The Engineering Projects

IRF2807 MOSFET Datasheet, Pinout, Features & Applications

Hello Folks! Hope you’re well today. Happy to see you around. In this post today, I’ll walk you through the Introduction to IRF2807. The IRF2807 is an N-channel MOSFET made up using advanced process technology to obtain extremely low on-resistance. This device is fully avalanche and is mainly used in fast switching applications. It comes in TO-package which is universally accepted for commercial-industrial applications. I suggest you buckle up as I’ll detail the complete Introduction to IRF2807 covering datasheet, pinout, features, and applications. Let’s dive in.

Introduction to IRF2807

• The IRF2807 is an N-channel MOSFET that comes with a power dissipation of around 200W.
• This device is mainly used for fast switching applications and low thermal resistance and low package cost makes this advice an ideal pick for a range of industrial applications.
• The IRF2807 contains three terminals called the gate, drain, and source. At times, this is considered as a four-terminal device when the body is taken as the fourth terminal of the device.

• The electrons enter the channel through the source terminal while they leave the channel through the drain terminal. The gate terminal plays an important role in the biasing of the device and it stands between the source and drain terminals. The voltage on the gate terminal controls the channel width.
• This IRF3710 MOSFET comes with extremely low ON resistance, making this device preferable for low drop switching applications. The low drop is responsible for low power loss, thus guarantees greater efficiency.
• The MOSFETs are termed the voltage-controlled device in opposed to bipolar junction transistors that are current-controlled devices and contain terminals emitter, base, and collector.

• The MOSFET works in two modes i.e. depletion mode and enhancement mode.
• And the behavior of electrons is different in both these modes. During the enhancement when there is no voltage across the gate terminal, there will be no current across the channel. While when voltage is applied across the gate terminal, the conductance of the device will increase.
• During depletion mode, however, when no voltage is applied across the gate terminal, there is conductance across the channel. While, when the voltage is applied, the channel conductivity will decrease.
• The MOSFETs are mainly divided into two main types i.e. P-channel MOSFET and N-channel MOSFET. The IRF2807 belongs to the N-channel MOSFET where conductance is carried out by the movement of electrons.
• In P-channel MOSFETs conductance is carried out by the movement of holes. The movement of electrons is better than the movement of holes, making N-channel MOSFET better than P-channel MOSFETs for a range of applications.

IRF2807 Datasheet

Before you embed this device into your electrical project, it’s wise to go through the datasheet of the component that features the main characteristics of the device. You can download the datasheet of IRF2807 by clicking the link below.

IRF2807 Pinout

The following figure represents the pinout diagram of IRF2807. The IRF2807 comes with three terminals named gate, drain, and source.

Pin Description of IRF2807
Pin No.	Pin Description	Pin Name
1	Used for biasing the device	Gate
2	Electrons leave the channel through this terminal	Drain
3	Electrons enter the channel through this terminal	Source

IRF2807 Features

The following are the main features of IRF2807.

• Type = N-Channel MOSFET
• Department = Transistors
• Category = IRF series
• Power Dissipation (Ptot) = 200W
• Fully avalanche rated
• Drain-Source Volt (Vds) = 100V

• Advanced process technology
• Gate-Source Volt (Vgs) = 20V
• Ultra-low on-resistance
• Dynamic dv/dt rating
• Drain Current (Id): 58A
• Package = TO-220

IRF2807 Applications

The IRF2807 is used in the following applications.

• Used in USP
• Employed in instrumentation projects
• Used in embedded projects
• Employed in Inverters
• Incorporated in switching applications

That’s all for today. Hope you’ve got a brief insight into the Introduction to IRF2807. If you have any questions, you can approach me in the section below. I’m ready and happy to assist you in the best way I can. Feel free to share your feedback and suggestions around the content we share so we keep coming back with quality content customized to your exact needs and requirements. Thank you for reading the article.

IRF740 MOSFET Datasheet, Pinout, Features & Applications

Hi Friends! I welcome you on board. Thank you for clicking this read. In this post today, I’ll detail the Introduction to IRF740.

The IRF740 is an N-channel power MOSFET used for extremely fast switching applications. It comes with a power dissipation of around 125W and can support loads up to 400V. The maximum drain current of this device is 10A and the drain-source capacitance is 1450pF.

I suggest you read this post till the end as I’ll describe the complete Introduction to IRF740 covering datasheet, pinout, features, and applications.

Introduction to IRF740

• The IRF740 is an N-channel MOSFET that comes with 125W power dissipation. This is the power device that dissipates during the working of this component.
• This device is mainly used for fast switching applications and comes with ultra-low on-resistance of 0.55 Ohms which is the resistance between drain and source terminals.
• The IRF740 contains three terminals named source, drain, and gate. Sometimes it is termed as a four-pin device when the body is also considered as its terminal.

• The gate terminal is located between the source and drain terminals and is the area used for biasing of the device. While the drain terminal is the location from where electrons leave the channel and the source terminal is the location from where electrons enter the channel.

• The MOSFETs are mainly categorized into two main types named N-channel MOSFET and P-channel MOSFET. This device IRF740 belongs to the N-channel MOSFET where electrons are responsible for the current flow inside the device as opposed to P-channel MOSFETs where holes are the charge carriers responsible for conductance inside the device.
• It is important to note that the movement of the electrons is better than the movement of holes inside the MOSFET. The reason N-channel MOSFETs are preferred over P-channel MOSFETs in a range of applications.
• The MOSFET operates in two modes i.e. depletion mode and enhancement mode.
• The nature of electrons is opposite in both these modes in N-channel MOSFETs. During the enhancement mode when there is no voltage, there will be no current across the channel. However, when voltage is applied across the gate terminal, it increases the movement of electrons and thus increases the conductance.
• On the other hand, during depletion mode, when there is no voltage applied across the gate terminal, there is current across the channel. However, when the voltage is applied across the gate terminal, it will decrease the movement of electrons and hence decrease the channel conductivity.

IRF740 Datasheet

Before you apply this device to your electrical project, it’s wise to go through the datasheet of the device that features the main characteristics of the component, helping you better understand the absolute maximum ratings of this device. Click the link below to download the datasheet of IRF740.

IRF740 Pinout

The following figure shows the pinout diagram of IRF740.  The IRF740 comes with three terminals i.e. gate, drain, and source.

Pin Description of IRF740
Pin No.	Pin Description	Pin Name
1	Used for biasing the device	Gate
2	Electrons leave the channel through this terminal	Drain
3	Electrons enter the channel through this terminal	Source

IRF740 Features

The following are the main features of IRF740.

• Type = N-Channel Power MOSFET
• Category = IRF series
• Capable of fast switching
• Power Dissipation = 125W
• Continuous Drain Current (ID) = 10A
• Gate threshold voltage (VGS-th) = 10V (limit = ±20V)
• Drain to Source Breakdown Voltage = 400V
• Drain Source Resistance (RDS) = 0.55 Ohms

• Rise time is 27ns and fall time is 24nS
• Junction temperature = 150C
• Maximum Drain current = 10A
• Drain-source capacitance = 1450pF
• Available package = TO-220

IRF740 Applications

The IRF740 is employed in the following applications.

• Used in USP
• Employed in instrumentation projects
• Used in switching applications
• Used in embedded projects
• Employed in Inverters

That’s all for today. Hope you’ve got a clear idea about this device IRF740. If you have any questions, you can pop your comment in the section below. I’m ready and happy to help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share so we keep sharing quality content tailored to your exact needs and requirements. Thank you for reading the article.

2SC1061 NPN Transistor Datasheet, Pinout, Features & Applications

Hello Friends! Hope you’re well today. I welcome you on board. In this post today, I’ll walk you through the Introduction to 2SC1061.

2sc1601 is an NPN bipolar junction transistor used for switching and amplification purposes. During the amplification process, the small input current across one pair of terminals is used to generate a large output current across other pairs of terminals.

2sc1601 is known as a semiconductor device made of silicon material. This is a bipolar junction transistor where two charge carriers (electrons and holes) play an important role in the conductivity inside the transistor. As this is an NPN transistor so here major charge carriers are electrons while holes are the minority carriers.

I suggest you buckle up as I’ll detail the complete Introduction to 2SC1061 covering datasheet, pinout, features, and applications. Let’s dive in.

Introduction to 2SC1061

• 2sc1601 is a power transistor used for amplification and switching purposes. It comes with two junctions i.e. base-collector junction that is reverse biased and base-emitter junction that is forward biased.
• This bipolar junction transistor belongs to the NPN transistor family where electrons are the major charge carriers.

• This chip is made of three layers where one p-doped layer stands between the two n-doped layers.
• 2sc1601 contains three terminals named emitter, base, and collector. These terminals are used for the external connection with the electrical circuit.

• Both collector-emitter and collector-base voltages are 50V while the emitter-base voltage is 4V which is the amount of voltage needed to bias the transistor and initiate the transistor action.
• The DC current gain ranges from 35 to 320 which is the value of current this transistor can amplify. This current gain is based on the current and voltage characteristics of the transistors.

2SC1061 Datasheet

It is wise to go through the datasheet before you incorporate this device into your project. The datasheet comes with the main characteristics of the device, helping you better understand the absolute maximum ratings of the device. Click the link below to download the datasheet of 2sc1601.

2SC1061 Pinout

The 2sc1061 contains three pins named: 1: Base 2: Collector 3: Emitter The following figure shows the pinout diagram of transistor 2sc1061.

• All these terminals contain different doping concentrations. The collector pin is lightly doped while the emitter terminal is highly doped compared to other terminals.
• The collector pin is 10-times less doped compared to the base pin. Moreover, the emitter side carries the entire current of the device. Because current on the emitter side is the combination of both collector current and base current.
• Plus, NPN transistors are preferred over PNP transistors for a range of applications because the mobility of electrons is far better and quicker than the movement of holes.

2SC1061 Working Principle

• The working of this transistor is simple and straight forward. When a positive voltage is applied at the base terminal, it gets biased and the current starts flowing from the collector to the emitter pin.
• Both electrons and holes play a vital role in the conductivity process inside the transistor but electrons are majority carriers and holes are minority carriers.
• It is important to note that bipolar junction transistors are not symmetrical components. Which projects that exchanging the collector and emitter terminals will keep the transistor from working in forward active mode and as a result, both terminals will start working in the reverse active mode. This can influence the values of common-emitter current gain and common-base current gain.

• Different doping concentrations of both emitter and collector terminals are responsible for the lack of symmetry inside the transistor.
• The Common-emitter current gain of this device is 35-320 in this transistor, which is denoted by beta and the common-base current gain is always less than one which is denoted by alpha.

2SC1061 Alternatives

The complementary PNP transistor to this NPN transistor is 2SA671. And the equivalent to 2SC1061 is MJC32C. Double-check the pinout of the alternative before incorporating it into your project as the pinout of alternative might differ from the pinout of 2SC1061.

2SC1061 Power Ratings

The following table shows the absolute maximum ratings of 2sc1601.

Absolute Maximum Ratings of 2SC1061
Pin No.	Pin Description	Pin Name
1	Collector-emitter voltage	50V
2	Collector-base voltage	50V
3	Base-emitter voltage	4V
4	Collector current	3A
5	Power dissipation	25W
6	Base current	0.5A
7	Operating and storage junction temperature range	-55 to 150C

• The collector-emitter and collector-base voltages are 50V. And total power dissipation is 25W which shows the amount of power released during the functioning of this device. The junction temperature and storage temperature ranges from -55 to 150C.
• When you’re working with the component, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, they can badly damage the device, thus the entire project.
• Moreover, don’t apply these ratings more than the required time, else they can affect device reliability.

2SC1061 Applications

2sc1061 is employed in the following applications.

• Employed to support loads under 3A.
• Incorporated in modern electronic circuits.
• Used in Bistable and Astable multivibrators circuit.
• Used in voltage regulator circuits.

• Used for switching and amplification purpose.
• Employed in the switched-mode power supply.
• Installed in the motor control circuit.
• Used in H-bridge circuits.

2SC1061 Physical dimensions

The following figure represents the physical dimensions of the 2sc1061 device.

By checking the physical dimensions of this component you can evaluate the space required for your circuit and install the device accordingly.

That’s all for today. Hope you find this article helpful. If you are unsure or have any questions, you can pop your comment in the section below, I’m ready and happy to assist you the best way I can. Feel free to share your valuable suggestions and feedback around the content we share so we keep coming back with quality content customized to your exact needs and requirements. Thank you for reading the article.

IRF3710 MOSFET Datasheet, Pinout, Features & Applications

Hello Guys! Hope you’re well today. I welcome you on board. In this post today I’ll describe the Introduction to IRF3710.

The IRF3710 is an N-channel MOSFET made up using advanced process technology. It is mainly used for fast switching purposes and comes with extremely low on-resistance. It is a fully avalanche-rated device with a gate-source voltage of around 20V.

I suggest you read this entire post till the end as I’ll detail the complete Introduction to IRF3710 covering datasheet, pinout, features, and applications. Let’s jump right in.

Introduction to IRF3710

• The IRF3710 is an N-channel MOSFET mainly employed for fast-switching purposes.
• It is manufactured using advanced process technology and comes with very low on-resistance.
• This device is composed of three terminals a drain, gate, and source. Sometimes it is also called a four-terminal device where the body is also considered as the terminal of the device.
• The electrons enter the channel through the source terminal and they exit the channel through the drain terminal. While the gate terminal is used for biasing the device.

• The gate pin is located between the source and drain pin. The voltage on the gate pin is used to control the channel width.
• This IRF3710 MOSFET carries low ON resistance, making it a suitable pick for low drop switching applications. The low drop leads to low power loss, hence ensures greater efficiency.

• The MOSFETs are considered the voltage-controlled device in contrast to bipolar junction transistors that are current-controlled devices and comes with terminals base, emitter, and collector.
• The MOSFETs are mainly divided into two types i.e. N-channel MOSFET and P-channel MOSFET.
• This chip IRF3710 falls under the category of N-channel MOSFET where current is carried out by the movements of electrons as opposed to P-channel MOSFET where holes are the major charge carriers. The movement of holes is slow compared to the movement of electrons, making N-channel MOSFETs better than P-channel MOSFET for any electrical project.
• The MOSFET works in depletion mode and enhancement mode.
• During the enhancement when there is no voltage, there will be no current across the channel. While when voltage is applied across the gate terminal, it increases the conductance.
• During depletion mode, on the other hand, when no voltage is applied across the gate terminal, there is current across the channel. However, when the voltage is applied across the gate terminal, it will decrease the channel conductivity.

IRF3710 Datasheet

Better read the datasheet of the component before incorporating it into your electrical project. The datasheet covers the main characteristics of the device. Click the link below to download the datasheet of IRF3710.

IRF3710 Pinout

The following figure shows the pinout diagram of IRF3710. IRF3710 contains three terminals… named gate, drain, and source.

Pin Description of IRF3710
Pin No.	Pin Description	Pin Name
1	This terminal used for biasing the device	Gate
2	Electrons leave the channel through this terminal	Drain
3	Electrons enter the channel through this terminal	Source

IRF3710 Features

The following are the main features of IRF3710 MOSFET.

• Type = N-Channel
• Category = IRF series
• Department = Transistors
• Drain-Source Volt (Vds) = 100V
• Advanced process technology
• Gate-Source Volt (Vgs) = 20V
• Ultra-low on-resistance

• Drain Current (Id): 57A
• Fast switching
• Power Dissipation (Ptot) = 200W
• Fully avalanche rated
• Dynamic dv/dt rating

IRF3710 Applications

The IRF3710 is used in the following applications.

• Used in switching applications
• Used in USP
• Employed in Inverters
• Used in embedded projects
• Employed in instrumentation projects

That’s all for today. Hope you find this article helpful. If you have any questions, you can pop your comment in the section below. I’d love to help you the best way I can. You’re most welcome to share your valuable feedback and suggestions around the content we share. They help us create quality content customized to your exact needs and requirements. Thank you for reading the article.

IRF1010E MOSFET Datasheet, Pinout, Features & Applications

Hi Guys! I welcome you on board. Happy to see you around. In this post today, I’ll walk you through the Introduction to IRF1010E.

The IRF1010E is an N-channel power MOSFET that comes with low turn-on resistance and is mainly used in fast-switching applications. The maximum power dissipation of this device is 170W and the pulsed drain current is quite high i.e. 330A.

I suggest you buckle up as I’ll detail the complete Introduction to IRF1010E covering datasheet, pinout, features, and applications. Let’s get started.

Introduction to IRF1010E

• The IRF1010E is an N-channel power MOSFET mainly employed for fast-switching applications.
• This chip is a three-terminal device with terminals drain, source, and gate. It is a voltage-controlled device as opposed to a bipolar junction transistor that is a current-controlled device and comes with terminals: base, collector, and emitter.

• The gate terminal in IRF1010E is used for the biasing of the device while the source terminal is the area from where electrons enter the channel while the drain terminal is the area from where electrons leave the channel.
• The gate terminal stands between the source and drain terminals. And the channel width is handled by the voltage on the gate terminal.
• The main principle of this device is based on controlling the voltage and current between drain and source terminals. The MOS capacitor is the key component that plays a crucial role in the functionality of the device.

• The MOSFET works in two ways i.e. in depletion mode and enhancement mode. During depletion mode, when no voltage is applied across the gate terminal, there is maximum conductance across the channel. However, when the voltage is applied across the gate terminal, it results in decreasing the channel conductivity.
• While, on the other hand, the enhancement mode works exactly opposite to the depletion region. Here when there is no voltage, there is no conductance across the channel. While when voltage is applied, it results in increasing the conductance.
• There are two types of MOSFET available in the market i.e. P-channel MOSFET and N-channel MOSFET. This device IRF1010E falls under the category of N-channel MOSFET where electrons flow as the charge carriers in contrast to P-channel MOSFETs where holes are the major charge carriers.
• This IRF1010E MOSFET comes with low turn-ON resistance, making it a right fit for low-drop switching applications. The low drop results in low power loss, hence ensuring greater efficiency. This device is also used for high-efficiency applications.

IRF1010E Datasheet

It is wise to go through the datasheet before incorporating this device into your project. This datasheet features the main characteristics of the component. Click the link below to download the datasheet of IRF1010E.

IRF1010E Pinout

The following figure represents the pinout diagram of IRF1010E.   The following table details the pin description of each pin embedded on the chip.

IRF1010E Features

The following are the main features of IRF1010E.

• Developed with advanced process technology
• Used in Fast switching
• Fully avalanche rated
• Operating Temperature Max. = 175ºC

• The voltage across GATE and SOURCE Max. = 20 V
• Continuous current allowed through DRAIN Max. = 81A
• The voltage across DRAIN and SOURCE Max. = 60V
• It’s a Fifth generation HEXFET
• Pulsed DRAIN current Max. = 330A
• Power dissipation Max. = 170Watt

IRF1010E Alternatives

The following are the alternatives to IRF1010E.

• IRFB4110
• IRFB4310Z
• IRFB4115
• IRFB4410
• IRF1407
• IRFB4110G
• IRFB4310ZG

Double-check the pinout of the alternatives before incorporating them into your project as the pinout of the alternatives might differ from the pinout of IRF1010E.

IRF1010E Applications

This device is used in the following applications.

• Employed in speed control units
• Incorporated in PWM applications
• Used in Relay drivers
• Employed in Switch mode power supply
• Used in Lighting systems
• Used in any switching applications

That’s all for today. I hope you find this article helpful. If you have any questions, you can approach me in the section below. I’ll try to help you the best way I can. You’re most welcome to share your valuable feedback and suggestions around the content we share so we keep producing quality content customized to your exact needs and requirements. Thank you for reading the article.

CA3130 MOSFET BiMOS Op-Amp Datasheet, Pinout, Features & Applications

Hi Everyone! Hope you’re well today. I welcome you on board. In this post today, I’ll walk you through the Introduction to CA3130.

The CA3130 is a BiMOS Operational Amplifier that comes with MOSFET at the output. The term BiMOS suggests that it projects the advantage of both Bipolar and CMOS op-amp technology.

This IC comes with high bandwidth due to bipolar op-amps and consumes less current due to CMOS op-amp, making it a perfect fit for mobile jammers and voltage follower circuits.

I suggest you read this post all the way through as I’ll detail the complete Introduction to CA3130 covering datasheet, pinout, features, and applications. Let’s get started.

Introduction to CA3130

• The CA3130 is a BiMOS Operational Amplifier that contains MOSFET at the output. This chip consumes less current and features high bandwidth.
• This device has high input impedance due to MOSFETs which implies that when an output voltage of the sensor is connected to the inverting or non-inverting terminals of the op-amp, the output voltage from the sensor will not be disturbed since the op-amp will not act as a load to the sensor.

• If you’re looking for a device with high input impedance, less power consumption, and high bandwidth, this chip might be the answer.

• CA3130 is an eight-terminal electronic IC that comes with a Common Mode Rejection Ration (CMRR) of 80dB.
• It is widely used in frequency generators and noise detectors.
• The input terminal current of this device is 1mA and the supply current is 10mA.
• The CA3130 features inverting and non-inverting pins like other op-amps. If the voltage at the non-inverting pin is high, the output across the inverting pin will be high, otherwise, it will be low.
• Pins 1 & 5 are offset null pins used to nullify the offset produced when two input pins are combined. When the input pins of the op-amp are combined with each other, the voltage at the output should be zero. But no operational amplifier is ideally perfect. So when two inputs are combined together, it results in the offset. The offset null pins are used to null that effect.
• Pin 8 is called Strobe that is mainly used to turn off the output stage. It is also employed for phase compensation in comparators.

CA3130 Datasheet

Before you incorporate this device into your electrical project, it’s wise to go through the datasheet of the device that features the main characteristics of the component. Click the link below and download the datasheet of CA3130.

CA3130 Pinout

The following figure shows the pinout diagram of CA3130. The following table shows the pin description of each pin incorporated on the chip.

Pin Description of CA3130
Pin No.	Pin Description	Pin Name
1,5	When the input pins of the op-amp are combined with each other, the voltage at the output should be zero. But no operational amplifier is ideally perfect. So when two inputs are combined together, it results in the offset. The offset null pins are used to null that effect.	Offset Null Pins
2	The Inverting pin is also given a fixed voltage which is compared with the (IN+)	Inverting Input (IN-)
3	The Non-Inverting Pin of the comparator gives a variable  voltage to compare	Non-Inverting Input (IN+)
4	This pin is connected to the ground of the system (Negative voltage can also be used)	Ground (VCC-)
6	This is the output pin of the op-amp	Output
7	This VCC pin offers the operating voltage for the Op-Amp. For CA3130 it is up to +16V	VCC+
8	Allows you to turn off the output stage	Strobe

CA3130 Features

• Op-amp laced with MOSFET at the output
• Input Terminal current = 1mA
• Wide power supply Range i.e. for single supply – 5V to 16V and for dual supply – ±2.5V to ±8V
• Sink current Max. = 20mA
• Source current Max. = 22mA

• Output Voltage Max. = 13.3V
• Supply current = 10mA
• Common Mode Rejection Ration (CMRR) = 80dB

CA3130 Alternatives

The following are the alternatives to CA3130.

• LM311
• LM324
• LM358
• LM741
• LM339

Check the pinout of the alternatives before incorporating them into your electrical project as the pinout of the alternatives might differ from the pinout of the CA3130.

CA3130 Applications

The CA3130 is used in the following applications.

• Incorporated in DAC circuits
• Used in voltage follower circuits
• Employed in mobile jammers
• Employed in Oscillator circuits
• Used in frequency generator/distorter
• Used in Peak Signal/Noise detectors

That’s all for today. Hope you find this article helpful. If you have any questions, you can pop your comment in the section below. I’d love to help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share so we keep coming back with quality content customized to your exact needs and requirements. Thank you for reading the article.

INA219 Current Sensor Module Datasheet, Pinout, Features & Applications

Hi Friends! Hope you’re well today. I welcome you on board. Today, I’ll walk you through the Introduction to INA219.

The INA219 is a current sensor module that incorporates the I2C protocol for submitting the data obtained through sensing current, voltage, and power. It is a bi-directional zero drift current/ power sensing module mainly used in digital multimeters and power profilers.

I suggest you read this post all the way through as I’ll detail the complete Introduction to INA219 covering datasheet, pinout, features, and applications. Let’s get started.

Introduction to INA219

• INA219 is a current/power sensor module mainly employed to sense the power, voltage or current where up to 128 samples can be averaged together to get filtering in noisy environments. This data is then submitted to a microcontroller using the I2C bus.

• This device features an I2C protocol mainly used to transmit data between devices. The I2C protocol comes with two wires SDA and SCL. The SDL is a serial data line that carries the data while SCL is a serial clock line that carries the clock signal and ensures the synchronization of data transfer over an I2C bus.

• In the I2C protocol, one device acts like a master and the other as a slave. Using this communication protocol you can attach multiple slaves with a single master whereas you can also control single or multiple slave devices with multiple masters.
• INA219 can be easily incorporated with microcontrollers and Arduino boards and with devices that come with an I2C bus interface.
• It also contains a 2W 0.1 Ohms 1% rated shunt resistor mainly employed to fulfill the current measuring requirements.
• This sensor module is a key part of the power monitoring systems. The power input of this device ranges from 3V to 5.5V and the target voltage is up to +26V.

INA219 Datasheet

It is better to go through the datasheet of the device before you embed this device into your electrical project. The datasheet features the main characteristics of the module. Click the link below to download the datasheet of INA219.

INA219 Pinout

The following figure shows the pinout diagram of INA219. The following table represents the pin description of each pin incorporated into the module.

Pin Description of INA219
Pin No.	Pin Description	Pin Name
1	Sensed Input line -	VIN-
2	Sensed Input line +	VIN+
3	Input voltage	VCC
4	Connected to ground	GND
5	Serial clock line that carries the clock signal	SCL
6	Serial data line that contains the data	SDA

INA219 Features

• Contains 2C- or SMBus-compatible interface
• Comes with up to +26V target voltage
• Power Input Range = 3.0V-5.5V
• Can Sense Bus Voltages ranging from 0 to 26 V

• Up to 128 samples are averaged to get filtering in noisy environments.
• Capable of up to ±3.2A current measurement, with ±0.8mA resolution
• Contains ohm 1% 2W current sense resistor
• Board Dimension = 0.8 x 0.9 inch (l x w x h)

INA219 Applications

• Used in power monitoring systems
• Employed in power profiler
• Used in digital multimeter

That’s all for today. Hope you find this article helpful. If you’re unsure or have any questions, you can approach me in the section below. I’d love to help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share so we keep coming back with quality content customized to your exact needs and requirements. Thank you for reading the article.

FDV301N N-channel MOSFET Datasheet, Pinout, Features & Applications

Hello Everyone! I welcome you on board. Happy to see you around. In this post today, I’ll walk you through the Introduction to FDB301N.

The FDV301N is an N-channel MOSFET using Fairchild's proprietary and high cell density, DMOS technology. The cell’s high density helps to minimize the on-state resistance. This device is mainly developed for low-voltage applications. This N-channel MOSFET replaces different digital transistors and provides different bias resistor values.

I suggest you read this post all the way through as I’ll detail the complete Introduction to FDV301N covering datasheet, pinout, features and applications. Let’s jump right in.

Introduction to FDV301N

• The FDV301N is an N-channel MOSFET mainly used for switching and low-voltage applications.
• It carries low on-state resistance and can be used in place of different transistors for a range of applications.

• This device contains three terminals named gate, drain, and source. The source is the terminal from which electrons enter the channel and drain is the area where electrons leave the channel. While gate terminal is used for biasing the device.

• The MOSFETs are mainly divided into two main types i.e. N-channel MOSFET and P-channel MOSFET. The N-channel MOSFETs carry electrons as major charge carriers and P-channel MOSFETs contain holes as the major charge carriers.
• The movement of electrons is better than the movement of holes, making N-channel MOSFETs better than P-channel MOSFETs for a range of applications, especially for high-load applications.
• The drain-source voltage of this device is 25V and gate-source voltage is 8V and maximum power dissipation is 0.35W. This is the amount of power it dissipates during the working of this device.

FDV301N Datasheet

It’s wise to go through the datasheet before you apply this component to your electrical project as using this datasheet you can get a hold of the main characteristics of the device. Click the link below to download the datasheet of FDV301N.

FDV301N Pinout

The following figure shows the pinout diagram of FDV301N. This chip comes with three terminals called source, gate, and drain.

Pin Description of FDV301N
Pin No.	Pin Description	Pin Name
1	Electrons enter the channel through the source terminal	Source (S)
2	Used for biasing the device	Gate (G)
3	Electrons leave the channel through the source terminal	Drain (D)

FDV301N Features

The following are the main features of FDV301N.

• The RDS (on-state resistance) is a resistance between drain and source terminal that is 5? at gate-source voltage VGS of 2.7V and it’s 4? at VGS of 4.5V.
• The gate-source voltage (VGS-th) is 8V
• Drain Source Voltage (VDS) is 25V
• Continuous Drain Current (ID) is 220mA

• Level gate drive requirements are very low, helping direct operation in 3V circuits.
• The high-density cell process ensures low on-state resistance RDS (ON).
• This device is reliable and rugged.
• The operating and storage temperature range is -55C to 150C.
• Comes in a compact industry-standard SOT-23 surface-mount package.

FDV301N Applications

This N-channel MOSFET chip is used in the following applications.

• Incorporated in low voltage low current applications.
• Employed as switching devices in electronic control units.
• Used in automotive electronics.
• Used as power converters in modern electric vehicles.
• Used in servo motor control.

That’s all for today. Hope you’ve got a brief insight into the Introduction to FDV301N. If you have any query, you can share your comment in the section below, I’ll help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share so we keep producing quality content customized to your exact needs and requirements. Thank you for reading the article.

IRF520 MOSFET Datasheet, Pinout, Features & Applications

Hi Guys! Hope you’re well today. Happy to see you around. Today, I’ll walk you through the Introduction to IRF520.

The IRF520 is an N-channel power MOSFET mainly used for switching and amplification purposes. It comes with a breakdown voltage of around 100V and a low gate threshold voltage is 4V, making it an ideal pick for microcontroller applications.

I suggest you read this post all the way through as I’ll detail the complete Introduction to IRF520 covering datasheet, pinout, features, and applications. Let’s get started.

Introduction to IRF520 MOSFET

• The IRF520 is an N-channel power MOSFET mainly used for switching and amplification purposes.
• It comes with three terminals named: gate, source, and drain and is available in the TO-220 package.
• It is important to note that the gate terminal is electrically insulated and contains no current and is normally called an Insulated Gate FET (IG-FET).

• As it’s an N-channel MOSFET so here major charge carriers are electrons as opposed to P-channel MOSFET where major carriers are holes.
• The movement of electrons is better than the movement of holes, making N-channel MOSFET better than P-channel MOSFET.
• Due to better movement of electrons, N-channel MOSFETs with high loads remain cool while P-channel MOSFETs turn hot in the presence of high loads.

• The major charge carriers i.e. electrons enter the channel through the source terminal while they exit the channel through the drain terminal. And the gate terminal controls the biasing of this MOSFET.
• This N-channel MOSFET comes with low on-state resistance of around 0.27 ohm, allowing it to dissipate less energy as heat and consequently increasing the efficiency of the device.
• IRF520 contains a low threshold voltage of around 4V which projects it can be turned on with 5V on the GPIO pins on the microcontroller.
• This chip comes with a decent switching speed, making it an ideal pick for DC-DC converter circuits.
• The continuous drain current (ID) of this device is 9.2A while the drain-to-source breakdown voltage is 100V. The Rise time is 30ns and the fall time is 20nS.

IRF520 Datasheet

Before you apply this component to your electrical project, it’s wise to scan through the datasheet of the component that features the main characteristics of the device. Click the link below to download the datasheet of IRF520.

IRF520 Pinout

The following figure shows the pinout diagram of IRF520 Mosfet. The IRF520 comes in three terminals named Gate, Drain, and Source.

Pin Description of IRF520
Pin No.	Pin Description	Pin Name
1	Used for biasing the device	Gate
2	Electrons leave the channel through a drain terminal	Drain
3	Electrons enter the channel through the source terminal	Source

IRF520 Features

The following are the main features of IRF520 mosfet.

• N-Channel Power MOSFET
• Continuous Drain Current (ID) = 9.2A
• Drain to Source Breakdown Voltage = 100V
• Rise time is 30ns and the fall time is 20nS.

• Drain Source Resistance (RDS) = 0.27 Ohms (also known as on-state resistance)
• Since it contains low threshold voltage, it is commonly employed with Arduino applications.
• Gate threshold voltage (VGS-th) = 4V (max)
• Available Package = TO-220 package

IRF520 Applications

The following are the main applications of this device.

• Employed to control the speed of motors
• Used in converters or Inverter circuits
• Used in high power devices
• Incorporated in high-speed switching applications
• Used in LED dimmers or flashers

That’s all for today. Hope you’ve got a brief insight into Introduction to IRF520 mosfet. If you’re unsure or have any questions, you can approach me in the section below. I’d love to help you the best way I can. Feel free to share your valuable feedback and suggestions around the content we share so we keep coming back with quality content customized to your exact needs and requirements. Thank you for reading the article.

BSS138 MOSFET Datasheet, Pinout, Features & Applications

Hi Everyone! Hope you’re well today. I welcome you on board. In this post today, I’ll detail the Introduction to BSS138.

The BSS138 is an N-Channel Logic Level Enhancement Mode Field Effect Transistor that is available in surface mount package SOT-23. It features a low input capacitance of around 40pF and a low on-state resistance of around 3.5. High switching speed and low threshold voltage make this device an ideal pick for level shifter circuit applications.

I suggest you read this post all the way through as I’ll walk you through the complete Introduction to BSS138 covering datasheet, pinout, features, and applications. Let’s jump right in.

Introduction to BSS138

• The BSS138 is an N-Channel MOSFET mainly used in low current and low voltage switching applications.
• It contains three terminals called, drain, source, and gate. At times the body is also included in the terminals, making it a four-terminal device.

• It is important to note that the gate terminal is electrically insulated and contains no current and is normally called an Insulated Gate FET (IG-FET).
• MOSFETs are categorized into two main types i.e. N-channel MOSFET and P-channel MOSFET. This chip BS138 falls under the category of N-channel MOSFET where electrons are major carriers. While holes are major carriers in P-channel MOSFETs.
• The electron movement is better than the hole movement. The reason, N-channel MOSFETs are preferred over P-channel MOSFETs for a range of applications.

• During working with high loads the P-channel MOSFETs turn hot while the N-channel MOSFETs remain cool.
• BSS138 comes in a continuous drain current of around 200mA and drain-source VDS voltage is 50V.
• The on-state resistance of this chip is 3.5, while the turn-off and turn-ON time is 20ns each.
• The compact and robust nature of this device makes it an ideal choice for portable applications including power management circuits and cell phones.
• The BSS138 is costly compared to its alternative 2n7002. Picking the alternative, you have to compromise with the threshold voltage and on-state resistance.

BSS138 Datasheet

Before you incorporate this component into your electrical project, it’s better to scan through the datasheet of the component that highlights the main characteristics of the device. You can download the datasheet of BS138 by clicking the link below.

BSS138 Pinout

The following figure shows the pinout diagram of BSS138. This device contains three terminals called source, drain, and gate.

Pin Description of BSS138
Pin No.	Pin Description	Pin Name
1	Electrons enter the channel through the source terminal	Source (S)
2	Controls the biasing of the component	Gate (G)
3	Electrons leave the channel through the drain terminal	Drain (D)

BSS138 Features

The following are the main features of BSS138.

• Logic Level N-Channel MOSFET
• Turn ON and Turn OFF time = 20ns each
• Continuous Drain Current (ID) = 200mA
• Comes in low on-state resistance

• Gate threshold voltage (VGS-th) = 0.5V
• On-state Resistance = 3.5?
• Drain Source Voltage (VDS) = 50V
• Gate threshold voltage (VGS-th) = 1.5V
• Available Package = SOT23 SMD

BSS138 Alternatives

The following are the alternatives to BSS138.

• IRF540N
• IRF3205
• IRF1010E
• 2N7000
• BS170N

Before you incorporate these alternatives, double-check the pinout of these equivalents as the pinout of the alternatives might differ from the pinout of BSS138.

BSS138 Applications

This chip is used in the following applications. Used in automotive electronics.

• Employed as switching devices in electronic control units.
• Incorporated in low voltage low current applications.
• Used in automotive electronics.
• Used as power converters in modern electric vehicles.
• Used in servo motor control.

That’s all for today. Hope you’ve got a brief insight into the Introduction to BSS138. If you have any questions, you can approach me in the section below, I’d love to help you the best way I can. You’re most welcome to share your valuable feedback and suggestions around the content we share so we keep sharing quality content customized to your exact needs and requirements. Thank you for reading the post.