The Engineering Projects

Introduction to 2sa1215

Hey Everyone! I hope you all are having fun and looking forward for happy weekend. I am here to give you a daily dose of sound knowledge so you can develop some skills in engineering field. Today, I am going to uncover the details on the Introduction to 2sa1215. It is bipolar silicon PNP (positive-negative-positive) transistor. It is made up of two layers of P doped material and one layer of N doped material. I'll give you the brief overview of this device, what it does and what are its major applications? Let's hop on the board and dive into the details of this PNP transistor.

Introduction to 2sa1215

• 2sa1215 is a bipolar PNP silicon transistor where one layer of N doped material lies between the two layers of P doped material.
• The small current at the base side is used to handle the large current at the emitter and collector side.
• In PNP transistor, P side represents the polarity of voltage at the emitter side which is positive and N represents the polarity of base side which is negative. In PNP transistor, Emitter is always positive with respect to base.

• 2sa1215 has a current gain that ranges between 50 to 180.
• Some people get deceived by the dust like surface on this transistor, which actually is not a dust, but an anti-static powder.
• It is also called high frequency multi emitter transistor.

2sa1215 Pinout

Pinout of 2sa1215 is shown in the figure below. 2sa1215 consists of three terminals 1: Base 2: Collector 3: Emitter

• Current will flow from collector to emitter and current carries are holes.
• Sometimes 2s prefix is not written on the component. 2sa1215 can be written as A1215.
• 2sc2921 is the complementary NPN transistor of 2sa1215.
• 2sa1215 can be replaced by 2sa1493, or 2sa1216

Circuit Symbol 2s1215

Circuit symbol of 2s1215 is shown in the figure below. It is made up of two P layers and one N layer.

• Polarity at the emitter side is positive as compared to base and collector.
• Base comes with negative polarity with respect to emitter.
• Small current at the base side is used to handle the large current at the collector and emitter.
• PNP also works similar to NPN, but in case of PNP current direction will be reversed and current carriers used in case of PNP will be holes rather than electrons that are current carriers in NPN transistors.
• Current at the emitter side is equal to the sum of current at base and collector side.

Maximum Rating of 2sa1215

Maximum rating of 2sa1215 is shown in the figure below.  

• Collector base voltage is 160 V and is denoted by Vcb.
• Collector emitter voltage is also 160 and is denoted by Vce.
• Power dissipation of this transistor is 150W.
• Collector current and base current are 15 A and 4 A repectively.
• Transition frequency is 50MHZ.

 

How to Identify Genuine 2s1215

There are genuine and fake (Chinese) transistors out there. However, you don't need to worry about that, I am going to give you three ways by which you can check if transistor is genuine of fake.

• 1: Genuine copy of transistor 2s1215 comes with a weight of 18.4g, which its Chinese copy only weighs 15.7g.
• 2: Genuine copy consists of two layer metal heat sink, while Chinese copy only consists of one layer metal heat sink.
• 3: Transistors can also be classified on the basis of their output. Genuine copy gives good output, while in case of Chinese copy, output is broken.

Difference between NPN and PNP transistors

• Both NPN and PNP transistors works in a similar way with the exception that Base is positive in case of NPN transistor and is negative in case of PNP transistor. NPN transistor sources the current from its base to the transistor while in case of PNP it sinks the current into its base side.
• NPN and PNP are also different with respect to medium used to carry current. Current carriers in NPN transistors are electrons while current carries are holes in case of PNP transistors. Holes are collected by the collector.

Applications

• It can be used for high audio output stage.
• It is also used as general purpose amplifier and for switching applications.

That's all for today. I hope you have got an idea of this PNP transistor. If you have any question you can ask me in the comment section below. I'll try my best to resolve your query as soon as possible. Thanks for reading the article. Get ready for next article. Till then, stay happy and blessed. Good Bye!

Introduction to 5n50

Hey Everyone! I hope you are doing great. I am back to give you daily dose of information so you can excel in your life. Today, I am going to uncover the details on the Introduction to 5n50. It is an N-Channel MOSFET which is designed to obtain high switching performance and minimum on state resistance in an effective way. It is a unipolar device which comes with three terminals called drain gate and source. I'll try to cover everything in detail related to this N-Channel MOSFET. Let's hop on the board and dive in the details to unlock the features of this transistor.

Introduction to 5n50

• 5n50 is an N-Channel MOSFET that comes in advanced DMOS, planer stripe technology.
• It is designed to achieve high switching performance. As it is an N-Channel MOSFET, so here conduction will be carried out by the movement of electrons.
• 5n50 usually consists of three terminals called source gate and drain. Conduction is achieved when electron emit from the source terminal and collected by the drain terminal.
• Conducting path between drain and source is called channel. Small positive voltage at the gate terminal is used to control the conduction between drain and source terminal.

• As we increase the initial input voltage at the gate terminal it will allow the conduction path between source and drain to increase, hence helps in increasing the overall conductivity of the channel.
• In this MOSFET, gate is practically isolated from drain and source and there lies an insulating layer between the gate and the body of the transistor. Sometimes it is referred as IGFET( Insulated Gate Field Effect Transistor), as gate is insulated and draws no current.

5n50 Pinout

This N-Channel MOSFET consists of three terminals which are given below. 1: Source 2: Gate 3: Drain  

• Voltage at the gate terminal is used to control the conduction between source and drain. And conduction is carried out by the movement of electrons.
• It comes in three different package named as TO-220, TO-252 and TO-262 receptively.
• All three types come with same characteristics but with different power dissipation values.

Working of 5n50

• As it is N-Channel MOSFET, so conduction will be done by the movement of electrons.
• In 5n50, the drain and source are composed of N type material while body and substrate is composed of P type material.
• The gate of this transistor is used composed of layer of poly-silicon.
• The addition of silicon dioxide on the layer of substrate gives the typical metal oxide semiconductor construction. MOS.
• The layer of silicon dioxide is a dielectric material so it will act as a capacitor where one of its electrodes will be replaced by the semiconductor.

• As we apply positive voltage at the MOS composition, it will alter the charge distribution in the semiconductor. With the addition of positive voltage, the holes present under the oxide layer will encounter a force and allow the holes to move downward. The depletion region will be accumulated by the bound negative charges which are connected with acceptors atoms.
• The accumulation of electrons at the p-type substrate increases the conductivity between the source and drain. At this point the electrical properties of p-type substrate will consistently inverts, allowing the substrate to change into n-type material.
• The addition of positive voltage at the gate terminal will control the movement of electron in the conducting channel between source and drain. The more we increase the voltage the more it will increase the overall width of conducting channel, hence ultimately increases the conductivity of transistor.
• Main advantage of this transistor over other bipolar junction transistor is that it needs no input current to handle the load current.

Maximum Ratings 5n50

Following figures shows the absolute maximum rating of 5n50.

• Drain-Source voltage is 500 V.
• Drain current is 5 A.
• Power dissipation is 38, 54, 125 W for different composition of MOSFET that comes  in three forms TO-220, TO-252, TO-262 repectively.

Applications

• 5n50 is an N-Channel MOSFET which is widely used in many electronic applications.
• It is used in active power factor correction.
• The ability of transistor to change its conductivity by the addition of positive voltage at the gate terminal is used for efficient amplification purpose.
• It is useful in many efficient power supplies where high switching is required.
• Some electronic lamps use this MOSFET for driving purpose.

That's all for today. If you have any query or question you can ask me in the comment section below. I'll try my best to help you in this regard. Thanks for reading the article. Stay Tuned for next article!

Importance of a good content for small business

A lot of small business owners face the problem of promotion of their goods. Compared to other business, the small one is working in the more harsh environment due to limited resources. Teams of small business usually are not very large as well as they are not very experienced. In the XXI century, most of advertisements and promotions are done via the Internet, which means that you should try your luck in this field too. It is an approachable and affordable way of advertisement for small business companies. Content marketing is a promotion of your business that is done usually on the internet. To overcome your competitors you need to provide better marketing that they do. How can you achieve that? In general, content marking can be divided into three steps.

Step 1. Making a research

This step is the most important. What does it mean? In this context, research means gathering of information about the overall market as well as about your customers. Why is it necessary? It helps you not only to improve your service but to attract new buyers too. As a consequence, you will have an increased profit from your business. To do that you need to consider people you are dealing with. Understanding your customers' behavior will bring a lot of benefits. Where do they get an information? What do they need? What are they looking for? Who are they? and so on. Another important thing here is to pay attention to your competitors. Watch after their successful and unsuccessful strategies in order to improve your own. As it was said above you need to gather information about the market itself. Understand the trends will help you to promote the right products or services.

Step 2. Creating a plan

After you have gathered as much information as you could, you can start planning. Setting real objectives are very important as well as looking for the ways to achieve them. The first mistake here that people usually do is setting too many goals. The fewer goals you have the more resources you can spend on each of them, which makes your aims are more achievable. Notice, that content marketing can be used for near every purpose from promoting SEO up to customer's retention. Understanding of the amount of time that is needed is very useful, setting time frames is very important. Time frames are closely connected with the number of your available investments. Take it into account.

Step 3. Drafting

It is about the realization of your plan. How are you going to reach your goals? Do you want to see a lot of texts, videos, some interactive content? It includes also the topics you are going to come with, it's promotion and publishing etc. This is all about making your plans real. In most cases, it is better to think about taking some additional temporary help from professionals. Ffor example, if you need a lot of texts it is better to hire content writers than do it by yourself. They can give you some pieces of advice as well as their work will have much higher quality.

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What is MOSFET? Definition, Full Form, Symbol & Working

Hey Guys! I hope everyone's fine. Today, we are going to have a look at What is MOSFET? We will cover MOSFET Definition, Full Form, Symbol, Working & Applications in detail.

MOSFETs are commonly used in many electronic applications. A number of MOSFETs are added in tiny memory chips or microprocessors that are widely used in cell phones and laptops. It is a voltage-controlled device that is used for amplification and switching purposes. I'll try to touch every area related to MOSFET. Let's get started.

What is MOSFET?

• MOSFET is an advanced type of FET, manufactured with controlled oxidation of semiconductor, having 4 Terminals, named:
  • Drain(D)
  • Gate(G)
  • Source(S)
  • Body(B)

where,

• Gate(G) Terminal is practically insulated from the entire assembly by a thin layer of Silicon-oxide(SiO2).
• Body(B) Terminal is connected internally with Source(S) Terminal & thus the MOSFET package consists of 3 pins.

• The below figure shows the MOSFET package, construction & symbol: (we will discuss them in detail below)

MOSFET Full Form

• MOSFET stands for "Metal-oxide Semiconductor Field Effect Transistor".

MOSFET Symbol

• Although MOSFET has 4 terminals, but as I have mentioned before, the 4th terminal is internally connected with the Source terminal & thus the package consists of 3 Pins, so as the MOSFET Symbol.
• MOSFET symbols are shown in the below figure:

Why MOSFET?

• Unlike BJT, MOSFET requires almost no input current & controls heavy current at the output.
• MOSFETs are quicker in operation than FETs, thus used in fast switching applications.
• FET has high drain resistance, while it's too low in MOSFET.

History of MOSFET

• MOSFET laid the foundation of modern electronics back in 1959 when it was invented at Bell lab by Mohammad Attala and Dawon kahng.
• MOSFET was presented to the world in the 1960s with a few tweaks in the original version of the device.
• In the 1960s the invention of MOSFETs led to rapid exponential growth of the semiconductor world, it enabled the use of semiconductors in integrated circuits and microcontroller units.
• MOSFET is compact and easy to use, which is why it is always in demand for mass production.

MOS Revolution

• The evolution and development of MOSFET led to a revolution in electronics which is labeled as the MOS revolution or MOSFET revolution.
• The birth of the Metal Oxide Semiconductor Field-effect transistor was regarded and cherished as the birth of modern electronics.
• MOSFET is one of the most widely mass-produced technologies of this era. Can you imagine the count of MOSFETs manufactured to date? By 2018 it was 13 Sextillion, unbelievable! Isn’t it?

MOSFET Construction

• Let's understand the construction of N-type MOSFET: In N-type MOSFET, two highly doped N regions are diffused into a single lightly-doped P substrate.
• Silicon Oxide(SiO2) layer is placed over Gate Terminal to create the insulation.
• Aluminum Probes are used for connecting terminals i.e. Gate, Drain & Source to respective regions.
• Silicon oxide(SiO2) layer is the main difference between FET & MOSFET and thus MOSFET is sometimes referred to as "FET with Insulated Gate" or "IGFET(Insulated Gate Field Effect Transistor)".
• Because of this oxide layer, MOSFET acts as a voltage controlled IC i.e. voltage at Gate Terminal decides the conductivity between drain and source.
• The conduction path between Source(S) and Drain(D) is called channel & its width is controlled by the Gate(G) voltage in MOSFET.
• MOSFET is a unipolar device i.e. conduction of current is carried out by the movement of either electrons or holes(majority charge carriers).
• N-Channel MOSFET internal Construction is shown in the below figure:

 

Types of MOSFET

MOSFETs are further divided into two types. MOSFET types are as follows:

1. N-Channel MOSFET.
2. P-Channel MOSFET.

Let's understand these MOSFET types, one by one:

N-Channel MOSFET

• In N-Channel MOSFET, a single P-layer is present between two N-layers & current flows because of negatively charged electrons(termed as majority charge carriers).
• Below figure shows the symbol, construction & block diagram of N-channel MOSFET:

P-Channel MOSFET

• In P-Channel MOSFET, single N-layer is present between two P-layers & current flows because of positively charged holes(termed as majority charge carriers).
• Below figure shows the symbol, construction & block diagram of P-channel MOSFET:

MOSFET Working Principle

In order to understand the working principle of MOSFET, we have to first understand its operational modes. Depending on the polarity of Gate Voltage, MOSFET operates in two modes, named:

1. Enhancement Mode.
2. Depletion Mode.

MOSFET Enhancement Mode & Depletion Mode

Let's take the example of an N-type MOSFET:

• If a positive voltage is applied at the Gate Terminal of N-type MOSFET, it starts conducting by creating a bridge between Drain & Source and termed as acting in Enhancement Mode.
• When a positive voltage is applied at the Gate terminal, the surface below the oxide layer starts attracting electronics while repelling holes.
• Hence, electrons get accumulated below the silicon oxide layer.
• As we increase the voltage at Gate Terminal, more electrons get attracted & thus conduction increases in N-Type MOSFET.
• If we reverse the voltage at Gate Terminal, N-type MOSFET will repel electrons and attract holes, thus the connection between Drain & Source will break & MOSFET is said to be in Depletion Mode.
• Both Operating Modes of N-Type MOSFET is shown in below figure:

MOSFET Characteristics

• In the composition of enhancement MOSFET, there must be minimum input gate-source voltage is applied to the gate before it starts conducting, this minimum voltage is called threshold voltage.
• In order to conduct these enhancement amplifiers, the gate-source voltage Vgs must be greater than the threshold voltage.
• Drain current Id will increase by increasing the forward biasing of MOSFET, making them suitable for efficient amplifier circuits.
• When we apply a fixed voltage between the drain and source Vds, we can plot the values of drain current Id for different values of the voltage across gate and source Vgs.

• These VI characteristics show the transconductance of the MOSFET. This transconductance is the ratio between the output drain current to the input gate-source voltage.
• For a fixed value of Vds, the slope of transconductance can be found as

gm= ?Id/?Vds

• This ratio is termed as transconductance which is a short form of "transfer conductance". The SI unit of transconductance is Siemens which is ampere per volt.
• The voltage gain of this MOSFET increases with the increase in transconductance and value of the drain resistor.
• At Vgs=0, N-Type enhancement MOSFET acts like an open switch or normally off, because field-effect won't be able to open the N-Type channel around the gate.
• Thus transistor will fall under the "cut-off" region at this point. The OFF condition of the MOSFET is represented by the dotted line, unlike the depletion region which shows a continuous line, showing the conduction region of the transistor.

• As we apply gate-source voltage Vgs at the gate terminal, it will start to conduct in the region between source and drain.
• The voltage at which transistors start conducting is known as threshold voltage and is represented by Vth.
• As we increase the gate-source voltage it will allow the conducting channel to go wider and ultimately increases drain current Id.
• It is important to note that the gate never conducts as it is practically isolated from the conducting channel between source and drain. MOSFET encompasses high impedance which is useful in many electrical amplifying circuits.
• If the threshold voltage is greater than gate-source voltage, then the channel will not conduct, it will only conduct when threshold voltage will be less than gate-source voltage Vgs.
• In the conduction or saturation region drain current can be calculated as
• Id= K(Vgs-Vth²)
• It is important to note that values of the threshold voltage Vth and K(conduction parameter) are different for different eMOSFET, these values don't vary physically as they come by default during the composition of the material from which transistors are made.
• It is clear from the figure above that graph on the right side starts as a parabola and then it becomes linear, and it gives the slope of the characteristic curve that increases with the increase in drain current for a fixed value of drain-source voltage Vds.
• In order to put the MOSFET in ON state, the gate of the transistor must be biased from its given threshold level.
• Biasing of gate terminal can be achieved using two different methods i.e. Zener diode biasing, and drain feedback biasing. Before biasing you must take one point into consideration that gate voltage must be greater than source by a value greater than the threshold voltage.

MOSFET as a switch

• It is the most basic and widely known application of the MOSFET.
• Consider the following circuit diagram, an N channel MOSFET is used in the enhanced mode to operate the lamp.
• When the positive voltage VGS is applied to the gate of the MOSFET, a channel is established and the lamp is turned ON.

• Similarly, when the gate voltage is zero the lamp turns off.
• MOSFET can only work as an analog switching circuit if it operates between the cut off region when the gate-source voltage is zero up to the saturated region where the VGS becomes saturated, you can go through the complete process by studying the characteristics curve of the MOSFET we have discussed in the earlier section.
• The circuit which we are discussing has a very small amount of resistive load, if you want to protect your MOSFET from overloading you need to connect it to a relay or a diode. If you are not providing enough protection to your MOSFET, you would eventually damage it.

Comparison of MOSFET with Other Transistors

MOSFET was practically designed to make amends in the performance of Junction Field-effect Transistors because they had very high drain resistance, a very slow processing speed, and they were a bit noisy as well. We have been discussing transistors lately and we are done with the detailed outlook of other transistors such as bipolar junction transistor and field-effect transistor as well, so let us compare all the three main types to summarize the concepts. It would help you revise the previously learned concepts as well.

MOSFET vs BJT

• The major difference between BJT and MOSFET is that BJT is a bipolar device in which conductivity is carried out by the movement of both electrons and holes while MOSFET is a uni-polar device in which conduction is carried out by the movement of electrons or holes.
• The three terminals in BJT called emitter base collector are analogous to MOSFET three terminals called source gate and drain respectively.
• Another area where MOSFET differs from BJT is that there is no direct connection between the gate and conducting channel of source and drain, unlike BJT where a small current at the base side is used to control the large current at the emitter and collector side. That's the reason MOSFET is also named IGFET (Insulated Gate Field Effect Transistor).
• BJT is a current-controlled device meanwhile MOSFET is a voltage-controlled device, for a better understanding you can read the article to know how a MOSFET is a voltage controlled device.
• MOSFET is preferably used in analog circuits and BLDC motors but bipolar junction transistors are not the first choice in this regard.
• We mainly use BJT for performing low current functions on the parallel lines MOSFET are implied in high power applications, don't worry we will discuss the appliances of MOSFET in later sections.

MOSFET vs JFET

Both MOSFET and JFET belong to the same family of field-effect transistors.

• MOSFET has four components meanwhile the JFET has three components, three components namely the base source and drain are the same meanwhile the only different component is the Body of the MOSFET.
• MOSFET has a higher input impedance than the JFET.
• MOSFET has higher drain resistance than JFET because of the already established conduction channel of MOSFET.
• MOSFET make less noise than the JFET
• JFET is less costly and easy to manufacture because of the absence of a metal oxide layer that is present in MOSFET.
• MOSFET can easily be damaged due to low input capacitance meanwhile a higher input capacitance saves the JFET from immediate damage.
• JFET has a higher gate current than the MOSFET.
• MOSFET can work in two modes, depletion-mode as well as enhancement mode, on the other hand, JFET only works in depletion mode.

MOSFET vs IGBT

• IGBT is the insulated Gate Bipolar Transistor meanwhile MOSFET is the metal oxide semiconductor field-effect transistor
• IGBT is the combination of the bipolar junction transistor with the MOSFET, meanwhile, the MOSFET is the true transistor.
• MOSFET are not tolerant to electrostatic discharges meanwhile an IGBT is highly stable in this regard.
• The IGBT is tolerant of overloading meanwhile a MOSFET is susceptible to damage because of overloading.
• IGBT is used in high power applications, on the parallel lines, the MOSFET has a relatively lower capacity to deal with such high power applications like IGBT.

MOSFET Review

• MOSFET is a type of FET that is a unipolar device i.e. single charge carriers are responsible for the conduction between source and drain.
• The voltage applied at the gate side is used to control the current flowing through conducting channel between source and drain.
• MOSFET is a voltage-controlled device, unlike BJT which is a current-controlled device.
• Practically, the gate of the MOSFET draws no current. However, a small amount of initial current is needed to charge the capacitance of the gate terminal.

MOSFET Applications

• MOSFET is mostly used as an electronic automatic switch in both analog & digital circuits.
• It is widely used in applications where high amplification is required.

That's all for today. Hope you have got a clear idea about MOSFET. If you have any questions you can ask me in the comment section below. I'll try my best to resolve your query as soon as possible. Your feedback and suggestion will be highly appreciated. It will allow us to give you quality work based on your needs and expectations. Stay tuned!  

Introduction to 1n4733a

Hey Fellas! I hope you are enjoying your life with love, care and passion. Today I'm going to give you the details on the Introduction to 1n4733a. It is a Zener Diode which works similar to normal diode with only exception, it can also conduct in reverse biased condition. Zener diodes are considered as a basic building components for many electronic circuits. I will try my best to give you the details on almost every feature of this zener diode so you don't need to go anywhere for finding the information regarding this zener diode. Let's get started.

Introduction to 1n4733a

• 1n4733a is a normal p-n junction diode which allows the current to flow in both directions i.e. forward direction and reverse direction.
• In other words, it conducts in both ways i.e. when it is forward biased, also when it is reverse biased.
• In order to conduct in reverse biased condition, reverse breakdown voltage must be achieved.
• Over a wide range of voltages, voltage drop across the zener diode doesn't change which makes it ideal for using for voltage regulation purpose.
• Unlike normal diodes, zener diodes work in breakdown region and are best for generating reference voltage.

• This zener diode comes with a highly doped p-n junction and sealed glass package that gives solid protection in all common atmospheric conditions.
• It is widely used to prevent the electronic circuits from over voltage.
• 1n4733a comes with different voltage rating ranging from 3.3 V to 91 V.
• It offers double slug construction which is corrosion resistant. And the leads that come with this zener diode are easily solderable and can withstand the maximum temperature up to 230 C.
• It encompasses excellent working characteristics and have power of 1 W.  The voltage tolerance appears to be 5%.

Working of 1n4733a

• Working principle of this zener diode is similar to common diode with slight difference.
• Zener diode In4733a acts like a normal diode in forward biased condition.
• It exhibits a turn on voltage that ranges between 0.3 to 0.7 V.
• It only conducts in the reverse direction when reverse voltage reaches to the breakdown voltage, allowing the current to flow from cathode to anode.
• Current reaches to maximum and stabilizes itself after a certain amount of time over a wide range of applied voltage which makes it suitable for using as a voltage stabilizer.
• Voltage breakdown occurs due to the Zener breakdown effect. It may also occur due to impact ionization. Both mechanism occur at 5.5 V., encompass same feature and don't need different circuitry in order to work perfectly. However, temperature coefficient of both mechanisms is different. Zener effect shows negative temperature coefficient and impact ionization shows postitive temperature coefficient. Both effects cancel each other at 5.5 V, making the zener diode achieve the most stable state over a wide range of temperatures.

Zener 1n4733a used for different Purposes

Zener diodes have a wide range of application specially when it comes to voltage regulation. This zener diode comes with many specifications and applied to electrical circuits in different forms as follow.

As a Voltage Regulator

• Zener diodes are useful to regulate the voltage in many small circuits. When zener diode is connected in parallel with the voltage in reverse biased mode, it will start conduction when voltage equals to a breakdown voltage.

• In the above figure, source voltage is applied in parallel with the diode. It will perfectly decrease the output voltage from its input, while keeping the breakdown voltage constant over a wide range of source voltage. Output voltage will remain stable, even the fluctuation in source input voltage won't effect the output voltage due to constant breakdown voltage.

Waveform Clipper

• Zener diodes are also used as a wavefrom clipper when they are connected in series. Following is the figure of two zener diodes connected in series.

• When zener are connected in series, it allows the waveform to clip from both ends of the cycle i.e. positive end of the cycle and also negative end of the cycle.
• Zener diodes connected in series also prevent the high voltage spikes at the end of the output signal, allowing the reshaping of output voltage.

Voltage Shifter

• Zener diode can also use for shifting the output voltage.
• When it applies as a voltage shifter, it drops down the output voltage by the quantity equal to breakdown voltage.

That's all for today. I hope you have now got a clear idea about working principle of 1n4733a and how it is used for different purposes. However, if you have any confusion, you can ping me a message in the comment section below, I'll be glad to help you in this regard. Your feedback and suggestions will be highly appreciated. Brace yourself for next article. Stay Blessed!