management. I'll try to cover every aspect related to this optocoupler so you don't need to go anywhere else and find all information in one place. Let's dive in and explore what it does and what are its main features.

Introduction to 4n25

• 4n25 is a standard single channel 6 pin industry standard phototransistor coupler that contains silicon NPN phototransistor and gallium arsenide infrared LED.
• It is also known as an optocoupler, photocoupler, or optoisolator.
• The main purpose of this device is to transfer an electrical signal between two electrically isolated circuits by using light.
• Simply put, the input signal is transformed into light, which then sends to the dielectric channel, the light is extracted at the output and then it is transformed back to the electric signal.
• Optoisolator is very useful when Electronic power transmission lines are encountered with high voltage surges that can be induced by radio frequency transmissions and lighting.
• Remote lighting strikes are able to produce surges up to 10kV, which is much larger than voltage limits of any electronic device.
• Optocoupler prevents the high voltages surges from entering the system which ultimately keeps the system from permanent damage.

• Reinforced protection capability makes this device an ideal choice for applications where voltage surge happens and it protects both the equipment and user who is operating the equipment.
• The LED used in this device converts input electrical signal into light.
• A photosensor that can be phototransistor, photodiode, or photoresistor is incorporated in the device to directly produce electric energy by detecting the incoming light.
• This device also comes in lead formed configuration which makes it suitable for surface mounting.
• Phototransistor output with base connection makes it an ideal choice for most of the applications including reed relay driving, AC mains detection, logic ground isolation, telephone ring detection, switch mode power supply feedback.
• It comes with an input-output coupling capacitance of less than 0.5 pF, has interfaces with common logic families, industrial standard dual-in-line 6-pin package. and isolation test voltage of 5000 Vrms.

4n25 Pin Configuration

The 4n25 photocoupler mainly consists of 6 pins which are as follow. 1. LED Anode 2. LED Cathode 3. N.C 4. Emitter 5. Collector 6. Base

• The LED used in this optocoupler is used for transferring electric signal into light. The LED anode is the positive side of the LED and LED cathode is the negative side of the LED.
• The phototransistor is a photosensor that produces electric energy by detecting input light signal.

Absolute Maximum Ratings

Following figure shows the absolute maximum ratings of 4n25.

• You can see from the figure, a reverse voltage is 6 V and forward current is 60 mA.
• Maximum power it can dissipate is 70 mW. Collector-emitter breakdown voltage is 70 V and is denoted by Vceo.
• Similarly, the emitter-base breakdown voltage is 7 V and is denoted by 7 V.
• These absolute maximum ratings are obtained at an ambient temperature of 25 C
• It is important to note that if stresses are exceeded above absolute maximum ratings, they can damage the device permanently.
• Similarly, if absolute maximum ratings are applied for the extended period of time, they can affect the device reliability.

Electrical Characteristic

Following figure shows the electrical characteristics of the photocoupler 4n25.

• The maximum and minimum values in the figure above are testing requirements.
• Typical values are considered as the result of the engineering evolution and are characteristics of the device.
• Typical values are used for information purpose only and they are not related to any testing requirement.
• You can see from the figure, isolation test voltage is 5000 V and maximum saturation voltage is 0.5 voltage.
• You must take one thing into consideration, these electrical values don't define the quality of the product.

Applications

The 4n25 is widely used in many electronic applications because of its advanced features and characteristics. Following are some applications it is used for.

• Solid State Relays
• I/O Interfacing
• General Purpose Switching Circuit
• Reed Relay Driving
• AC mains detection
• Logic Ground Isolation
• Telephone ring detection
• Switch mode power supply feedback
• Motor drive and control
• Communication and networking
• Power management

That's all for today. I hope you have enjoyed the article and got useful information. However, if still you feel skeptical or have any doubt you can ask me in the comment section below, I'd love to help you according to best of my expertise. Your feedback and suggestions are highly appreciated, they allow us to give you quality articles that meet your expectations. Stay Tuned!

Introduction to 2n3055

Hey Guys! Hope you all are doing great and having fun with your lives. I am back to feed your stomach with plenty of information so you can progress and grow in real life. Today, I am going to unlock the details on the Introduction to 2n3055. It is a semiconductor NPN (negative-positive-negative) power transistor which comes in TO-3 Casing. I'll try to cover as many aspects possible related to this device so can get a brief overview about what it does and what are the applications it is used for. Let's get started.

Introduction to 2n3055

• The 2n3055 is a semiconductor NPN bipolar transistor which consists of three terminals called emitter, base, and collector.
• Unlike FETs(Field effect transistors) it is a current controlled device in which small current at the base side is used to control a large amount of current at the emitter and collector side.

• It is a bipolar device in which conduction is carried out by the movement of both charge carriers i.e electrons and holes.
• The measure of base current to control the large current at the emitter and collector side is used for amplification purpose.
• As 2n3055 is an NPN transistor, here base with positive with respect to emitter and P layer lies between the two layers of N doped semiconductor.
• P-doped layer of transistor acts like a base while other two N sides represent emitter and collector respectively.
• It comes with lots of electronic applications but mostly it is used for switching and amplification purpose.
• This NPN transistor can be configured with three configurations named as a common collector, common base, and common emitter configuration.

• It is important to note that it won't be useful for amplification purpose when it is configured with common emitter configuration as it encompasses a transition frequency of around 3 MHz that will allow the forward current gain drop to 1.
• The maximum collector-emitter voltage is highly dependent on the resistance intensity between emitter and base, provided by the external circuit.
• The 2n3055 is connected to a heat sink which widely effects the overall power dissipation by the transistor.
• However, in most of the application when an ambient temperature is high, low power dissipation is expected.
• This device is manufactured in such a way it can function with an efficient heat sink.
• However, proper care should be given in order to mount the device perfectly, otherwise, it can harm the device at large.
• Mica insulator is added in the manufacturing process that isolates the case of the transistor from the heat sink.
• This transistor is a bipolar current controlled device which is different than JFET which is a unipolar voltage controlled device.

2n3055 Pinout

2n3055 consists of three terminals which are given below. 1: Emitter 2: Base 3: Collector Pinout of 2n3055 is given in the figure below.  

• A small amount of base current is used to control the large current at the emitter and base side.
• Conduction is carried out when electrons emit from the emitter and are collected by the collector.

Circuit Diagram of 2n3055

The circuit symbol of 2n3055 is shown in the figure given below.

• As it is an NPN silicon transistor so it has positive base terminal and a negative emitter terminal.
• This transistor is a current controlled device where a small amount of current at the base side is used to handle a large amount of current at the emitter and collector side.
• The NPN and PNP transistor encompass same features with some exceptions i.e. Current will sink into the base side in case of PNP transistor while current from the base side will source to the transistor in case of NPN transistor.
• Emitter current is the sum of base and collector current.
• Transistor forward current gain can be found by dividing the collector current to the base current. It is also called beta current and is denoted by ß. Beta has no units as it is a ratio between two currents.
• Beta value is used for the amplification purpose. Beta value ranges between 20 to 1000, however, its standard value is 200.
• At positive base to collector voltage, the ratio between collector current to the emitter current is called current gain of the transistor and is denoted by alpha a.
• The value of alpha lies between 0.95 to 0.99, however, in most of the cases it is considered as 1.

Maximum Rating of 2n3055

Absolute maximum rating of 2n3055 are given below

• It dissipates power around 115 W when the case temperature is set to 25 degrees.
• It is a 60 V and 15 A device which comes with a base current of 7 A and forward current gain ranges between 20 to 70.

Applications

• It is widely used in lots of applications where amplification of the signal is required.
• It is used for switching purpose.

That's all for today. I hope you have got a clear idea about this NPN transistor. However, if you still feel any problem in understanding the concept of this NPN transistor, you can ask me in the comment section below. I'd love to help you in this regard. Thanks for reading the article. Stay Tuned!

Introduction to 2n7000

Hi Everyone! I hope you all are doing great. I am back to whet your appetite with daily dose of information and knowledge that puts you ahead from others and makes you stand out of the party. Today, I am going to give you the Introduction to 2n7000. It is an enhancement type N-Channel MOSFET which is mostly used for low power switching applications. It comes with different current ratings and lead arrangement. I am going to give you a brief detail about this component, so you don't have to go any where else to find information regarding this device. Let's get started.

Introduction to 2n7000

• 2n7000 is a uni-polar N-Channel Enhancement mode MOSFET which comes with terminals called drain source and gate.
• In this transistor, the input voltage applied at the gate terminal is used to control the conductivity between source and drain.
• The conducting path between source and drain is called channel whose length can be controlled by the input voltage at the gate terminal.

• As it is an enhancement mode MOSFET, it is assumed as OFF i.e. it doesn't conduct under normal operating condition when Vgs=0. It will start conducting when some input voltage is applied at the gate terminal.
• 2n7000 is a 60 V device and comes in TO-92 enclosure. Sometimes, it is termed as FETlinton and it an N-Channel MOSFET, so here conduction is carried out by the movement of electron rather than holes.
• It is a voltage controlled device which is widely used in place of other BJT(Bipolar junction transistors).
• However, it has many advantages over BJTs, as it requires no biasing for gate i.e. gate draws no current however, we need small surge current in order to charge the capacitance at gate terminal.
• It comes with high impedance and insulated gate, sometimes it is referred as IGFET(Insulated Gate Field Effect Transistor).

• As gate draws no current so it doesn't need any current limiting resister at the input of the gate terminal. However, protection gate resistor is required for the 2n7000 when it is used for the circuits that come with external gate vulnerability.

2n7000 Pinout

2n7000 is a uni-polar voltage controlled device which consists of three terminals. 1: Source 2: Gate 3: Drain  

• Gate is practically isolated from drain and source and it draws no current.
• There is an insulation layer that lies between the gate and the body of transistor.

Working of 2n7000

• In 2n7000, the conduction between source and drain is carried out by the movement of electrons.
• In this transistor, source and drain are made up of n-type material while its body and substrate is made up of p-type material.
• In 2n7000, gate is biased by applying the positive input voltage that will attract the electrons available in the p-type semiconductor substrate.
• The gate of this transistor is used composed of layer of poly-silicon.
• When we add Silicon dioxide on the layer of substrate it gives the typical metal oxide semiconductor construction.
• Silicon dioxide is a dielectric material so it will act as a capacitor where one of its electrodes will be replaced by the semiconductor.
• If we apply positive voltage at the MOS structure, it will alter the charge distribution in the semiconductor. With the addition of positive voltage, the holes present under the oxide layer will experience a force and allow the holes to move downward. The depletion region will be accumulated by the bound negative charges which are associated with acceptors atoms.
• The overdose of free electrons available in the p-type substrate increases the overall conductivity of channel, and constantly inverts the electrical properties of p-type substrate, allowing the substrate to change into n-type material.
• The positive voltage applied on the gate terminal control the movement of electrons. As we increase the positive change at the gate terminal the more it will attract the electron, hence resulting in widening the channel path between source and drain terminals. Thus, increasing the positive voltage at the gate terminal will increase the overall conductivity of the transistor.
• This N-Channel transistor is composed to reduce on state resistance and give efficient switching performance.

Maximum Rating 2n7000

Maximum rating of 2n7000 are given in the figure given below.

• Drain-Source voltage is 60 V while Drain current is 200 mA.
• Power dissipation is about 350 mW.
• If values are exceeded more than the given values, they can harm the device at large.

Difference between N-Channel MOSFET and BJT

• N-Channel MOSFET are unipolar devices and BJT are bipolar devices.
• BJT are current control devices while MOSFET are voltage controlled devices.
• In BJT, we need base current to control the large amount of current at emitter and collector. In MOSFET, no biasing is required at the gate side as it draws no current. However small initial current is needed to charge the capacitance of the transistor.

Applications

• 2n7000 is mostly used for low power switching applications.
• It is used as a driver for motors, relays and lamps.
• It is widely used in battery operated systems and solid state relays.
• High speed circuits use MOSFET 2n7000 as it requires no buffer.

That's all for today. I hope you have enjoyed the article. I always try my best to give you quality work that requires minimum effort from your side to digest this information completely. However, if still you need any kind of help, you can ask me in the comment section below, I'd love to help you in this regard. Thanks for reading the article. Stay Tuned!

Introduction to 2n4401

Hey Everyone! I hope you are doing great and having fun with your lives. I am back to give you a daily dose of information so you can grow and progress in your relevant field. Today, I am going to uncover the details on the Introduction to 2n4401. It is an NPN (negative-positive-negative) bipolar junction transistor (BJT) which is used for general purpose amplification and switching purpose. It consists of P doped semiconductor that exists between the two layers of N doped material. I'll give you a brief detail about this transistor so you don't have to go anywhere for finding the information regarding this transistor. You can also check the Introduction to 2n4402 which is a complementary PNP transistor of this NPN transistor. Let's get started.

Introduction to 2n4401

• 2n4401 is an NPN bipolar junction transistor which is used for general purpose amplification and switching purpose.
• It is called bipolar junction transistor because conduction is carried out by both charge carriers i.e electrons and holes, but majority charge carriers will be electrons.
• It mainly consists of three terminals called emitter, base, and collector.
• Small current present at the base side is used to control the large current at the emitter and conductor side.

• P layer of this transistor represents the base terminals while other two N layers represent emitter and collector respectively. Base is positive with respect to emitter.
• 2n4401 is actually a current control device where small current at the base side is used to control the large current at the emitter and collector side.
• When a positive voltage is applied at the base side, it gets biased and allows the current to flow from emitter to collector.
• The emitter emits the electrons which are then collected by the collector and base controls the number of electrons.
• A transistor is a combination of diodes joined back to back.

2n4401 Pinout

2n4401 is an NPN transistor which mainly consists of three terminals. 1: Emitter 2: Base 3: Collector

• Base side of this transistor is lightly doped while emitter side is heavily doped.
• When small current controls the large current at the emitter and collector, this process is used for amplification purpose.

Circuit Diagram of 2n4401

Circuit diagram of 2n4401 is shown in the figure below.

• The voltage at the collector side is more than the voltage at the base side.
• This transistor comes with three main configurations i.e common base configuration, common emitter configuration, and common collector configuration.
• Common emitter configuration is mainly used for amplification purpose because it exhibits the required voltage and power gain for amplification purpose.
• This configuration helps in increasing the input signal by 20dB which is nearly 100 times more than the input signal.
• Emitter current is the combination of base and collector current.
• Collector and emitter can be differentiated by their size and doping concentration. The emitter is highly doped while the collector is lightly doped.
• The forward current gain of the transistor can be denoted by beta ß which is a ratio between collector current and base current. This beta is actually an amplification factor which is a measure of current being amplified. Beta value ranges between 20 to 1000 but its standard value is 200. Beta is a ratio of two current so it has no unit.
• The current gain of this transistor is represented by alpha a which is a ratio between collector current and emitter current. Alpha value ranges between 0.95 to 0.99 and most of the times its value is considered as a unity.

Absolute Maximum Ratings of 2n4401

Absolute maximum ratings of 2n4401 is shown in the figure below.

• Collector-Emitter and Collector-Base voltages are 40 and 60 V respectively.
• If stresses are exceeded above these absolute maximum ratings, they can damage the device.
• Similarly, if stresses are applied for the extended period of time, they can affect the device reliability.

Difference between NPN and PNP transistors

• The main difference between NPN and PNP transistor is the availability of charge carriers. Electrons are majority charge carriers in case of NPN transistor while holes are majority charge carriers in case of PNP transistors.
• Most of the professional prefer NPN transistor over PNP transistor because conduction carried out by the mobility of electrons is better than conduction through mobility of holes.
• These NPN and PNP bipolar junction transistors are current controlled devices and are different than unipolar MOSFET that is a voltage controlled device.

Applications

• This transistor is mainly used for general purpose amplification.
• In many applications, this transistor behaves as a simple switch. When a voltage is applied at the base side, it gets biased and transistor behaves as an ON switch. When there is no voltage at the base side, it won't get biased and the transistor behaves as an OFF switch.

That's all for today. I hope you have enjoyed the article. I always try to give you information based on recent topics so you keep coming back for what we have to offer. If you feel skeptical or have any question, you can ask me in the comment section below. I'll try my best to help you in this regard according to best of my expertise. Stay tuned!

Introduction to 2n2905

Hey Everyone! I hope you all are doing great and enjoying life. I am back to give you daily dose of some valuable information so you can progress and grow in your relevant field. Today, I am going to unlock the details on the Introduction to 2n2905. It is  a PNP (Positive-negative-Positive) bipolar junction transistor (BJT) which is mainly used for general purpose and switching applications. In this transistor, N doped semiconductor exists between the two layers of P doped material. I am going to give you brief details about this transistor. Let's get started.

Introduction to 2n2905

• • 2n2905 is a PNP bipolar junction transistor which is mainly designed for general purpose, small signal and switching applications.
  • It comes in TO-39 casing and consists of three terminals called emitter, base and collector.
  • N side represents the base of the transistors while other two P layers represent emitter and collector respectively.
  • N represents the polarity at the base side which is negative and P represents the polarity at the emitter side which is positive.
  • In order to flow current, base must be negative with respect to emitter.

• As it is a bipolar junction transistor so conduction is carried out by both charge carriers i.e. electrons and holes but majority charge carriers will be holes.
• Collectors-Base junction will always be reverse biased so opposite polarity must be required at the collector side.
• Base is negative with respect to emitter and collector will be more negative with respect to base.
• Small current at the base side is used to control large current at the emitter and collector side but majority charge carriers will be holes.

2n2905 Pinout

2n2905 is a PNP transistor which mainly consists of three terminals. 1: Base 2: Collector 3: Emitter

• This transistor is considered as a current controlled device where small current at the base side is used to control large current at the emitter and collector side.
• Emitter is highly doped while base will be lightly doped.

Circuit Diagram of 2n2905

Circuit diagram of this transistor is shown in the figure below.

• Current at the emitter side is equal to the sum of current at the base and collector side.
• Main difference between emitter and collector is their size and doping concentration. Emitter is highly doped while collector is lightly doped.
• Conduction is carried out by movement of both electrons and holes but majority charge carriers will be holes which will be collector by the collector.

Absolute Maximum Ratings of 2n2905

Absolute maximum rating of 2n2905 is shown in the figure below.

• Power dissipation is about 600mW.
• Collector-Base voltage and Collector-Emitter voltage is -60 and -40 respectively.
• These are the stress ratings. It is important to note that if stresses are exceeded above these absolute maximum ratings, they can damage the device at large.
• Also, if these stresses are applied for extended period of time, they can effect the device reliability.

Difference Between PNP and NPN Transistors

• Main difference between NPN and PNP transistors is the medium used for conduction. Electrons are majority charge carriers in case of NPN transistors while holes are majority charge carriers in case of NPN transistors.
• Most of the professional intend to prefer NPN over PNP transistors because they think that conduction carried out by mobility of electrons is better than conduction by the mobility of holes.

Combination of NPN and PNP Transistors

• Combination of NPN and PNP transistors can be used in most applications.
• If NPN are combined with PNP transistors, they can be used to design a power amplifier circuit with ideal output.
• Combination of these transistors can be used in Class B amplifiers where both transistors are used to control the current flowing in both directions at any instant of time.
• In Class B amplifiers both NPN and PNP transistors function in a similar fashion. PNP transistors conduct for the negative half cycle of the transistor while NPN conducts for the positive half cycle of the transistor.
• This helps in getting the power at output load in both directions.
• Transistors are termed as Complementary transistors which use the combination of both NPN and PNP transistors of identical characteristics.

Applications

• These transistors are used for high speed switching applications.
• Military and other high reliability driver applications involve these transistors.

That's all for today. I hope you have enjoyed the article. If you have any question, you can ask me in the comment section below. Your suggestion and feedback will be highly appreciated as it will allow us to provide you quality work that resonates with your needs and expectations. Stay Tuned!

Introduction to 2n2907

Hey Guys! Hope you are doing great. I always try to fill your appetite with relevant information you can excel and grow in your field. Today, I am going to unlock the details on the Introduction to 2n2907. It is basically a PNP bipolar junction transistor (BJT) which is mainly designed for switching and low power general purpose amplification applications. It has an ability to operate at very high speed and moderate temperature. I'll try to cover every aspect related to this transistor, so you don't have to go anywhere else for finding the information regarding this transistor. You can also check Introduction to 2n2222 which is complementary NPN transistor of this PNP transistor. Let's hop on the board and explore what it does and what are its main applications. Let's get started.

Introduction to 2n2907

• 2n2907 is a PNP bipolar junction transistor which is mainly used for low power general purpose amplification and switching application.
• In this transistors, N layers is composed of semiconductor material which exists between the two layers of P type material.
• N side represent the base side and polarity will be negative at the base side.
• P side represents the emitter terminal and polarity at the emitter side will be positive.
• In order to conduct, base must be negative with respect to emitter.
• And collector-base junction will always be reverse biased so polarity must be reversed at the collector side. Collector is more negative with respect to base terminal.

• This transistor is a bipolar device, so conduction will be carried out by both charge carriers i.e. holes and electrons but majority charge carriers will be holes in this case.
• PNP and NPN transistors work in a similar fashion with some exceptions i.e. voltage polarities and current directions will be reserved in case of PNP transistors as compared to NPN transistors.
• Base is negative is PNP transistor while it is positive in case of NPN transistors.
• These transistors are termed as current controlled device because small current at the base side is used to control large current at the collector and emitter side.
• When we apply voltage at the base side it gets biased, and it allows the electrons to flow from emitter to collector.
• In case of PNP transistor, current will flow from emitter to collector but majority charge carriers will be holes which are then collected by the collector.

2n2907 Pinout

This transistors mainly contains three terminals 1: Emitter 2: Base  3: Collector

• The ability of base current to control large current at the emitter and collector side is used for amplification purpose.
• Emitter will be highly doped and base will be lightly doped.
• Collector and emitter are different to each other with respect to their size and doping concentration. Collector will also be lightly doped as compared to emitter.

Circuit Diagram of 2n2907

Following figure shows the circuit diagram of 2n2907.

• Current at the emitter side is the combination of base and emitter current.
• This transistor comes in TO-92 casing and can be manufactured with different pin configurations.
• In case of PNP transistor, holes are transferred internally which then allow the current to flow in the external circuit. In case of NPN transistors, electrons flow externally and conduction is carried out from emitter to collector.
• Both NPN and PNP transistor work in a same fashion but medium used for conduction is different. Most of the professionals prefer NPN transistors over PNP transistors because they consider, conduction through mobility of electrons is better than conduction through mobility of holes.
• However, both transistors come with a lot of advantage and can be used for similar applications.

Absolute Maximum Ratings of 2n2907

Following are the absolute maximum ratings of 2n2907

• These are the stress rating above which device can be completely damaged.
• Similarly, if stresses are applied for extended period of time, they can harm the device reliability. It is advised to keep the operating conduction within the range of absolute maximum ratings.

Combination of NPN and PNP Transistors

• Both NPN and PNP transistors are used in combination with each other.
• These transistors are incorporated perfectly to design a power amplifier output circuit which helps in generating the ideal output.
• Transistors that used combination of NPN and PNP transistos are called Complementary Transistors.
• Both NPN and PNP transistors  are widely used in Class B amplifiers where both transistors help in controlling the current flowing in both directions at any time.

Applications

• This transistor is mainly used for switching and linear amplification.
• Analog amplification also involve this type of transistor.

That's all for today. I always try to give information in sorted form so it makes a direct connection with the reader and makes it easy for him the digest the information without much effort. If you feel any doubt or have any question you can ask me in the comment section below. I'd love to help you according to best of my expertise. Stay tuned!

Introduction to 2n5401

Hey Fellas! I hope you are doing great and getting most out of your lives. Today, I am going to uncover the details on the Introduction to 2n5401. It is a PNP(positive-negative-positive) bipolar junction transistor which comes in TO-92 casing. It consists of N doped semiconductor that exists between the two layers of P doped material. It is useful for the applications where regulated negative voltage is required at a modest current level. I'll give you brief details about this amplifier transistor. Let's get started.

Introduction to 2n5401

• 2n5401 is a PNP bipolar junction transistor, also known as amplifier transistor, that comes with collector-emitter voltage of 150V and mostly used for amplification purpose.
• In order to operate this transistor properly in the circuit, no external components are required.
• Most of the professionals prefer this device over common resistor/zener approach.
• It exhibits current limiting and thermal shutdown which make the device substantially rugged.
• It consists of three terminals named as emitter, base and collectors.
• Small current at the base side is used to control the large current at the emitter and collector side.

• It is a bipolar junction transistor where conduction is carried out by both electrons and holes but majority charge carriers are holes.
• As it a PNP transistor so P side represents the polarity at the emitter side which is positive and N represents the polarity at the base side which is negative.
• Base will always be negative will respect to emitter.

2n5401 Pinout

2n5401 is a PNP transistor which mainly consists of three terminals.   1: Emitter 2: Base 3: Collector 

• Conduction is carried out from emitter to collector and majority charge carriers will be holes rather than electrons.
• Transistor works in a way, it allows small current at the base side to control large current at the emitter or collector side.

2n5401 Circuit Diagram

Circuit symbol of 2n5401 is shown in the figure below.

• Emitter polarity will be positive as compared to base and collector.
• Conduction is carried out when base will be negative as compared to emitter.
• Emitter current is the sum of current at the base and collector side.
• PNP works in a similar way like NPN transistors with some exceptions. In PNP transistors, directions of current and voltage polarity will be reversed and majority charge carriers will be holes.
• Some professionals NPN transistors over PNP transistors, because conduction through mobility of electrons is better than conduction through mobility of holes.

Absolute Maximum Ratings of 2n5401

Following shows the absolute maximum ratings of 2n5401.

• Collector-Emitter voltage and Collector-Base voltages are 150 and 160 V respectively.
• Total power dissipation at the collector side is 625 mW.
• These are the stress rating. If stresses are exceeded from given absolute maximum ratings, they can damage the device.
• Similarly, if stresses are applied for extended period of time, they can effect the device reliability.

Transistors as a Matched Switch

• PNP transistors widely replace NPN transistors in some applications because both exhibit same properties with some exception i.e. direction of current and polarities of voltage will be reversed.
• Both PNP and NPN transistor can be used for switching applications.
• PNP and NPN transistors can be incorporated in a same circuit to design the power amplifier circuits.
• Class-B amplifiers are incorporated with two pairs of PNP and NPN transistors where both transistors are used to control the current flowing in both directions.
• Transistors are termed as "Complementary Transistors" which use both pair of PNP and NPN transistors.
• Both NPN and PNP transistors work in a similar fashion i.e. PNP conducts for the negative half cycle of the transistor while NPN conducts for the positive half cycle of the transistor. This process helps in flowing the power at the load output in both directions.
• Main difference between PNP and NPN transistor is that current will sink to its base side in case of PNP transistor while current will source from base to the transistor in case of NPN transistor.

Applications

• It is mainly used for general purpose amplification and switching purpose.
• Telephony applications involve these NPN transistors.
• These transistors cannot be used in life support appliances because any defect in these transistors can cause the personal injury.

That's all for today. I hope you have enjoyed the article. However, if still you feel skeptical or have any question, you can ask me in the comment section below. I'll try my best to help you according to best of my expertise. We always aspire to give you knowledge that resonates with your needs and requirements. Stay tuned!

Introduction to 2sa1015

Hello Fellas! I aspire a happy and prosperous life for you. We always enjoy when you keep coming back for what we have to offer. Today, I am going to unlock the details on the Introduction to 2sa1015. It is a low frequency PNP (positive-negative-positive) bipolar junction transistor which is mainly used for general purpose amplification. It mainly consists of N doped semiconductor which exists between the two layers of P doped material. I'll try to cover every aspect of this transistor so you don't have to go anywhere else for finding the information regarding this transistor. Let's hop on the board and explore the details on this PNP transistor.

Introduction to 2sa1015

• 2sa1015 is a PNP low frequency transistor which is mainly used for general purpose amplification.
• It mainly consists of three terminals called emitter, base and collector.
• N layer of this transistor represents the base side while other two P layers represent emitter and collector receptively.
• Base is always negative with respect to emitter.
• As it is bipolar junction transistor so conduction is carried out by both charge carriers i.e. electrons and holes, but majority charge carriers will be holes.

• When negative voltage is applied at the base side it gets biased and current starts to flow from emitter to collector.
• It is referred as a current control device because small current at the base side is used to control the large current at the emitter and collector side.
• In this PNP transistors P layer shows the polarity applied at the emitter side which is positive while N side shows the polarity at the base side which is negative.
• Current will only flow when base is negative with respect to emitter.

2sa1015 Pinout

This PNP transistor mainly consists of three terminals. 1: Emitter  2: Base  3: Collector

• Base side is lightly doped while emitter side is heavily doped.
• Difference between emitter and collector is their size and doping concentration. Emitter is heavily doped while collector is lightly doped.

Circuit Diagram of 2sa1015

Following figure shows the circuit diagram of 2sa1015 PNP transistor.

• Current at the emitter side is the sum of current at base and collector side.
• Current will flow from collector to emitter and majority charge carriers will be holes.
• This transistor is referred as a current controlled device where small current at the base side is used to control large current at the emitter and collector side.

Absolute Maximum Ratings of 2sa1015

Following figure shows the absolute maximum ratings of 2sa1015.

• Collector-Base and Collector-Emitter voltage is -50.
• And maximum collector power dissipation is 400 mW.
• These are the stress rating above which device can damage.
• If stresses are applied for extended period of time, they can effect the device reliability.

Difference between PNP and NPN Transistors

• Both NPN and PNP works in a similar way with some exceptions. Voltage polarity and current directions will be reversed in case of PNP transistors as compared to NPN transistors.
• In case of PNP transistor, current will sink to its base side while in case of NPN transistor, base sources current to the transistor.
• Most of the professionals prefer NPN transistor over PNP transistors because they consider conduction through mobility of electrons is better than conduction through mobility of holes.

Transistors as a Matched Switch

• Both NPN and PNP transistors behave like a switching devices.
• You might come across an idea what is the purpose of using PNP transistors while there are already tons of NPN transistors out there which can be used for amplification. However, when PNP transistors are used in combination with NPN transistors, they help in designing the perfect power amplifier circuit.
• Class B amplifiers widely use combination of both NPN and PNP transistors where both transistors are used to control the current flowing in both directions at any time.
• Transistors are called complementary transistors which use both NPN and PNP transistors of same characteristics.
• In Class B-amplifiers, both NPN and PNP transistors work in a same fashion i.e. NPN transistors conducts for the positive half cycle and PNP transistor conducts for the negative half cycle of the transistor. This results in flowing the power at the load output in both directions.

Applications

• These transistors are widely used for voltage and power amplification.
• When these transistors are incorporated with NPN transistors, they construct a perfect bond and current starts to flow from both sides of NPN and PNP transistors.

I always try to give the information that builds a direct connection with reader and makes it easy for the reader to grab the concept and implement it. However, if you have better approach you think can work, you can suggest me in the comment section below. If you have any question or query you can ask me, I'd love to help you according to best of my expertise. Stay tuned!