The Engineering Projects

2SB772 Transistor Pinout, Features, Datasheet & Applications

Hello everyone! I welcome you on board. Hope you’re well. In this post today, I’ll detail the Introduction to 2sb772. 2sb772 is a PNP transistor that comes in the TO-126 package. It is mainly used for amplification and switching purposes. This is a bipolar junction transistor which means the conductivity is carried out by two charge carriers i.e. holes and electrons. And it comprises of two junctions where the base-emitter junction is forward biased and the base-collector junction is reverse biased in forward active mode. In this post, I’ll be discussing the working principle, pinout, datasheet, physical dimensions, power ratings, and applications of the device 2sb772. Let’s get started.

Introduction to 2SB772

• The 2sb772 is a medium power PNP bipolar junction transistor mainly employed for switching and amplification purpose.
• It comes with three main terminals called the emitter, collector, and base. All these terminals come with different functionality and different doping concentrations.
• The emitter side is highly doped in contrast to the other two terminals and the collector is lightly doped. The base terminal is 10-times highly doped compared to the collector terminal.
• 2sb772 is a semiconductor device made up of silicon material and it consists of three layers. Where one is an n-doped layer that stands between two p-doped layers.

• The n-layer signals the base terminal and indicates that negative voltage supply is required to bias the base terminal and start the overall transistor action.
• As this is a bipolar transistor, both electrons and holes play a vital role in the conductivity process.

• And holes are majority carriers while electrons are minority carriers in this case in contrast to NPN transistors where electrons are major carriers and holes are minority carriers.
• The bipolar transistors like this 2sb772 are the building blocks of modern electronics.
• In some cases, however, the vacuum tubes are preferred over bipolar transistors since the mobility of charge carriers is far better in vacuum tubes which is suitable for high-power high-frequency applications like on-air television broadcasting.

2SB772 Datasheet

Before installing this component into your project, have a quick look at the datasheet that helps you get a hold of the main characteristics of the device. Click the link below and download the datasheet of 2sb772.

2SB772 Pinout

The 2sb772 carries three main terminals known as 1: Emitter 2: Collector 3: Base The following figure shows the pinout diagram of the 2sb772 transistor.

• All these terminals are used for the external connection with the circuit. The emitter side carries the overall transistor current.
• And in this PNP transistor current flows from the emitter to the collector terminal due to the movement of major charge carriers i.e. holes.
• While the current flows from the collector to the emitter terminal in the case of NPN transistors due to the mobility of electrons.

2SB772 Working Principle

• The working principle of this transistor is simple and quite similar to NPN transistors. In both NPN and PNP transistors, the base pin is mainly responsible for the overall transistor action.
• And when a positive voltage is applied at the base terminal it gets biased and current flows due to the movement of holes.

• When there is no current available at the base terminal, the transistor is turned ON and in that case, both collector and emitter pins are forward biased.

• And when there’s current present at the base terminal, the device is turned OFF and both emitter and collector terminals are reverse biased.
• Unlike other transistors, bipolar transistors are not symmetrical. Different doping concentrations of both emitter and collector sides are responsible for the lack of symmetry inside bipolar junction transistors.
• Moreover, if we exchange the collector and emitter terminals, the common-emitter gain and common-current values will be less than they are normally observed.
• The common-emitter current gain is called beta and is also known as the amplification factor. In this case, the amplification factor stretches from 30 to 300. This factor determines the amount of input current this transistor can amplify.

2SB772 Power Ratings

The following table shows the absolute maximum ratings of 2sb772.

Absolute Maximum Ratings BC639
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	30	V
2	Collector-Base Voltage	Vcb	60	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	3	A
5	Current Gain	hfe	30 to 300
6	Power Dissipation	Ptot	12.5	W
7	Storage Temperature	Tstg	-65 to 150	C

• The collector-base voltage is 60V while the collector-emitter voltage is 30V. And the emitter-base voltage is 5V which means it requires a total 5V to start the transistor action and bias this device.
• The power dissipation is 12.5W which determines the amount of energy this device releases during the working of this component. Storage temperature lies from -65 to 150 C and the junction temperature is 150C.
• While working with this device make sure your ratings don’t exceed these absolute maximum ratings, else you’ll risk the component and thus the entire circuit.

• Also, if you apply these ratings for more than the required time, they will affect device reliability.

2SB772 Alternatives

The following are the alternative to 2sb772.

• BD186
• KSB772
• BD132
• BD188
• MJE232
• BD190
• MJE235
• KSH772

Before you incorporate these alternatives into your circuit, double-check the pinout of the alternatives, as it's quite likely the pinout of the alternatives doesn't exactly match with the pinout of the 2sb772. The complementary NPN transistor to 2sb772 is 2sd882.

2SB772 Applications

This device is used in the following applications.

• Used for amplification and switching purposes.
• Incorporated in H-bridge circuits.
• Employed in relay drivers.
• Incorporated in the motor control circuit.
• Used in voltage regulator circuits.
• Used in Astable and Bistable multivibrators.
• Used to support loads under 3A.

2SB772 Physical dimensions

The following diagram shows the physical dimensions of transistor 2sb772. These dimensions will help you identify the total space required for the entire project. That’s all for today. Hope you find this article helpful. If you are unsure or have any query you can pop your comment in the section below, I’d love to help you the best way I can. You’re most welcome to share your feedback and suggestions, they help us produce quality content customized to your exact requirements. Thanks for reading this post.

TIP41C Transistor Pinout, Features, Datasheet & Applications

Hi Friends! Welcome you on board. Happy to see you around. In this post today, I’ll walk you through the Introduction to Tip41c. Tip41c is an NPN transistor that comes in the TO-220 package and is mainly used for amplification and switching purposes. It’s a high switching speed device with improved current gain and a high collector current around 6A that indicates the value of load this device can support. Both collector-base and collector-emitter voltages are 100V (higher than other bipolar transistors) and the emitter-base voltage is 5V which shows the only 5V is required to bias this component. Just stay with me for a little while as I’m going to detail the pinout, datasheet, applications, power ratings, working principle, and physical dimensions of this tiny device. Let’s jump right in.

Introduction to TIP41C

• Tip41C is an electronic tiny device mainly used for switching and amplification purpose. It belongs to the category of NPN transistor and comes with high power around 65W, which is the amount of energy released during the working of this transistor.
• This NPN transistor comes with three pins, also known as terminals, called the emitter, collector, and base.
• The small input current across one pair of terminals is used to produce a large current across other pairs of terminals. This process is used for amplification purposes.

• Tip41c is composed of three layers. One is a p-doped layer and the other two are n-doped layers that are made up of semiconductors (silicon material).
• The p-doped layer sits between the two n-doped layers. And the p-doped layer is the base terminal and the P sign shows positive voltage is applied at the base terminal to start the transistor action.
• This device is composed of two junctions. One is the base-emitter junction that is forward biased and the base-collector junction that is reverse biased in forward active mode.

• The collector current is 6A which is much higher than other bipolar transistors available in the market. This current defines the amount of load this device can support.
• And common-emitter current gain stretches from 15 to 75 which is the capacity of the transistor it can amplify the input current. It is a ratio between collector current and base current.
• The transistor frequency is 3MHz which demonstrates how the current gain of the transistor is influenced by the input frequency.
• This device controls the low input current and produces high output current, the reason this device is called a current-controlled device.
• This is a bipolar transistor which means two charge carriers are used for the conductivity process i.e. electrons and holes. The electrons are major carriers in NPN transistors and holes are major carriers in PNP transistors.

 

TIP41C Datasheet

Datasheet of any component documents the characteristic and performance of the device through which you understand what the product is about and its power ratings. Click the link below to download the datasheet of Tip41c.

TIP41C Pinout

The Tip41c comes with three terminals named: 1: Base 2: Collector 3: Emitter The following figure shows the pinout diagram of Tip41c.

• This device is manufactured in such a way, the collector side covers the entire emitter area, making electrons difficult to escape without being collected by the collector terminal.
• All these pins come with different doping concentrations. The collector side is lightly doped and the emitter side is more doped compared to both base and emitter pin.
• The collector pin is 10-times lightly doped compared to the base terminal. These pins are used for external connections with the electrical circuit.

TIP41C Working Principle

• No matter the bipolar transistor you pick, the base pin is responsible for the transistor action in every bipolar transistor. When a positive voltage is applied at the base pin, it gets biased, initiating the transistor action.
• And the current starts flowing from the collector to the emitter terminal in contrast to the PNP transistor where current flows from emitter to collector terminal.
• The base pin works like a control valve that controls the number of electrons in this NPN transistor and the number of holes in the PNP transistor.
• The bipolar transistors are not symmetrical. The lack of symmetry is caused by different doping concentrations of collector and emitter terminals.

• The two most common current gains are used to demonstrate the nature and current amplification capability… one is a common-emitter gain that 10 to 75 in this case which is a ratio between the collector and base current.

• It’s is also known as the amplification factor. This factor signals the capacity of transistors it can amplify the small input current. This factor is called beta.
• Another important factor is a common-base current gain which is a ratio between collector and emitter current. The value of this gain is always less than 1. Most likely stretches from 0.5 to 0.95.

TIP41C Power Ratings

The table below shows the absolute maximum ratings of Tip41c.

Absolute Maximum Ratings of Tip41C
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	100	V
2	Collector-Base Voltage	Vcb	100	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	6	A
5	Current Gain	hfe	15 to 75
6	Power Dissipation	Ptot	65	W
7	Storage Temperature	Tstg	-65 to 150	C

• You can see from the table, collector-base and collector-emitter voltages are 100V and the emitter-base voltage is 5V which means it requires 5V to start the transistor action.

• Total power dissipation is 65W and common-emitter current gain lies from 15 to 75 that defines the capacity of transistor it can amplify the input current. The transition frequency is 3MHz and the storage temperature stands from -65 to 150C.

TIP41C Alternatives

The following are the alternatives to Tip41c.

• MJE5180
• 2SD1895
• MJE5181
• BC911
• BD711

Cross-check the pinout of alternatives before you incorporate them into your project. It’s likely the pinout of the alternatives doesn’t exactly match with the Tip41c pinout. To remain on the safe side and to avoid any hassle later, double-check the pinout of the alternatives. The complementary PNP transistor to Tip41c is Tip42c.

TIP41C Applications

This NPN transistor is used in the following applications.

• Used for amplification and switching purposes.
• Used to drive load under 6A.
• Incorporated to drive DC motors.
• Used in Darlington pairs.
• Employed for signal amplification and audio amplification.

 

TIP41C Physical dimensions

The following diagram shows the physical dimensions of Tip41c. That’s all for today. I hope you find this article helpful. If you have any question, you can pop your comment in the section below, I’d love to help you the best way I can. You’re most welcome to share your feedback and suggestions, they help us curate content tailored to your exact needs and requirements. Thanks for reading the article.

B772 Transistor Pinout, Features, Datasheet & Applications

Hi Guys! Hope you’re well today. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to B772. B772 is a medium power bipolar junction transistor mainly used for switching and amplification purpose and belongs to the PNP transistor family. It comes in the TO-126 package and carries a collector current of 3A which means it can support load under 3A. The 60V is the collector-base voltage and 30V is the collector-emitter voltage while 5V is the emitter-base voltage which means it requires 5V to bias the transistor and start transistor action. In this post, I’ll be discussing pinout, datasheet, working principle, power ratings, physical dimensions, and applications of B772. Let’s get started.

Introduction to B772

• B772 is a bipolar junction transistor that falls under the category of PNP transistors.
• It contains three pins called the emitter, collector, and base terminals. During the amplification process in the circuit, the small input current present at the base terminal is used to produce large output current at the remaining terminals.
• This PNP transistor is made up of silicon material and comes in the TO-126 package.
• B772 comes with three layers where two are p-doped layers and one is n-doped. The n-doped layer stands between two p-doped layers.

• The two n-doped layers represent collector and emitter and one n-doped layer represents the base terminal and indicates the base terminal requires a negative voltage supply to start the transistor action.
• You know it already, both electrons and holes play a crucial role in the conductivity process inside the transistor, in the case of PNP transistor holes are majority carriers and electrons are minority carriers in the case of NPN transistors.

• In comparison, NPN transistors are preferred over PNP transistors because the mobility of electrons is better than the movement of holes in the PNP transistor. In rare cases, both PNP and its complementary NPN transistors are incorporated inside a single circuit.
• This device is produced using planer technology that generates rugged high-performance components.

 

B772 Datasheet

The datasheet of any component exhibits the main characteristics of the device. It will help you get a hold of the current and voltage required for the emitter, collector, and base terminals. Click below to download the datasheet of B772.

B772 Pinout

B772 carries three main terminals that are known as: 1: Emitter 2: Collector 3: Base The following figure shows the pinout diagram of B772.

• These terminals are used for the external connection with the electronic circuit. All these pins exhibit different doping concentrations and different functionality.
• The emitter side is more doped compared to other terminals. Moreover, the emitter terminal contains the entire current of the transistor i.e. Ie = Ic + Ib

B772 Working Principle

• B772 is a low saturation voltage and high current device where the base terminal is responsible for the overall transistor action.
• The emitter and collector side is reverse biased when there is current present at the base terminal and in that case, the device is considered turned OFF.

• And when there is no current at the base side, both collector and emitter are forward biased and the transistor is turned ON.

• Recall, this is a PNP transistor, here the n-doped layer represents the base side that is negative. The negative voltage supply is applied at the base side to start the transistor working process.

B772 Power Ratings

The following table shows the absolute maximum ratings of the device B772.

Absolute Maximum Ratings B772
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	30	V
2	Collector-Base Voltage	Vcb	60	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	3	A
5	Current Gain	hfe	30 to 300
6	Power Dissipation	Ptot	12.5	W
7	Storage Temperature	Tstg	-65 to 150	C

• You can see from the table, the 60V is the collector-base voltage and 30V is the voltage between collector and emitter. While the voltage between emitter and base is 5V.
• Total power dissipation is 12.5W which signals the amount of energy released during the working of this transistor.
• Junction temperature is 150C and storage temperature stands between 65 to 150C
• These are called stress ratings. When you incorporate this device into your project, make sure ratings don’t surpass the absolute maximum ratings.
• If they exceed the required ratings, it will damage the device and thus the entire project.

 

Difference between PNP and NPN transistors

• Both NPN and PNP are bipolar junction transistors and work similarly with a few exceptions. The current directions and voltage polarities are reversed.
• In the case of PNP transistor, the conductivity is carried out from the emitter to the collector side while in the case of NPN transistor the conductivity process is carried out from the collector to the emitter side.

• Moreover, the holes are majority carriers in the case of PNP transistors and minority carriers in the case of NPN transistors. While electrons are majority carriers in NPN transistors and minority carriers in the case of PNP transistors.

• And negative voltage is applied at the base pin in the PNP transistor and a positive voltage is applied at the base terminal in the case of NPN transistor.

B772 Alternatives

The following are the alternative to B772.

• BD186
• BD132
• KSB772
• BD188
• BD190
• MJE232
• KSH772
• MJE235

While working with the alternatives, cross-check the pinout of the alternatives, as it likely the pinout of the B772 might differ from the pinout of the alternatives. The complementary NPN transistor to D772 is D882.

B772 Applications

• Used for medium-power switching and amplification applications.
• Used in the motor control circuit.
• Incorporated in relay drivers.
• Incorporated in voltage regulator circuits.
• Used to drive loads under 3A.
• Employed in Astable and Bistable multivibrators.
• Employed in H-bridge circuits.

   

B772 Physical dimensions

The following figure exhibits the physical dimensions of the component that help you identify and evaluate the total space required for the circuit. That’s all for today. Hope you find this article useful. If you have any query, you can pop your question in the section below, I’d love to help you the best way I can. Feel free to share your valuable suggestions and feedback in the comment section, they help us to customize our content based on your exact needs and requirements. Thanks for reading the article.

Introduction to 2SD882

Hi Fellas! Hope you’re doing well today. I welcome you on board. In this post today, I’ll detail the Introduction to 2SD882. 2sd882 is an NPN bipolar junction transistor used for amplification and switching purposes. It is a semiconductor device composed of silicon material and comes in the TO-126 package. As this is a bipolar transistor, here conductivity is carried out by two charge carriers i.e. electrons and holes where electrons are major charge carriers and holes are minority carriers. During the amplification application, the small input current across one pair of terminals is used to produce a large output current across other pairs of terminals. In this post, I’ll walk you through the working principle, pinout, power ratings, alternatives, applications, datasheet, and physical dimensions of the 2sd882 transistor.

Introduction to 2SD882

• 2sd882 is a medium power transistor that belongs to the NPN transistor family. It contains two junctions… the base-emitter junction which is forward biased and the base-collector junction is reverse biased in forward active mode.
• This NPN transistor is composed of three layers where one is a p-doped layer that sits between two n-doped layers.
• 2sd882 carries three terminals called the emitter, collector, and base. The electrical circuit is connected with the transistor through these terminals.
• It is a high current and low saturation voltage device with common-emitter current gain ranging from 30 to 300. The current gain demonstrates the value of current this transistor can amplify. And this current gain varies depending on the voltage and current characteristics of the transistors.

• The collector-base voltage is 60V and the collector-emitter voltage is 30V. While the emitter-base voltage is 5V that indicates the amount of voltage it requires to bias the transistor and start the transistor action.

• In bipolar junction transistors, two charge carriers are used i.e. holes and electrons. And in this NPN transistor current flows from the collector to the emitter side with electrons as major charge carriers and holes as minority carriers.
• This NPN transistor is manufactured in such a way where the collector side surrounds the emitter side. In this construction, the electrons cannot escape the collector region emitted by the emitter terminal.

 

2SD882 Datasheet

The datasheet of any electronic device demonstrates the main characteristics of the component. This way you can get a hold of the current, voltage, and power ratings of the device. Click the link below to download the datasheet of 2sd882.

2SD882 Pinout

The 2sd882 comes with three pins known as: 1: Emitter 2: Collector 3: Base The following figure represents the pinout diagram of transistor 2sd882.

• All these terminals come with different doping concentrations. The collector pin is lightly doped and the emitter pin is highly doped compared to other terminals.
• The collector pin is 10-times less doped compared to the base pin. Moreover, the emitter side contains the entire current of the device.

2SD882 Working Principle

• When a positive voltage is applied at the base pin, it gets biased and the current flows from the collector to the emitter terminal.
• Recall, both electrons and holes play a key role in the conductivity process inside a transistor but holes are minority carriers and electrons are majority carriers.
• It is observed bipolar devices like this transistor are not symmetrical components. This means exchanging the emitter and collector terminals will prevent the transistor from working in forward active mode and put both terminals in the reverse active mode.
• This can affect and reduce the values of common-emitter current gain and common-base current gain.

• The lack of symmetry is caused by the different doping concentrations of both emitter and collector terminals.

• Common-emitter current gain is 30-300 in this transistor, which is denoted by beta and common-base current gain is always less than one which is denoted by alpha.
• And switching the emitter and collector terminals will put the alpha value somewhere around 0.5 and the beta value less than 300.
• Also, NPN transistors are preferred over PNP transistors since the mobility of electrons is far better and quicker than the movement of holes.

2SD882 Power Ratings

The following table demonstrates the absolute maximum ratings of 2sd882.

Absolute Maximum Ratings 2sd882
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	30	V
2	Collector-Base Voltage	Vcb	60	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	3	A
5	Current Gain	hfe	30 to 300
6	Power Dissipation	Ptot	12.5	W
7	Storage Temperature	Tstg	-65 to 150	C

• The collector-emitter and collector-base voltages are 30 & 60 respectively.
• And total power dissipation is 12.5W which projects the amount of power released during the working of this device.
• The junction temperature is 150C and the storage temperature stretches from -65 to 150C.
• While working with the component, make sure the ratings don’t exceed the absolute maximum ratings. Otherwise, they can damage the device, putting the entire project at risk.

• Plus, don’t apply these ratings more than the required time, else they can affect device reliability.

2SD882 Alternatives

The following are the alternatives to 2sd882.

• BD187
• MJE802
• BD185
• BD189
• BD349
• MJE182
• 2SC4342
• 2SD1693
• 2SD1712
• TIP122L
• BD131
• 2SD1018

Before installing this device into your electrical circuit, cross-check the pinout of alternatives with the original 2sd882. It is likely the pinout of the 2sd882 might differ from the pinout of the alternatives. Be on the safe side and do your due diligence beforehand. The complementary PNP transistor to 2sd882 is 2sb772

2SD882 Applications

2sd882 is used in the following applications.

• Used for switching and amplification purpose.
• Employed to support loads under 3A.
• Installed in the motor control circuit.
• Employed in the switched-mode power supply.
• Used in voltage regulator circuits.
• Used in H-bridge circuits.
• Incorporated in modern electronic circuits.
• Used in Bistable and Astable multivibrators circuit.

2SD882 Physical dimensions

The following figure shows the physical dimensions of the 2sd882 device. By scanning the physical dimensions of this component you can audit the space required for your circuit and install the device appropriately. This is it. If you have any query, you can pop your question in the comment section below, I’d love to help you according to the best of my expertise. You are most welcome to share your valuable feedback and suggestions in the section below and help us create quality content tailored to your exact requirements. Thanks for reading the article.

Introduction to D882

Hi there! Hope this finds you well. I welcome you on board. Thanks for clicking this read. In this post today, I’ll be discussing the Introduction to D882 transistor.

D882 is a general-purpose transistor mainly famous for its high performance. It falls under the category of NPN transistor and is an ideal pick for commercial, educational, and hobbyists’ electronic projects. It comes in TO-126 with collector current 3A, projecting it can drive loads under 3A. There are three pins incorporated on the transistor which are used for external connections. The collector-emitter and collector-base voltages are 30V and 40V respectively with emitter-base voltage 5V, indicating only 5V are required to bias the component.

Read this post all the way through as I’ll walk you through pinout, datasheet, alternatives, working principle, power ratings, applications, and physical dimensions of this tiny electronic component D882.

Let’s jump right in.

Introduction to D882

• D882 is a general-purpose transistor that belongs to the NPN transistor family. It comes with collector current 5A and is mainly used for switching and amplification purpose.
• The amplification factor is 60-400. This factor indicates the amount of current this device can amplify.
• This NPN transistor contains three pins called the emitter, collector, and base. The small current at the base terminal is amplified and produced across the remaining two terminals. This process is used for amplification purposes.

• D882 consists of three layers where two are n-doped layers and one is a p-doped layer. This p-doped layer represents the base terminal which means a positive voltage supply is applied at the base terminal in contrast to the PNP transistor where the base terminal is negative indicating negative voltage supply is applied at the base terminal.
• As this is an NPN transistor, here current flows from collector to emitter in opposite to PNP transistors where current flows from emitter to collector terminal.
• This device controls the input current, the reason it’s known as a current-controlled device and is different than FETs (field effect transistor) that are voltage-controlled devices.
• Though both holes and electrons play a vital role in the conductivity of the transistor, here in this NPN transistor electrons are majority carriers and holes are minority carriers, indicating major part of the conductivity inside the transistor is done by the movement of electrons which is far better than the movement of holes.
• This NPN transistor is preferred over PNP transistors for the amplification purpose because electrons prove handy for conductivity compared to holes as they are fast carriers.

D882 Datasheet

The datasheet of any component gives you the characteristics of the device through which you can understand the main features of the component before employing it in your project. Click the link below and download the datasheet of D882.

D882 Pinout

D882 comes with three pins named as:

1. Emitter
2. Collector
3. Base

The following picture shows the pinout diagram of D882.

These pins are also called terminals. The small input current at the base terminal is used to produce a large current at the emitter and collector terminals.

D882 Working Principle

• The overall transistor action starts from the base pin. The base terminal behaves like a control valve that controls the number of electrons emitted from the emitter terminal which are then collected by the collector terminal that is coupled with a resistor to control the electrical current.
• Recall, in the NPN transistor the positive voltage supply is applied at the base terminal.
• The P-doped layer in the NPN transistor represents the base terminal and the other two n-doped layers represent emitter and collector terminals which are negative.

• Also, this base terminal controls the number of holes in the PNP transistors, as holes are the majority carriers in PNP transistors.
• When 5V is applied at the base terminal it gets biased and starts the transistor action. The small input current is used to create a large output current at the other two terminals.

D882 Power Ratings

The following table represents the absolute maximum ratings of the D882 transistor:

Absolute Maximum Ratings D882
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	30	V
2	Collector-Base Voltage	Vcb	40	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	3	A
5	Current Gain	hfe	60 to 400
6	Power Dissipation	Ptot	10	W
7	Storage Temperature	Tstg	-55 to 150	C

• This device exhibits a collector current of 3A which is ideal for driving LED, bulbs, motors, and relays. The maximum power dissipation is 10W which makes it a valuable pick for the output stages of audio amplifiers.
• It is important to note that these are the stress ratings which if exceeding the absolute maximum ratings, can badly affect the device and thus the entire project. Keep ratings during the working of this component below absolute maximum ratings.
• One more thing… don’t apply these ratings for maximum time. If you apply these ratings more than the required time, can affect device reliability.

D882 Alternatives

The following are the alternatives to D882.

• MJE802
• BD349
• BD185
• BD189
• MJE182
• BD187
• TIP122L
• 2SC4342
• 2SD1712
• BD131
• 2SD1693
• 2SD1018

The PNP complementary to 2SD882 is 2SB772. It’s important to remember, before installing alternatives in your project, double-check the pinout of the alternatives which might differ from the pinout of the D882. This will save you from the hassle that might happen later.

D882 Applications

The D882 is mainly used in the following applications.

• Used for amplification and switching purposes.
• Used to drive loads under 3A.
• Installed in H-bridge circuits.
• Incorporated in voltage regulators and power supply circuits.
• Used to drive motors and battery charger circuits.

D882 Physical dimensions

The following figure represents the physical dimensions of the D882. These dimensions help you evaluate the total space required for the entire electrical project.

That’s all for today. I hope you find this article helpful. You’re most welcome to share your feedback and suggestions in the comment section, they help us produce quality content customized to your exact needs and requirements. If you have any questions, you can pop your comment in the section below, I’d love to help you the best way I can. Thanks for reading the article.

Introduction to BD136

Hello Guys! Hope you’re well today. I welcome you on board. In this post today, I’ll walk you through the Introduction to BD136. BD136 is a medium power general-purpose transistor mainly used for switching and audio amplification purposes. It belongs to the PNP transistor family and comes with collector current 1.5A, indicating it can drive loads under 1.5A. The amplification factor ranges from 40 to 250, which means it can amplify the input signal up to 250 times. Both collector-emitter and collector-base voltages are 45V while the emitter-base voltage is 5V, indicating only 5V is required to bias this transistor. I suggest you read this entire post, as I’ll be detailing complete introduction to BD140 covering pinout, working principle, power ratings, applications, and physical dimensions. Let’s get started.

Introduction to BD136

• BD136 is a PNP general purpose transistor mainly used for switching and amplification purpose. It comes with three terminals named as emitter, collector and base.
• The small input current at the base pin is used to produce large output current at the other two terminals. This process is used for amplification purposes.
• It carries amplification factor or current gain 40 to 250, projecting the capacity of the component it can amplify the current.
• BD136 is composed of three layers where one is an n-doped layer and the other two are p-doped layers. The n-doped layer sits between the two p-doped layers.
• The n-layer represents the base pin while the other two layers represent emitter and collector respectively.

• Though both electrons and holes play a critical role in the conductivity, as this is a PNP transistor, here majority carriers are holes in contrast with NPN transistor where majority carriers are electrons.
• In both cases, the base pin is the main terminal responsible for the entire transistor action. The base pin behaves like a valve that controls the number of holes in PNP transistors and electrons in NPN transistors.

• It is important to note that NPN transistors are preferred over PNP transistors for amplification purposes because the electrons’ movement is better and quicker than the mobility of holes in PNP transistors.

BD136 Datasheet

• Before you embed this component in your project, it is wise to have a look at the datasheet of the component that helps you better understand the main characteristics of the transistor.
• Click the like below to download the datasheet of the BD136 transistor.

BD136 Pinout

BD136 comes with three main terminals known as: 1: Emitter 2: Collector 3: Base The following figure represents the pinout of the BD136 transistor.

• All these terminal can be connected with the electrical circuit. Also, these terminals are different in terms of doping concentrations and working ability.
• The base and collector terminals are less doped compared to the emitter terminal. Plus, emitter terminals holds the current of the entire transistor.

BD136 Working Principle

• The working principle of this PNP transistor is simple and straightforward and works like an NPN transistor. Also, in NPN transistor the base pin is positive while it’s negative in PNP transistor.
• The transistor is turned ON and both emitter and collector terminals are forward biased when there is no current at the base side.
• And when there is current at the base terminal, the transistor is turned OFF, projecting both collector and emitter sides are reverse biased.

• Recall NPN transistors are preferred over PNP transistors for amplification purposes because the electrons’ movement is better and quicker than the mobility of holes in the PNP transistor.

Difference between PNP and NPN transistors

• In both transistors, the base pin is the main terminal used to bias the transistor. The base terminal acts like a valve that controls the number of electrons in the NPN transistor and the number of holes in the PNP transistor.

• The main difference stands between the voltages polarities and the current direction. In PNP transistor current flows from emitter to collector terminals while in NPN transistor current flows from collector to emitter terminal.

• Keep this thing in mind, both NPN and PNP transistors are interchangeable only if a bipolar junction transistor is composed of two back-to-back diodes with the base terminal being the common terminal.

 

BD136 Power Ratings

The following table represents the absolute maximum ratings of BD136.

Absolute Maximum Ratings BD136
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	45	V
2	Collector-Base Voltage	Vcb	45	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	1.5	A
5	Current Gain	hfe	40 to 250
6	Power Dissipation	Ptot	12	W
7	Storage Temperature	Tstg	-55 to 150	C

• The collector-base and collector-emitter voltages are 45V respectively. While emitter-base voltage is 5V indicating only 5V is used to bias the transistor.
• The amplification factor ranges from 40 to 250, demonstrating the transistor capacity to amplify the input signal. The collector current is 1.5A, which means it is capable to support loads under 1.5A.
• The power dissipation is 12 W and storage temperature is -55 to 150C.

• It is important to note that these are defined as the stress ratings. While working with your project, make sure the ratings don’t surpass the absolute maximum ratings, else they can damage the component and thus the entire project.
• Plus, if you apply these ratings for more than the desired time, they can affect device reliability.

BD136 Alternatives

The following are the alternatives to BD136.

• TIP127
• TIP42
• BC157
• 2N3906
• BC556
• BD140
• 2SA1943
• S8550

The BD135 is NPN equivalent to the BD136 transistor.

• While incorporating alternatives into your electrical project, check the pinout of the alternatives. As it’s quite likely the pinout of the alternatives might differ from the pinout of BD136.

BD136 Applications

BD136 is used in the following applications.

• Used for switching and amplification purpose.
• Used to drive loads under 1.5A.
• Used for constructing Astable bistable multivibrators.
• Used in current mirror circuits.
• Used in comparator and oscillator circuits.
• Employed for impedance buffering.
• Used to drive loads under 1.5A.
• Incorporated in H- Bridge circuits.

 

BD136 Physical dimensions

The following figure shows the physical dimensions of the component BD136. That was all about Introduction to BD136. If you have any question, you can approach me in the section below, I’d love to help you the best way I can. Feel free to keep us updated with your feedback and valuable suggestions, they help us create quality content. Thank you for reading this article.

Introduction to BD135

Hi Friends! Hope you’re well today. Thank you for clicking this read. In this post today, I’ll walk you through the Introduction to BD135. BD135 is a general-purpose medium-power transistor that falls under the category of NPN transistors. It is mainly used for switching and audio amplification purposes. It comes with a collector current 1.5A, indicating it can drive loads under 1.5A. Total power dissipation is 12.5W with storage temperature ranging from -55 to 150C. Bear with me for a couple of minutes as in this post I’ll be discussing the complete introduction to BD135 covering pinout, datasheet, working principle, power ratings, applications, and physical dimensions of transistor BD135. Let’s jump right in.

Introduction to BD135

• BD135 is an NPN transistor made-up of silicon material. It is a medium power transistor mainly used for audio amplification and switching purpose.
• This NPN transistor comes with three terminals called emitter, base, and collector. Where small current at the base side is used to produce large current at the other two terminals. This process is used for amplification purposes.
• BD135 carries three layers where one is a p-doped layer and the other two are n-doped layers. The p-doped layer stands between the two n-doped layers.
• In this transistor, the base terminal is positive and represents the p-doped layer while the other two terminals are negative.

• It is important to notice that both electrons and holes play a vital role in conductivity. As this is an NPN transistor, here electrons are majority carriers in opposed to PNP transistors where holes are majority carriers.

• In both cases, however, the base terminal plays the key role to control the overall transistor action.
• In NPN transistor, the base pin controls the number of electrons emitted from the emitter side, and in PNP transistor this base terminal controls the number of holes emitted by emitter which are then collector by the collector side.

BD135 Datasheet

Before employing this component into your electrical projects, it is wise to have a look at its datasheet that will help you get a hold of the main characteristics this element holds. Click below to download the datasheet of the BD135 transistor.

BD135 Pinout

BD135 carries three terminals called: 1: Emitter 2: Collector 3: Base The following figure shows the pinout of the BD135. All these terminals are different in terms of functionality and doping concentration. Emitter pin is more doped compared to the other two terminals. These pins are used for external connection with the electronic circuit.

BD135 Pin Configuration

BD135 transistor is available in the following three configurations: 1: Common emitter configuration 2: Common collector configuration 3: Common base configuration

• Common emitter configuration is used for amplification purposes as it comes with the suitable voltage and current ratings required for amplification.
• The amplification factor or current gain is an important factor of the transistor that demonstrates the capacity of any transistor it can amplify the current. It is a ratio between collector current and base current and is denoted by ß. In this case, the amplification factor ranges from 40 to 250. As this is a ratio between the same element i.e. current it carries no unit.
• The current gain is another important factor that is mainly used to demonstrate the nature of the transistor. It is known as alpha and is denoted by a. It is a ratio between collector current and emitter current. The alpha value is always less than 1, commonly lies from 0.5 to 1.

BD135 Working Principle

• Recall, the base pin is responsible for the overall transistor action. This pin behaves like an electron valve that controls the number of electrons emitted from the emitter terminal.

• The base terminal behaves similarly in the PNP transistor but here it controls the number of holes.
• The small current at the base terminal is amplified and produced across the other terminals during the amplification process.

• And when BD135 behaves like a switch, it changes the small current present at one side of the transistor into a larger current across the remaining terminals.
• As BD135 is an NPN transistor, here the base pin is positive with respect to the emitter terminal and the collector voltage is more positive than the emitter voltage.
• Also, the collector side is connected with the resistor to limit and control the flow of current.

 

BD135 Power Ratings

The following table shows the absolute maximum ratings of BD135.

Absolute Maximum Ratings BD135
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	45	V
2	Collector-Base Voltage	Vcb	45	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	1.5	A
5	Current Gain	hfe	40 to 250
6	Power Dissipation	Ptot	12.5	W
7	Storage Temperature	Tstg	-55 to 150	C

• These are the stress ratings. Make sure ratings don’t exceed the absolute maximum ratings, else they can damage the component and thus the entire project.

• Also, if these ratings are applied for more than the required time, they can severely affect device reliability.

BD135 Alternatives

The following are the alternatives to BD135.

• BD131
• BD135G
• BD167
• BD137
• BD139G
• BD169
• BD137G
• BD139
• BD165
• It is important to note that… before employing these components in your electrical circuit, check the pinout of the alternatives, as it is likely the pinout of the alternatives differ from the pinout of the BD135. Early due diligence can help you avoid hassle later.
• BD136 is a complementary PNP transistor to BD135.

BD135 Applications

BD135 is used in the following applications.

• Used for amplification and switching purposes.
• Used in Astable and Bistable multivibrators.
• Used in sensor circuits.
• Used to control motor.
• Employed in H-bridge circuits
• Used in an audio preamplifier and amplifier stages.
• Used to drive loads under 1.5A.
• Employed in battery chargers.

BD135 Physical dimensions

The following figure shows the physical dimensions of the BD135 transistor. Looking into these dimension you can evaluate the space required for your electronic project. This is it. I hope you find this article helpful. If you need my help, I’d be happy to contribute in any way I can. You’re most welcome to share your valuable suggestions and feedback in the section below, they help us create quality content. Thanks for reading the article.

Introduction to BD137

Hi Folks! Hope this finds you well. Thank you for stopping by. In this post today, I'll be discussing the Introduction to BD137. BD137 is an NPN medium power transistor mainly employed in switching and audio amplification applications. It is composed of silicon material and comes in the TO-126 package. The collector-base and collector-emitter voltages are 45V and the emitter-base voltage is 5V which details that only 5V is required to bias this transistor and start transistor action. The collector current is 1.5A which documents that it can support loads under 1.5A. Power dissipation is 12.5W and storage temperature ranges from -55 to 150C. Read this entire post, as I'll walk you through the complete Introduction to BD137 detailing pinout, datasheet, working principle, power ratings, applications, and physical dimensions. Let's jump right in.

Introduction to BD137

• BD137 is a medium power transistor that falls under the category of NPN transistors.
• It contains three terminals known as emitter, collector, and base. The small input current at the base pin is utilized to create a large current at the other two terminals.
• BD137 is composed of three layers where one p-doped layer sits between the two n-doped layers. The single p-doped layer represents the base terminal which is positive and the other two terminals represent emitter and collector that are negative.
• As this is an NPN transistor, here current flows from the collector pin to emitter pin while the base terminal controls the number of electrons emitted from the emitter pin which are then collected by the collector pin.

• Though both holes and electrons play a vital role in conductivity, here in this NPN transistor, holes are minority carriers while on the other hand electrons are majority carriers.
• This is opposite in the case of PNP transistors where electrons are minority carriers and holes are majority carriers.

• It is important to note that the NPN transistors are widely used for amplification purposes and are preferred over PNP transistors because the movement of electrons is better than the movement of holes.

BD137 datasheet

While incorporating this NPN transistor into your electrical project, it is better to scan through the datasheet of this component that will help you get a better understanding of the characteristics of the component. To download the datasheet of BD137, click the link below.

BD137 Pinout

BD137 contains three terminals named 1: Emitter 2: Collector 3: Base The following figure shows the pinout of the BD137 transistor.

• These pins are used for the connection with the external circuit. All these terminals carry different doping concentrations and different functionality.
• The collector and base pins are less doped as compared to the emitter pin. Plus, the emitter terminal holds the entire current of the transistor.

Pin Configurations

BD137 is used with three main configurations. 1: Common-base configuration 2: Common-collector configuration 3: Common-emitter configuration

• The Common-emitter configuration is employed for the amplification purposes because it comes with the exact current and voltage required for the amplification.
• The amplification factor is an important factor of this transistor that defines the capability of the transistor it can amplify the input signal that is then produced as output across the other terminals. It is called beta and is denoted by ß. It is a ratio between the collector current and base current.
• The current gain is another important factor that defines the nature of the transistor. It is denoted by a and is known as alpha. It is a ratio between collector current and emitter current. The alpha value is always less than 1, mostly ranges from 0.5 to 1.

BD137 Working Principle

• No matter the transistor is… whether it’s NPN or PNP transistor, the base pin is used to trigger the overall transistor action.
• This base pin controls the number of electrons in the case of NPN transistor while it controls the number of holes in the case of PNP transistor. This base terminal acts as a control valve.

• In this BD137 NPN transistor, here the base terminal is positive with respect to the emitter side and the emitter voltage is less positive than the collector voltage.

• The small input current at the base side is amplified and created across the remaining two terminals during the amplification process.
• And BD137 also acts like a switch, where it changes the small current available at one side of the transistor into much larger current across the other two terminals.
• Plus, the collector side is coupled with the resistor to control and limit the flow of current.

BD137 Power Ratings

The following table shows the absolute maximum ratings of the component BD137.

Absolute Maximum Ratings BD137
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	45	V
2	Collector-Base Voltage	Vcb	45	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	1.5	A
5	Current Gain	hfe	40 to 250
6	Power Dissipation	Ptot	12.5	W
7	Storage Temperature	Tstg	-55 to 150	C

• The emitter-base voltage is 5V which means it needs only 5V to bias the transistor while collector-base and collector-emitter voltages are 45V.
• Power dissipation is 12.5W which projects that it releases 12.5W energy during the working of this transistor. The DC current gain ranges from 40 to 250 which demonstrates the amount of current it can amplify.
• These are main called stress ratings. Make sure while working with your electrical project these ratings don't surpass the absolute maximum rating or they can badly damage the component.

• Moreover, if these ratings are applied for a maximum period, they can affect device reliability.

BD137 Alternatives

• The BD135 & BD139 are the alternatives to BD137.
• While working with the alternatives, double-check the pinout of the alternatives before using them in your project, as it's quite likely the pinout of the BD137 may differ from the pinout of the alternatives.
• The complementary PNP transistor to BD137 is BD138.

Applications

BD137 is used in the following applications.

• Used to design audio amplifiers and drivers using complementary circuits.
• Used to control motor.
• Employed in an audio preamplifier and amplifier stages.
• Used to support loads under 1.5A.
• Employed in H-bridge circuits.
• Incorporated in battery chargers.

BD137 physical dimensions

The following figure shows the physical dimensions of the BD137 transistor. This will help you audit the space required for the entire project. That's all for now. Hope you find this read helpful. If you're unsure or have any query, you can pop your comment in the section below, I'll help you the best way I can. Keep sharing your feedback and suggestions around the posts we share, they help us create quality content. Thank you for reading this article.

Introduction to BD138

Hi Guys! Hope you’re well today. I welcome you on board. In this post today, I’ll detail the complete Introduction to BD138. BD138 is a PNP transistor that is incorporated in audio amplification and switching applications. It is composed of silicon material and comes in the TO-126 package. It contains three terminals, where small input current across one terminal is used to produce large output current across the remaining two terminals. The collector-base and collector-emitter voltages are 60V with emitter-base voltage 5V that illustrates the amount of voltage it requires to bias the transistor. In this post I’ll walk you through the Introduction to BD138 detailing pinout, working, physical dimensions, applications, power ratings, and alternatives of BD138 transistor. Let’s get started.

Introduction to BD138

• BD138 is a medium-power transistor that is mainly used for amplification and switching applications.
• It contains three terminals known as emitter, collector, and base. During the amplification process, the small current at the base side is used to produce large output current at the remaining terminals.
• BD138 is composed of three layers. The two layers are p-doped that contains one n-doped layer.
• This n-doped layer represents the base pin that is negative and the other two p-doped layers represent emitter and collector respectively that are positive.

• As this is a PNP transistor, here holes are majority carriers.
• Even though both electrons and holes play a key role in the conductivity, here in PNP transistor holes are majority carriers indicating major conductivity process is done by holes while electrons are minority carriers.

• And it is opposite in the NPN transistor where holes are minority carriers and a major part of conductivity is done through the number of free electrons inside a transistor.
• It is important to note that, for amplification purposes, NPN transistors are commonly used instead of PNP transistors, because the movement of electrons is more efficient and quicker than the movement of holes during the conductivity process.

BD138 Datasheet

• Before you incorporate this component into your electronic project, it is wise to have a look at the datasheet of the component that will help you scan through the main characteristics of the transistor.
• Click below and download the datasheet of transistor BD138.

BD138 Pinout

The BD138 carries three main terminals named as: 1: Emitter 2: Collector 3: Base The following figure shows the pinout of the BD138 transistor.

• These three pins come with different functionality and different doping concentration. The emitter terminal contains the entire current of the transistor and comes with more doping concentration in contrast to both collector and base pins.
• These terminals are connected with the external circuits during the construction of any electrical project.
• It is important to note that, no matter the transistor, whether it’s PNP or NPN transistor, in both cases the base pin plays a key role in the overall transistor action.
• It controls the number of holes in the case of PNP transistor and it controls the number of electrons in the NPN transistor.
• Base pin is nothing but a control value that controls the majority carriers during the conductivity process inside the transistor.

BD138 Working Principle

Recall, the base terminal is negative in PNP transistor while it’s positive in NPN transistor. And the base terminal is the part of the transistor that triggers the overall electron action.

• Both collector and emitter pins are forward biased when the base terminal contains no current and in this situation, the component is turned ON.

• And it is turned OFF when base pin carries current and in that case, both emitter and collector pins are reverse biased.

 

BD138 Power Ratings

The following table represents the absolute maximum ratings of the transistor BD138.

Absolute Maximum Ratings BD138
No.	Rating	Symbol	Value	Unit
1	Collector-Emitter Voltage	Vce	60	V
2	Collector-Base Voltage	Vcb	60	V
3	Emitter-Base Voltage	Veb	5	V
4	Collector Current	Ic	1.5	A
5	Current Gain	hfe	40 to 250
6	Power Dissipation	Ptot	12.5	W
7	Storage Temperature	Tstg	-55 to 150	C

• You can witness, both collector-emitter and collector-base voltages are 60V and the emitter-base voltage is 5V which indicates the voltage required to bias the component and start the transistor action.
• The collector current is 1.5A which signals the amount of load this transistor can support. And the power dissipation is 12.5W that illustrates the energy released during the working of this transistor.
• While working with the component, keep this in mind, the ratings don’t exceed the power ratings, otherwise, it can put you in deep trouble by damaging the component or entire project.
• Also, don’t apply these ratings for more than the required time, else they can affect the device reliability.

Difference between NPN and PNP transistors

• Both NPN and PNP transistors work in a similar fashion with a few exceptions.
• In NPN transistor the current flows from collector pin to emitter pin while this is opposite in case of PNP transistor i.e. current flows from emitter to collector pin. In both cases, however, the base terminal is used to bias the entire transistor.

• It is important to notice that, both PNP and NPN components are interchangeable given that the bipolar junction transistor is made up of two back-to-back diodes. And these diodes share a common base terminal.

 

BD138 Alternatives

• The alternatives to BD138 are BD136 and BD140.
• Double-check the pinout of the alternative before employing them into your project. It’s quite likely the pinout of the alternatives may differ from the alternatives of the BD138.
• The complementary NPN transistor to BD138 is BD137.

BD138 Applications

• Used for medium-power amplification and switching applications.
• Used to drive loads under 1.5A.
• Employed in H-bridge circuits.
• Used in Astable and Bistable multivibrators.
• Incorporated in the motor control circuit.

BD138 Physical dimensions

The following figure shows the physical dimensions of the BD138 transistor. These dimensions help you evaluate the space required for your electrical project. That’s all for today. Hope you find this read valuable. If you have any query, you can pop your question in the section below, I’ll help the best way I can. You are most welcome to share your feedback and suggestions, they help us to create quality content as per your needs and requirements. Thanks for reading this post.

Introduction to TIP2955

Hello friends, I hope you all are doing great. In today's tutorial, we are gonna have a look at detailed Introduction to TIP2955. It is a harmonizing silicon power transistor which is designed to use in universal tenacity power amplifications and swapping submissions. It is a PNP transistor and has a casing of TO-247. It is the complementary device for the  TIP3055 NPN transistors. It is used in such applications which need high power input supply. It is a common expedient used in numerous manufacturing schemes where acoustic intensification is obligatory. Its constructions are good-looking much the alike rejecting for the extreme power tolerance that is somewhat smaller. In today’s post, we will have a look at its protection, wreck, fame, applications, etc. I will also share some links where I have allied it with other microcontrollers. You can also get more material about it in comments, I will guide you more about it. So, let’s get started with a basic Introduction to TIP2955. 

Introduction to TIP2955

• It is a harmonizing silicon power transistor which is designed to use in universal tenacity power amplifications and swapping submissions. It is a PNP transistor and has a casing of TO-247.
• This transistor exits into the class of power transistors. Power transistors can endure high power indulgence deprived of any destruction.

• Due to the restrictions of the transistor suite type, it is permanently compulsory that a power transistor is equestrian on an appropriate heat sink in other to bind the device’s maximum rated power deprived of harm.
• This transistor finds extensive use in Power Swapping schemes such as inverters, and output periods of acoustic amplifiers where they are linked in push-pull with a corresponding power transistor type.
• When used in an acoustic amplifier scheme, it is sensible to enterprise the power transistor from a pre-amplifier phase as most power transistors have little current gain.

  Pinout of TIP2955

• These are the main pinout of TIP2955 which are well-defined beneath.

• Pin#	Type	Parameters
  Pin#1	Emitter	The emitter is for an outside enterprise of current.
  Pin#2	Base	The base manages the biasing of the transistor. It caprices the condition of the transistor.
  Pin#3	Collector	The collector is for the current inward movement. It is connected to the load.

  Lest see a diagram of the pinout.

Features of TIP2955

• These are the main features of TIP2955.
  • It is a PNP transistor.
  • Its extreme power Indulgence (dissipation) (Pc) at the collector is 90 Watt.
  • Its extreme voltage at collector and base (Vcb) terminal is 100 volts.
  • Its extreme voltage at collector and emitter terminals (VCE) is 70 volts.
  • It has extreme voltage across emitter and base terminal is 7 volts.
  • Its extreme current at collector point is 15 ampere.
  • Its maximum working intersection temperature is 150 centigrade.
  • Its Changeover Frequency (ft) is 3 MHz.
  • Its onward current transmission ratio (hFE) is 20.

Maximum Ratings of TIP2955

Symbols	Ratings	Parameters
VCEO	60V	These are the voltage across collector and emitter.
VCER	70 V	These are the voltage across collector and emitter.
VCBO	100 V	These are the voltage across collector and base.
VEBO	7V	It is the voltage across emitter and base.
IC	15A	It is the current at the collector.
IB	7A	It is the value of current at the base terminals.
PD	90 W 0.72 W/°C	Total Power Dissipation at TC = 25°C. Derate Above 25°C.
TJ, TSTG	-65 to +150 C	It is working and Storing Connection Temperature Range

Electrical Characteristics

Symbols	Ratings	Parameters
VCEO	60V	These are C-E Supporting Voltage. (IC = 30 mA, IB = 0)
ICER	1mA	It is the collector Cut-off Current. (VCE = 70 V, RBE = 100 ?)
ICEO	0.7mA	It is the collector Cut-off Current. (VCE = 30 V, IB = 0)
ICEV	5mA	It is the collector Cut off Current (VCE = 100 V, VBE (off) = 1.5 V)
IEBO	5mA	It is the emitter Cut off Current. (VEB =7 V, IC = 0)
hFE	20 5	It is the DC current Gain. (IC = 4 A, VCE = 4 V) (IC = 10 A, VCE = 4 V)
VCE	1.1V 3V	These are the Collector-Emitter Saturation Voltage. (IC = 4 A, IB = 0.4 A) (IC = 10 A, IB = 3.3 A)
VBE	1.8V	Base-Emitter on Voltage (IC = 4 A, VCE = 4 V)

TIP2955 as Voltage Regulator

• Now we discuss how it works as the voltage regulator. For this, we discuss the circuit diagram.
• Here is the circuit illustration of a potent 12V regulator that can carry up to 15 A of current. The communal voltage regulator IC 7812 (IC1) is rummage-sale to keep the voltage at stable 12V and three TIP 2599 power transistors in parallel are underwired in series permit style to increase the output current.
• The 7812 can deliver only up to 1A and respite of the current is provided by the series permit transistors. The 15A bridge B1 does the work of rectifying the stepped downcast AC input.
• The C1, C2, and C3 capacitors in this circuit are working as a filter. The 1A fuse F1 defends the IC1 from an excess of current in circumstance if the pass transistors flop. The 15A fuse F2 shields the complete circuit (particularly the pass transistors) from overcurrent.
• When you are working on such circuits which are using current transformers high current consuming bridge circuits this circuitry is expensive and you can try this only if there is a solemn essential.

Applications of TIP2955

• These are particular applications of TIP2955.
  • It is collective tenacity transistor it can be used in different manufacturing projects.
  •  It is used as an Audible Amplifier.

So it was all about TIP2955 if you have any question please ask in comments. Take care until the next tutorial.